| 発行年月 | タイトル | 第一著者 | 共著者 | 会議名 | 開催場所 | 備考 | |
| 01-01 | 2001年3月 | Gas Phase Chemical Reaction in Tantalum Nitride Low-pressure Chemical Vapor Deposition | Y. Ohshita | A. Ogura, A. Hoshino, S. Hiiro, A. Tawara, and H. Machida | Meeting of The Electrochemical Society | Washington D.C | |
| 01-02 | 2001年4月 | Characterization of Optical Lifetime in Silicom-on-insulator wafers by Photoluminescence Decay Method | S. Ibuka | M. Tajima, and A. Ogura | Spring Meeting of The Material research Society | San Francisco | |
| 01-03 | 2001年4月 | HfO2 Film Formation by Metalorganic Chemical Vapor Deposition | A. Hoshino | T. Suzuki, H. Machida, A. Ogura, and Y. Ohshita | Spring Meeting of The Material research Society | San Francisco | |
| 01-04 | 2001年7月 | Formation of Epitaxially Ordered SiO2 in Oxygen-implanted Silicon during Thermal Annealin | T. Shimura | T. Hosoi, K. Fukuda, M. Umeno, and A. Ogura | International Conference on Crystal Growth | Kyoto | |
| 01-05 | 2001年7月 | MOCVD precursors for Ta and Hf compound films | H. Machida | A. Hoshino, T. Suzuki, A. Ogura, and Y. Ohshita | International Conference on Crystal Growth | Kyota | |
| 01-06 | 2001年9月 | Oxygen-Related Defects and Their Annealing Behavior in Low-Dose Seperation-by-Implanted Oxygen (SIMOX) Wafers Studied by Slow Positron Beams | Z.Q. Chen | A. Uedono, A. Ogura, R. Suzuki, T. Ohdaira, and T. Mikado | International Workshop on Slow Positron Beam Techniques for Solids and Surfaces | Dresden | |
| 01-07 | 2001年9月 | Novel SOI fabrication process by light ion implantation and annealing in oxygen including atmosphere | A. Ogura | International Conference on Solid State Devices and Materials | Tokyo | ||
| 01-08 | 2001年10月 | BOX Layer Formation by Oxygen Precipitation at Implantation Damage of Light Ions | A. Ogura | IEEE International SOI Conference | Durango,Co | ||
| 01-09 | 2001年10月 | “HfO2 and Hf1-xSixO2 deposition by MOCVD using TDEAH | M. Ishikawa | H. Machida, A. Ogura, and Y. Ohshita | Advanced Metallization Conference 2001 | Tokyo | |
| 02-01 | 2002年8月 | Organometallic Hf and Si precursors for Hf1-xSixO2 thin film formation ?synthesis | H. Machida | T. Kada, M. Ishikawa, A. Ogura and Y. Ohshita | Atomic Layer Deposition (ALD2002) Conference | Seoul | |
| 02-02 | 2002年8月 | Organometallic Hf and Si precursors for Hf1-xSixO2 thin film formation ?characterization | M. Ishikawa | T. Kada, H. Machida, A. Ogura and Y. Ohshita | Atomic Layer Deposition (ALD2002) Conference | Seoul | |
| 02-03 | 2002年9月 | Reduction of Pattern Edge Defects in Partial SOI by LII (Light Ion Implantation) Technique | A. Ogura | International Conference on Solid State Devices and Materials | Nagoya | ||
| 02-04 | 2002年9月 | Evaluation of SOI substrates by positron annihilation | A. Ogura | A. Uedono | International Workshop on Positron Studies of Semiconductor Defects | Sendai | invited |
| 02-05 | 2002年10月 | Organometallic Hf and Si precursors for Hf1-xSixO2 thin film formation | M. Ishikawa | T. Kada, H. Machida, A. Ogura, and Y. Ohshita | Advanced Metallization Conference 2002 | Tokyo | |
| 02-06 | 2002年11月 | Characterization of silicon-on-insulator wafers by monoenergetic positron beams | Akira Uedono | Hidekazu Yamamoto, Akihiko Nakano, Atsushi Ogura, Toshiyuki Ohdaira, Ryoichi Suzuki, and Tomohisa Mikado | IEEE International SOI Conference | Williamsburg, VA | |
| 02-07 | 2002年11月 | Partial SOI/SON Formation by He+ Implantation and Annealing | A. Ogura | IEEE International SOI Conference | Williamsburg, VA | ||
| 02-08 | 2002年12月 | SOI Formation by Light Ion Implantation and Annealing in Oxygen Including Atmosphere | A. Ogura | International Workshop on Junction Technology | Tokyo | invited | |
| 03-01 | 2003年4月 | Evaluation of Commercial Ultra-thin SOI Substrates using Confocal Laser Inspection System | A. Ogura | O Okabayashi | International Symposium on Silicon-on-insulator Technology and Devices | Paris | |
| 03-02 | 2003年9月 | Precursors for chemical vapor deposition of NiSi | M. Ishikawa | T. Kada, H. Machida, Y. Ohshita and A. Ogura | International Conference on Solid State Devices and Materials | Tokyo | |
| 03-03 | 2003年9月 | Body Contact structure using Eleveted Field Insulator for Ultra-Thin Film SOI-MOSFET | S. Yamagami | R. Koh, H. Wakabayashi, J.-W. Lee, Y. Saito, A. Ogura, M. Narihiko, K. Arai, H. Takemura, Y. Ochiai, K. Takeuchi and T. Mogami, | International Ｃonference on Solid State Devices and Materials | Tokyo | |
| 03-04 | 2003年9月 | Comparison of SOI Wafer Mappings between Photoluminescence Intensity and Photoconductive Decay Lifetime | Michio Tajima | Zhiqiang Li, Shingo Sumie, Hidehisa Hashizume, Atsushi Ogura | International Conference on Defects: Recognition, Imaging and Physics of Semiconductors | BATZ-sur-MER Furance | |
| 03-05 | 2003年9月 | Nonuniformity of Commercial SOI Wafers Manifested by Photoluminescence and Lifetime Mapping | Z.Q. Li | M. Tajima, S. Sumie, H. Hashizume and A. Ogura | IEEE International SOI Conference | Newport Beach , CA | |
| 03-06 | 2003年9月 | NiSi MOCVD for FinFET and UTB-SOI | A. Ogura | H. Wakabayashi, M. Ishikawa, T. Kada, H. Machida and Y. Ohshita | IEEE International SOI Conference | Newport Beach , CA | |
| 03-07 | 2003年10月 | Precursors for NiSi MOCVD | T. Kada | M. Ishikawa, H. Machida, Y. Ohshita and A. Ogura | Advanced Metallization Conference 2003 | Tokyo | |
| 03-08 | 2003年11月 | SOI ? current status and trend in the future | A. Ogura | The Forum on the Science and Technology of Silicon Materials 2003 | Kanagawa | invited | |
| 03-09 | 2003年11月 | Vacancy-type defects in SOI wafers probed by a monoenergetic positron beam | A. Uedono | A. Ogura, N. Hattori, J. Kudo, and T. Nishikawa | The Forum on the Science and Technology of Silicon Materials 2003 | Kanagawa | invited |
| 03-10 | 2003年12月 | Sub-10-nm Planar-Bulk-CMOS Devices using Lateral Junction Control | H. Wakabayashi | S. Yamagami, N. Ikezawa, A. Ogura, M. Narihiro, K. Arai,Y. Ochiai, K. Takeuchi, T. Yamamoto, and T. Mogami | Interanbtional Electron Devices Meeting, Technical Digest 989 | WashingtonD.C |
