| 発行年月 | タイトル | 第一著者 | 共著者 | 会議名 | 開催場所 | 備考 | |
| 85-01 | 1985年8月 | Minimization of Residual Stress in SOI Films | A. Ogura | K. Egami and M. Kimura | Conference on Solid State Devices and Materials. | Tokyo | |
| 86-01 | 1986年8月 | Atomic Layer Epitaxy of Uniform GaAs on 3?inch Substrate in Low Pressure MOCVD System | K. Mori | A. Ogura, M. Yoshida and H. Terao | Conference on Solid State Devices and Materials | Tokyo | |
| 87-01 | 1987年8月 | Gas Source Si?MBE Using SiH4 | H. Hirayama | T. Tatsumi, A. Ogura and N. Aizaki | Conference on Solid State Devices and Materials | Tokyo | |
| 88-01 | 1988年5月 | High?speed VTR Observation of SOI Laser Annealing | A. Ogura | N. Aizaki and H. Terao | International Workshop on Future Electron Devices ?Three Dimensional Integration | Zao, Miyagi | |
| 88-02 | 1988年11月 | Interface Structures in Lateral Seeding Epitaxial Si on SiO2 | A. Ogura | N. Aizaki and H. Terao | Fall Meeting of The Materials Research Society | Boston | |
| 89-01 | 1989年9月 | Si/SiO2 Interface Structures in SOI and Thermally Oxidized S | A. Ogura | N. Aizaki | International Symposium on Passivity | Sappora | |
| 89-02 | 1989年10月 | Novel Technique for Si Epitaxial Lateral Overgrowth: Tunnel Epitaxy | A. Ogura | Y. Fujimoto | International Workshop on Future Electron Devices | Kochi | |
| 90-01 | 1990年5月 | Improvement of SiO2/Si Interface Flatness by Post Oxidation Anneal | A. Ogura | International Symposium on Silicon Materials Science and Technology | Tront | ||
| 90-02 | 1990年6月 | Novel Technique for Si Epitaxial Lateral Overgrowth: Tunnel Epitaxy | A. Ogura | Y. Fujimoto | Annual Conference of the Electronic Material Committee | Santa Barbara | |
| 91-01 | 1991年10月 | An Investigation on the Cutoff Characteristics of sub-quater-micron SOI MOSFET | R, Koh | A. Ogura | IEEE International SOI Conference | Vail, Co | |
| 93-01 | 1993年 | Raman spectroscopy of Si cluster | A. Ogura | H.C. Honea, C.A. Murray, K. Ragavachari, W.O. Sprenger and W.L. Brown | Gorden Reserch Conference | New Hampshar | |
| 93-02 | 1993年11月 | Raman spectroscopy of size selected, matrix isolated Si clusters | A. Ogura | H.C. Hanea, C.A. Murray, K. Ragavachari, W.O. Sprenger, M.F. Jarrold and W.L. Brown | Fall Meeting of The Material research Society | Boston | |
| 94-01 | 1994年3月 | Raman spectroscopy of matrix-isolated monodisperse Si clusters | K. Ragavachari, W.L. Brown, W.O. Sprenger, A. Ogura, E.C. Honea and M.F. JarroldC.A. Murray | Meeting of the American Physics Society | Florida | ||
| 95-01 | 1995年9月 | Study on Size Selected, Matrix Isolated Si clusters | A. Ogura | H.C. Hanea, C.A. Murray, K. Ragavachari, W.O. Sprenger, M.F. Jarrold and W.L. Brown | International Symposium on Small Particles and Inorganic Clusters | Kobe | |
| 95-02 | 1995年10月 | Highly Uniform SOI Fabrication by Appling Voltage during KOH Etching of Bonded Wafers | A. Ogura | IEEE International SOI Conference | Tucson | ||
| 96-01 | 1996年4月 | Evaluation of the Depth Profile of Defects in SIMOX | A. Ogura | Spring Meeting of The Material Research Society | San Franｃisco | ||
| 96-02 | 1996年8月 | Thinning of SOI Bonded Wafers by Applying Voltage during KOH | A. Ogura | International Conference on Solid State Devices and Materials | Yokohama | ||
| 97-01 | 1997年8月 | Extension of Dose Window for Low Dose SIMOX | A. Ogura | international Symposium on Silicon-on-insulator Technology and Devices | St Luis | ||
| 97-02 | 1997年9月 | Evaluation of electron trap levels in SIMOX burid oxide by transient photocurrent spectroscopy | Y. Miura | K. Hamada, T. Kitano and A. Ogura | International Conference on Solid State Devices and Materials | Hamamatsu | |
| 97-03 | 1997年9月 | Precise Measurement of Strain in SOI Induced by Local Oxidation | S. Kimura | A. Ogura | International Conference on Solid State Devices and Materials | Hamamatsu | |
| 98-01 | 1998年9月 | Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H+ Splitting | A. Ogura | M. Tajima | International Conference on Solid State Devices and Materials | Hiroshima | |
| 98-02 | 1998年10月 | Defect Characterization in UNIBOND Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy | M. Tajima | A. Ogura | IEEE International SOI Conference | Stuart, FL | |
| 99-01 | 1999年5月 | Novel SIMOX with BOX at Damage Peak | A. Ogura | international Symposium on Silicon-on-insulator Technology and Devices | Paris | ||
| 99-02 | 1999年9月 | Measurement of Impurity Distribution Implanted into SOI substrates | A. Ogura | M. Hiroi | International Conference on Solid State Devices and Materials | Tokyo | |
| 99-03 | 1999年10月 | Evaluation of buried oxide formation in low-dose SIMOX process | A. Ogura | H. Ono | International Symposium on Control of Semiconductor Interfaces | Karuizawa | |
| 00-01 | 2000年8月 | Evaluation of SOI substrates by positron annihilation | A. Ogura | A. Uedono, and S. Tanigawa | International Conference on Solid State Devices and Materials | Sendai | |
| 00-02 | 2000年10月 | Photoluminescence Analysis of Annealing Process in Low-Dose SIMOX Wafers | M. TajimaS. Ibuka, J. Takiguchi, A. Mizoguchi, and A. Ogura | IEEE International SOI Conference | Wakefield MA | ||
| 00-03 | 2000年10月 | LPCVD of TaCN thin film for barrier layer in Cu interconnection | A. Hoshino | S. Hiiro, and H. Machida, Y. Ohshita, A. Ogura | Advanced Metallization Conference | Tokyo | |
| 00-04 | 2000年11月 | Control of buried oxide formation in low-dose SIMOX process | A. Ogura | Advanced Science and Technology of Silicon Materials | Hawaii | invited |
