| 学術論文 18年〜19年 | 2020/4/121更新 | ||||||
| 発行年月 | タイトル | 掲載紙名 | 第一著者 | 共著者 | 発行所 | 備考 | |
| 2018年2月 | Improved leakage current properties of ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors | Thin Solid Films 655, 48–53(2018). | 
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Toshihide Nabatame, Tomomi Sawada, Kazunori Kurishimaa, Naomi Sawamoto, Akihiko Ohi, Toyohiro Chikyow, Atsushi Ogura | Elsevier B.V. | https://doi.org/10.1016/j.tsf.2018.02.010 | |
| 2018年4月 | Origin of room-temperature photoluminescence around C-line in electron-irradiated Si and its applicability for quantification of carbon | Applied Physics Express 11, 041301 (2018) | Michio Tajima | Yoichiro Ishikawa, Hirotatsu Kiuchi, and Atsushi Ogura | IOP Science | https://doi.org/10.7567/APEX.11.041301 | |
| 2018年4月 | Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis | Jpn. J. Appl. Phys. 57, 04FJ04-1-6 (2018). | Takahiro Nagata | Yoshihisa Suzuki, Yoshiyuki Yamashita, Atsushi Ogura and Toyohiro Chikyow | IOP Science | https://doi.org/10.7567/JJAP.57.04FJ05 | |
| 2018年5月 | Evaluation of saw damage using diamond-coated wire in crystalline silicon solar cells by photoluminescence imaging | Jpn. J. Appl. Phys. 57, 055702-1-5 (2018). | Kosuke Kinoshita | Takuto Kojima, Ryota Suzuki, Tomoyuki Kawatsu, Kyotaro Nakamura, Yoshio Ohshita and Atsushi Ogura | IOP Science | https://doi.org/10.7567/JJAP.57.055702 | |
| 2018年6月 | Investigation on Mo1-xWxS2 fabricated by co-sputtering and post-deposition sulfurization with (t-C4H9)2S2 | Jpn. J. Appl. Phys. 57, 06HB04-1-4 (2018). | Yusuke Hibino | Seiya Ishihara, Naomi Sawamoto, Takumi Ohashi, Kentarou Matsuura, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Hitoshi Wakabayashi, and Atsushi Ogura | IOP Science | https://doi.org/10.7567/JJAP.57.06HB04 | |
| 2018年7月 | Control of dipole properties in high-k and SiO2 stacks on Si substrates with tricolor superstructure | Appl. Phys. Lett. 113, 012103-1-5 (2018). | Yasushi Hotta, | Iwao Kawayama, Shozo Miyake, Ikuya Saiki, Shintaro Nishi, Kota Yamahara, Koji Arafune, Haruhiko Yoshida, Shin-ichi Satoh, Naomi Sawamoto, Atsushi Ogura, Akira Ito, Hidetoshi Nakanishi, Masayoshi Tonouchi, and Hitoshi Tabata | American Insistute of Physice | doi: 10.1063/1.5034494 | |
| 2018年8月 | Evaluation of oxygen precipitation behavior in n-type Czochralski-Si for photovoltaic by infrared tomography: Effects of carbon concentration and annealing process conditions | Jpn. J. Appl. Phys. 57, 08RB01-1-5 (2018). | Kosuke Kinoshita | Takuto Kojima, Hiroto Kobayashi, Yoshio Ohshita, and Atsushi Ogura | IOP Science | https://doi.org/10.7567/JJAP.57.08RB01 | |
| 2018年8月 | Determination of C concentration in P-doped ntype Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation | Jpn. J. Appl. Phys. 57, 08RB06-1-4 (2018). | Yoichiro Ishikawa | Michio Tajima, Hirotatsu Kiuchi, Atsushi Ogura, Yoshiji Miyamura, Hirofumi Harada, and Koichi Kakimoto | IOP Science | https://doi.org/10.7567/JJAP.57.08RB06 | |
| 2018年8月 | Distribution of light-element impurities in Si crystals grown by seedcasting method | Jpn. J. Appl. Phys. 57 08RB19-1-5 (2018). | Ryohei Nakayama | Takuto Kojima, Atsushi Ogura, and Kentaro Kutsukake | IOP Science | https://doi.org/10.7567/JJAP.57.08RB19 | |
| 2018年8月 | Study on chemical bonding states at electrode–silicon interface fabricated with fire-through control paste | Jpn. J. Appl. Phys. 57 08RB23-1-4 (2018). | Takuya Hiyama | Takuto Kojima, Kosuke Kinoshita, Tappei Nishihara, Kohei Onishi, Kazuo Muramatsu, Aki Tanaka, Yoshio Ohshita, and Atsushi Ogura | IOP Science | https://doi.org/10.7567/JJAP.57.08RB23 | |
| 2018年9月 | Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy | J. Electronic Matrials 47, 5050-5054 (2018). | Takahiro Suzuki | Ryo Yokogawa, Kohei Oasa, Tatsuya Nishiwaki, Takeshi Hamamoto, and Atsushi Ogura | Springer | ||
| 2018年10月 | Determination of Low C Concentration in Czochralski-Grown Si for Solar Cell Applications by Liquid-N-Temperature Photoluminescence After Electron Irradiation | J. Electronic Matrials47, 5056-5060 (2018). | Michio Tajima | Hirotatsu Kiuchi, Fumito Higuchi, Fumito Higuchi, Yoichiro Ishikawa, Atsushi Ogura | Springer | ||
| 2018年11月 | Effect of carbon doping on threshold voltage and mobility of
In-Si-O thin-film transistors |
J. Vac. Sci.&Tech. B, 36, 061206-1-7 (2018). | Kazunori Kurishima, | Toshihide Nabatame, Nobuhiko Mitoma, Takio Kizu, Shinya Aikawa,
Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow, and Atsushi Ogura |
American Vacuum Society | https://doi.org/10.1116/1.5039665 | |
| 2018年12月 | Potential of chemical rounding for the performance enhancement of pyramid textured p-type emitters and bifacial n-PERT Si cells | Current Applied Physics 18, 1268–1274 (2018). | Inseol Song | Hyunju Leeb, Sang-Won Lee, Soohyun Bae, Ji Yeon Hyun, Yoonmook Kang, Hae-Seok Lee, Yoshio Ohshita,, Atsushi Ogura, Donghwan Kim | Elsevier B.V. | https://doi.org/10.1016/j.cap.2018.07.004 | |
| 2018年12月 | Sputter-Deposited-MoS2 nMISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration | J. Electron Device Soc., 6, 1246-1252 (2018) | Kentaro Matsuura | Jun’ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, and Hitoshi Wakabayashi | IEEE | Digital Object Identifier 10.1109/JEDS.2018.2883133 | |
| 2018年12月 | Suppression of Sulfur Desorption of High-Temperature Sputtered MoS2 Film by Applying DC Bias | ECS Transactions, 85 (13) 531-539 (2018) | Y. Hibino | S. Ishihara, Y. Oyanagi, N. Sawamoto, T. Ohashi, K. Matsuura, H. Wakabayashi, A. Ogura | Electrochemical Society | 10.1149/08513.0531ecst | |
| 2018年9月 | Strain Evaluation of Laser-annealed SiGe Thin Layers | ECS Transactions, 86 (7) 59-65 (2018) | S. Komagoa, | T. Murakama, K. Yoshioka, R. Yokogawa, b, J. O. Borland, T. Kuroi, T. Tabata, K. Huet, N. Horiguchi, A. Ogura | Electrochemical Society | 10.1149/08607.0059ecst | |
| 2018年9月 | Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth | ECS Transactions, 86 (7) 87-93 (2018) | R. Yokogawa, | S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, and A. Ogura | Electrochemical Society | 10.1149/08607.0087ecst | |
| 2018年9月 | Determination of Phonon Deformation Potentials in Carbon-doped Silicon | ECS Transactions, 86 (7) 419-425 (2018) | K. Yoshioka, | R. Yokogawa, T. Murakami, S. Komago, N. Sawamoto, and A. Ogura | Electrochemical Society | 10.1149/08607.0419ecst | |
| 2018年10月 | Reliability of Al2O3/In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Gate-Bias Stress | ECS Transactions, 86 (11) 135-145 (2018) | Kazunori Kurishima | Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, and Atsushi Ogura | Electrochemical Society | 10.1149/08611.0135ecst | |
| 2018年10月 | Ferroelectricity of HfxZr1-xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniques | ECS Transactions, 86 (6) 31-38 (2018). | T. Onaya, | T. Nabatame, N. Sawamoto, K. Kurishima, A. Ohi, N. Ikeda, T. Nagatabe, and A. Ogura | Electrochemical Society | 10.1149/08606.0031ecst | |
| 2019年4月 | Effect of oxygen precipitation through annealing process on lifetime degradation by Czochralski-Si crystal growth conditions | Jpn. J. Appl. Phys. 58, SBBF02-1-6 (2019). | Kosuke Kinoshita | Takuto Kojima, Kohei Onishi, Yoshio Ohshita, and Atsushi Ogura | IOP Science | https://doi.org/10.7567/1347-4065/aaf87b | |
| 2019年4月 | Crystal growth of a MnS buffer layer for non-polar AlN on Si (100) deposited by radio frequency magnetron sputtering | Jpn. J. Appl. Phys. 58, SBBK03-1-6 (2019). | Kota Tatejima | Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Setsu Suzuki, Atsushi Ogura, and Toyohiro Chikyow | IOP Science | https://doi.org/10.7567/1347-4065/aafd8e | |
| 2019年4月 | Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes | Jpn. J. Appl. Phys., 58, SBBD07-1-6 (2019) | Hiroto Kobayashi | Ryo Yokogawa, Kosuke Kinoshita, Yohichiroh Numasawa, Atsushi Ogura, Shin-ichi Nishizawa, Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Shin-ichi Suzuki, Munetoshi Fukui, Kiyoshi Takeuchi, and Toshiro Hiramoto | IOP Science | https://doi.org/10.7567/1347-4065/aafd90 | |
| 2019年5月 | Evaluation of thermal conductivity characteristics in Si nanowire covered with oxide by UV Raman spectroscopy | Japanese Journal of Applied Physics 58, SDDF04 (2019). | Ryo Yokogawa | Motohiro Tomita, Takanobu Watanabe, and Atsushi Ogura | IOP Science | ||
| 2019年6月 | Improvement in ferroelectricity of Hfx Zr1-x O2 thin films using top- and bottom-ZrO2 nucleation layers | APL Materials, 7(6),061107-1-7(2019) | T. Onaya | T. Nabatame, N. Sawamoto, A. Ohi, N. Ikeda, T. Nagata, and A. Ogura | American Institute of Physic | 10.1063/1.5096626 | |
| 2019年6月 | Evaluation of Sn-Doped Indium Oxide Film and Interface Properties on a-Si Formed by Reactive Plasma Deposition | ECS Journal of Solid State Science and Technology, 8 (6) Q101-Q105 (2019). | T. Nishihara, | T. Kamioka, H. Kanai, Y. Ohshita, S. Yasuno, I. Hirosawa, and A. Ogura | Electrochemical Society | 10.1149/2.0181906jss | |
| 2019年6月 | Effects of surface recombination and excitation power on quantitative analysis of carbon in Si using room-temperature photoluminescence after electron irradiation | Japanese Journal of Applied Physics 58, 076502 (2019). | Yoichiro Ishikawa, | Michio Tajima, and Atsushi Ogura | IOP Science | https://doi.org/10.7567/1347-4065/ab0732 | |
| 2019年7月 | Ferroelectricity of Hfx Zr1-xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition | Microelectronic Engineering, 215, 111013-1-5(2019) | T. Onaya | T. Nabatame, N. Sawamoto, A. Ohi, N. Ikeda, T. Nagata, and A. Ogura | Elsevier | 10.1016/j.mee.2019.111013 | |
| 2019年8月 | Effect of additives in electrode paste of p-type crystalline Si solar cells on potential-induced degradation | Solar Energy, 188, 1292-1297(2019) | S. Jonai | A. Tanaka, K. Muramatsu, G. Saito, K. Nakamura, A. Ogura, Y. Ohshita, and A. Masuda | Elsevier | 10.1016/j.solener.2019.07.012 | |
| 2019年10月 | Anisotropic Biaxial Strain Evaluation in Carbon-Doped Silicon using Water-Immersion Raman Spectroscopy | ECS Transactions, 92 (4) 33-39 (2019). | K. Yoshioka | R. Yokogawa, N. Sawamotoa, and A. Ogura | Electrochemical Society | 10.1149/09204.0033ecst | |
| 2019年10月 | Effects of damages induced by indiumtin-oxide reactive plasma deposition on minority carrier lifetime in silicon crystal | AIP Advances 9, 105219 (2019); | Takefumi Kamioka | Yuki Isogai, Yutaka Hayash , Yoshio Ohshita, and Atsushi Ogura | American Insititute of Physics | https://doi.org/10.1063/1.5124903 | |
| 2019年11月 | Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate | Japanese Journal of Applied Physics 58, 125502 (2019) | Koji Arafune | Sho Kitano, Haruhiko Yoshida, Atsushi Ogura, and Yasushi Hotta | IOP Science | https://doi.org/10.7567/1347-4065/ab50ec | |