| 発行年月 | タイトル | 第一著者 | 共著者 | 会議名 | 開催場所 | 備考 | |
| 04-01 | 2004年5月 | Properties of CVD precursors for Ni | T. Kada | M. Ishikawa, H. Machida, A. Ogura, and Y. Ohshita | Fourteenth International Conference on Crystal Growth | Grenoble | |
| 04-02 | 2004年6月 | Surface reactions in Ni MOCVD using cyclopentadienylallylnickel as a precursorProperties of CVD precursors for Ni | M. Ishikawa | T. Kada, H. Machida, A. Ogura, and Y. Ohshita | Fourteenth International Conference on Crystal Growth | Grenoble | |
| 04-03 | 2004年7月 | Crystalinity Estimate of Commercially Available Strained-Si Wafers using Synchrotron Highly Parallel X-ray Microbeam | K. Fukuda | N. Tomita, Y. Tsusaka, Y. Kagoshima, J. Matsui, and A Ogura | 7th Biennial Conference on High Resolution X?Ray Diffraction and Imaging | Czech Republic | |
| 04-04 | 2004年9月 | Depth Profiling of Si/Si1-xGex Structures by Micro-Raman Imaging | T. Mitani | S. Nakashima, H. Okumura and A. Ogura | International Conference on Solid State Devices and Materials | Tokyo | |
| 04-05 | 2004年10月 | Ni thin films deposition using tetrakistrifluorophosphinenickel (0), Ni(PF3)4 | M. Ishikawa | T. Kada, H. Machida, K. Soai, A. Ogura, Y. Ohshita | Advanced Metallization Conference 2004 | Tokyo | |
| 04-06 | 2004年11月 | Requirement for present and future SOI | A. Ogura | O. Okabayashi | The 4th Internaitonal Symposium on Advanced Science and Technology of Silicon Materials | Hawaii | Inveited |
| 04-07 | 2004年11月 | Characterization of SOI wafers by using synchrotron X-Ray microbeam | J. Matsui | Y. Tsusaka, K. Fukuda, Y. Kagoshima, A. Ogura | The 4th Internaitonal Symposium on Advanced Science and Technology of Silicon Materials | Hawaii | Inveited |
| 04-08 | 2004年11月 | Photoluminescence chracterization of strained Silicon-on-Insulator wafers | H. Mitsuyama | M. Tajima, K. Ohnishi, A. Ogura | The 4th Internaitonal Symposium on Advanced Science and Technology of Silicon Materials | Hawaii | |
| 05-01 | 2005年5月 | Evaluation of commercial SGOI and SSOI wafers comparing with epitaxially grown strained-Si by means of laser confocal inspection system | A. Ogura | O. Okabayashi | International Symposium on Silicon-on-insulator Technology and Devices | Quebec City. Canada | |
| 05-02 | 2005年5月 | Nickel thin film deposition using Ni (PF3)4 for LSI electrode | M. Ishikawa | H. Machida, A. Ogura, and Y. Ohshita | Electrochemical Society Meeting | Quebec City. Canada | |
| 05-03 | 2005年7月 | Crystallinity Estimation of Strained-Si Wafers by Using Highly Parallel X-Ray Microbeam |
Y. Tsusaka | K. Fukuda, N. Tomita, K. Hayashi, Y. Kagoshima, J. Matsui1 and A. Ogura | The 8th International Conference on X-ray Microscopy |
Himeji, Japan | |
| 05-04 | 2005年8月 | Estimation of Lattice Structure of Strained-Si Wafers Using Highly Parallel X-Ray Microbeam (I) | K. Fukuda | N. Tomita, K. Hayashi, Y. Tsusaka, Y. Kagoshima, J. Matsui and A. Ogura | XX Congress of the International Union of Crystallography | Florence, Italy | |
| 05-05 | 2005年8月 | Estimation of Lattice Structure of Strained-Si Wafers Using Highly Parallel X-Ray Microbeam (II) | Y. Tsusaka | K. Fukuda, N. Tomita, K. Hayashi, Y. Kagoshima, J. Matsui and A. Ogura | XX Congress of the International Union of Crystallography | Florence, Italy | |
| 05-06 | 2005年9月 | Composition control of Ni-silicide by CVD using Ni(PF3)4 and Si3H8 | M. Ishikawa | I. Muramoto, H. Machida, Y. Ohshita, S. Imai, and Ａ．Ogura | International Conference on Solid State Devices and Materials | Kobe, Japan | |
| 05-07 | 2005年9月 | UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si | I. Chiba | R. Shimidzu, K. Yamasaki, D. Kosemura, S. Tanaka, and A. Ogura | International Conference on Solid State Devices and Materials | Kobe, Japan | |
| 05-08 | 2005年10月 | Relaxation of Strained-SOI substrates by RTA process | K. Yamasaki | D. Kosemura, S. Tanaka, A. Ogura, I Chiba, and R. Shimidzu | IEEE International SOI Conference | Howaii, USA | |
| 05-09 | 2005年10月 | Chemical Vapor Deposition of Ni-silicide for gate electrode | M. Ishikawa | I. Muramoto, H. Machida, Y. Ohshita, S. Imai, and Ａ．Ogura | Advanced Metallization Conference 2005 | Tokyo | |
| 05-10 | 2005年11月 | Ni-silicide precursor for gate electrode | M. Ishikawa | I. Muramoto, H. Machida, S. Imai Ａ．Ogura, H. Suzuki, and Y. Ohshita, | 27th International Symposium on Dry Process | Jeju, Korea |
