国際会議 その3 (2006年)

発行年月 タイトル 第一著者 共著者 会議名 開催場所 備考
06-01 2006年3月 Measurement of in-plane and depth profiles of strain in strained-Si substrates D. Kosemura K. Yamasaki, S. Tanaka, and A. Ogura Second Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits Grenoble, France
06-02 2006年5月 Discussion on Issues Toward 450mm Wafer M. Watanabe T. Fukuda, A. Ogura, Y. Kirino and M. Kohno Silicon Materials Science and Technology Simposium X, 209th Meeting of The Electrochemical Society Denver, Colorado Invited
06-03 2006年7月 Chemical Vapor Deposition of NiSi using Ni(PF3)4 and Si3H8 M. Ishikawa I. Muramoto, H. Machida, S. Imai, Y. Ohshita and A, Ogura Asia-Pacific Conference on Semiconducting Silicides Kyoto
06-04 2006年8月 Strain engineering and evaluation in advanced LSI technology A. Ogura 20th International Conference on Raman Spectroscopy Yokohama Invited
06-05 2006年9月 Photoluminescence characterization of defects in multi-crystalline silicon wafers H. Sugimoto M. Inoue, M. Tajima, Y. Ohshita, and A. Ogura 21st European Photovoltaic Solar Energy
Conference
Dresden, Germany
06-06 2006年9月 W-CVD using biscyclopentadienyltungsten system S. Imai T. Kagawa, H. Kurozaki, A. Ogura, M. Ishikawa, I. Muramoto, H. Machida, and Y. Ohshita Advanced Metallization Conference, Asian Session Tokyo
06-07 2006年9月 Properties of chemical reaction during Ni and Ni-silicide deposition using Ni(PF3)4 and Si3H8 M. Ishikawa I. Muramoto, H. Machida, S. Imai, A. Ogura, Y. Ohshita Advanced Metallization Conference, Asian Session Tokyo
06-08 2006年10月 Evaluation of SOI substrates with local or global strain by means of in-plane XRD measurement Daisuke Kosemura, Kosuke Yamasaki, Satoshi Tanaka, Yasuto Kakemura, Tetsuya Yoshida, and Atsushi Ogura IEEE International SOI Conference Niagara Falls
06-09 2006年10月 W-CVD using biscyclopentadienyltungsten system S. Imai T. Kagawa, H. Kurozaki, A. Ogura,M. Ishikawa, I. Muramoto, H. Machida, and Y. Ohshita Advanced Metallization Conference, US Session San Diego
06-10 2006年11月 Evaluation of polycrystalline silicon for solar-cells by small p-n diode array S. Tanaka K. Imai, A. Ogura, K. Arafune, H. Kawai, F. Kusuoka, Y. Ohshita, M. Inoue,.M. Tajima Fall Meeting of The Material research Society Boston
06-11 2006年11月 SiO2/Si Interfacial Lattice Strain Revealed by Extremely Asymmetric X-ray Diffraction H. Yoshida K. Akimoto, Y. Ito, T. Emoto, N. Yamamoto, Y. Oshita, A. Ogura 2006 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY Kawasaki
06-12 2006年11月 X-ray photoelectron spectroscopy study on SiO2 formed on several orientated c-Si in high pressure water vapor N. Yamamoto S. Tanaka, H. Sai, R. Imai, E. Ikenaga, I. Hirosawa, Y. Oshita, and A. Ogura 2006 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY Kawasaki

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国際会議 その4 (04-05年) へ

国際会議 その2 (2007年) へ