学術論文 〜99年					2011/4/11 更新
発行年月	タイトル	掲載紙名	第一著者	共著者	発行所	備考
1983年8月	Reduction of contact resistivity by As redistribution during Pd2Si formation	J. Appl. Phys. Vol.54, pp.4679-4682	I. Ohdomari	M. Hori, T. Maeda, A. Ogura,H. Kawarada, T. Hamamoto and K. Sano	American Institute of Physics
1984年11月	Low-temperature redistribution of As in Si during Ni silicide formation	J. Appl. Phys. Vol.56, pp.2725-2728	I. Ohdomari	M. Akiyama, T. Maeda, M. Hori, C. Takebayashi, A. Ogura, T. Chikyo, I. Kimura, K. Yoneda, and K.N. Tu	American Institute of Physics
1985年11月	Germanium film on SiO2 with a <100> texture deposited by the rf‑sputterig technique	Appl. Phys. Lett. Vol.47, pp.1059-1061	K. Egami	A. Ogura	American Institute of Physics
1985年12月	Minimization of Residual Stress in SOI Films by Using AlN Interlaid Insulator	Jpn. J. Appl. Phys. Vol.24,　pp.L669-671	A. Ogura	K. Egami and M. Kimura	The Institute of Pure and Applied Physics
1986年1月	Low‑temperature grain growth of initially <100> textured polycrystalline silicon films amorphized by silicon ion implantation with normal incident angle	J. Appl. Phys. Vol.59, pp.289-291	K. Egami	A. Ogura and M. Kimura	American Institute of Physics
1987年1月	Grain growth observation of <100> textured germanium film by transmission electron microscopy	Appl. Phys. Lett Vol.50,pp.16-18	A. Ogura	H. Terao	American Institute of Physics
1987年11月	Observation on laser‑annealed silicon‑on‑insulator structures by cross‑section  transmission electron microscopy	J. Appl. Phys. Vol. 62, pp.4170-4173	A. Ogura	H. Terao	American Institute of Physics
1988年3月	Gas source silicon molecular beam epitaxy using silane	Appl. Phys. Lett. Vol.51, pp.2213-	H. Hirayama	T. Tatsumi, A. Ogura and N. Aizaki	American Institute of Physics
1988年9月	Grain growth of <100> textured Ge on a　SiO2/Si3N4 stripe	Appl. Phys. Lett. Vol.53, pp.22-24	A. Ogura	N. Aizaki and H. Terao	American Institute of Physics
1989年3月	High‑speed video observation of laser recrystallization for semiconductor‑on‑insulator	J. Appl. Phys. Vol.65, pp.752-754	A. Ogura	N. Aizaki and H. Terao	American Institute of Physics
1989年8月	Si/SiO2 interface structures in laser‑recrystallized Si on SiO2	Appl. Phys. Lett. Vol.55, pp.547-549	A. Ogura	N.Aizaki	American Institute of Physics
1989年11月	Novel technique for Si epitaxial lateral overgrowth : Tunnel epitaxy	Appl. Phys. Lett. Vol.55, 2205-2207	A. Ogura	Y. Fujimoto	American Institute of Physics
1990年	Si/SiO2 Interface Structures in SOI and Thermally Oxidized Si	Solid State Electronics, Vol.33 pp.275-280	A. Ogura	N. Aizaki	Elsevier B.V.
1990年9月	Non‑seeded Crystalline Orientation Control for Si‑on‑insulator Laser Recrystallization	Jpn. J. Appl. Phys. Vol.29, pp.1630-1633	A. Ogura		The Institute of Pure and Applied Physics
1990年12月	Extremely Thin and Defect Free Si‑on‑insulator Fabrication by Tunnel Epitaxy	Appl. Phys. Lett. Vol.57, pp.2806-2807	A. Ogura		American Institute of Physics
1991年3月	Improvement of SiO2/Si interface flatness by post oxidation annea	J. Electrochem. Soc., Vol.138 pp.807-810	A. Ogura		The Electrochemical Society, Inc.
1993年4月	50nm-thick Silicon-on-Insulator Fabrication by Advanced Epitaxial Lateral Overgrowth: Tunnel Epitaxy	J. Electrochem. Soc. Vol.140, pp.1125-1130	A. Ogura	A. Furuya and R. Koh	The Electrochemical Society, Inc.
1993年11月	Raman spectra of size-selected silicon clusters and comparison with calculated structures	Nature Vol.366, pp.42-44	E.C. Honea	A. Ogura, C.A. Murray, K. Ragavachari, W.O. Sprenger, M.F. Jarrold and W.L. Brown	The Electrochemical Society, Inc.
1996年1月	Control of Thickness Variation in Si-on-Insulator Bonded Wafers by Applying Voltages during KOH Etching	Jpn. J. Appl. Phys., Vol.35, pp.L71-73	A. Ogura		Nature Publishing Group
1996年1月	Characterization of surface imperfection of silicon-on-insulator wafers by means of extremely asymmetric x-ray reflection topography	Appl. Phys. Lett., Vol.68, pp.693-695	S. Kimura	A. Ogura and T. Ishikawa	The Institute of Pure and Applied Physics
1996年9月	Evaluation of the Depth Profile of Defects in Ultra-Thin Si Film on Buried SiO2 Formed by Implated Oxygen	Appl. Phys. Lett., Vol.69, pp.1367-1369	A. Ogura	T Tatsumi, T. Hamajima and H. Kikudhi	American Institute of Physics
1997年3月	Thinning of SOI bonded wafers by applying voltage during KOH etvhing. -Improvement of thickness variation by reducing leakage current	Jpn. J. Appl. Phys., Vol.36, pp.1519-1521	A. Ogura		American Institute of Physics
1997年3月	Characterization of surface imperfection of a bonded silicon wafer by means of extremely asymmetric X-ray reflection topography	Photon Factory Activity Report, Vol.13, pp.305-	S. Kimura	A. Ogura and T. Ishikawa	The Institute of Pure and Applied Physics
1998年3月	Evaluation of electron trap levels in buried SiO2 by transient photocurrent spectroscopy	Jpn. J. Appl. Phys., Vol.37, pp.1274-1277	Y. Miura	K. Hamada, T. Kitano and A. Ogura	The Institute of Pure and Applied Physics
1998年3月	Precise Measurement of Strain in Thin Si film	Jpn. J. Appl. Phys., Vol.37, pp.1282-1284	S. Kimura	A. Ogura	The Institute of Pure and Applied Physics
1998年5月	Extension of Dose Window for Low-Dose Separation by Implanted Oxygen	J. Electrochem. Soc., Vol.145, pp.1735-1737	A. Ogura		The Electrochemical Society, Inc.
1998年6月	Infrared Study of Silicon oxide Formation in Silicon Wafers Implanted with Oxygen	Appl. Phys. Lett., Vol.72, pp.2853-2855	H. Ono	T. Ikarashi and A. Ogura	American Institute of Physics
1998年10月	Defect Analysis and H+ Split Silicon-on-Insulator Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy	Jpn. J. Appl. Phys., Vol.37,　pp.L1199-1201	M. Tajima	A. Ogura, T. Karasawa and A. Mochizuki	The Institute of Pure and Applied Physics
1999年4月	Formation of Buried Oxide Film at the Damage Peak Induced by Oxygen Implantation into a Si Substrate	Appl. Phys. Lett., Vol.74, pp. 2188-2190	A. Ogura		American Institute of Physics
1998年12月	Structures and coalescence behavior of size-selected silicon nanoclusters studied by surface-plasmon-polariton enhanced Raman spectroscopy	J. Chem. Phys., Vol.110, pp.12161-12171	C. FJlix	E.C. Honea, A. Ogura, C.A. Murray, K. Raghavachari, W.O. Sprenger, M.F. Jarrold, W.L. Brown and D.R. Peal	American Institute of Physics