学術論文 12〜13年 2014/2/13 更新
発行年月 タイトル 掲載紙名 第一著者 共著者 発行所 備考
2012年2月 Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy Jpn. J. Appl. Phys. 51, 02BA03(1-7) (2012) http://www.ecsdl.org/jimages/spacer.gif,http://www.ecsdl.org/jimages/spacer.gif
Daisuke Kosemura
Motohiro Tomita, Koji Usuda, and Atsushi Ogura The Japan Society of Applied Physics  
2012年2月 Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer Jpn. J. Appl. Phys. 51, 02BP08(1-3) (2012) Tomihisa Tachibana, Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, and Atsushi Ogura The Japan Society of Applied Physics  
  Experimental Comparisons between Tetrakis(dimethylamino)titanium
(TDMAT) Precursor Based Atomic-Layer Deposition (ALD) and Physical-Vapor Deposition (PVD) Titanium-Nitride (TiN) Gate for High-Performance Fin-Type Metal-Oxide Semiconductor Field-Effect Transistors (FinFETs)
Jpn. J. Appl. Phys. 51,  (2012) Tetsuro Hayashida Kazuhiko Endo, Yongxun Liu, Shin-ichi O'uchi,
Takashi Matsukawa, Wataru Mizubayashi, Shinji Migita, Yukinori Morita,
Hiroyuki Ota, Hiroki Hashiguchi, Daisuke Kosemura, Takahiro Kamei,
Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Meishoku Masahara
The Japan Society of Applied Physics  
2012年3月 Variability analysis of scaled crystal channel and poly-Si channel FinFETs IEEE Transactions on Electron Devices, 59, 573-581(2012). Yongxun Liu Takahiro Kamei, Takashi Matsukawa, Kazuhiko Endo, Member, Shinichi O’uchi, Member, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, and Meishoku Masahara Institute of Electric and Electronics Engineering  
2012年3月 Fin-Height Effect on Poly-Si/PVD-TiN Stacked Gate FinFET Performance IEEE Transactions on Electron Devices, 59, 647-653 (2012). T. Hayashida Kazuhiko Endo, Member, IEEE, Yongxun Liu, Member, IEEE, Shin-Ichi O’uchi, Member, IEEE,
Takashi Matsukawa, Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Member, Hiroki Hashiguchi, Daisuke Kosemura, Takahiro Kamei, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, and Meishoku Masahara
Institute of Electric and Electronics Engineering  
2012年3月 Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells Applied Physics Express 5,  042301(2012). Takashi Sameshima Naoto Miyazaki, Yuki Tsuchiya, Hiroki Hashiguchi, Tomihisa Tachibana, Takuto Kojima, Yoshio Ohshita, Koji Arafune, and Atsushi Ogura The Japan Society of Applied Physics  
2012年3月 Demonstration of Split-Gate Type Trigate Flash
Memory With Highly Suppressed Over-Erase
IEEE Electron Device Lett., 33, 345-347 (2012). Takahiro Kamei Yongxun Liu, Member, Takashi Matsukawa, Kazuhiko Endo, Member, Shinichi O’uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Kunihiro Sakamoto, Atsushi Ogura, and Meishoku Masahara Institute of Electric and Electronics Engineering  
2012年4月 Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application Appl. Phys. Lett. 100, 143901(1-4) (2012) Hyunju Lee Tomihisa Tachibana, Norihiro Ikeno, Hiroki Hashiguchi, Koji Arafune, Haruhiko Yoshida, Shin-ichi Satoh, Toyohiro Chikyow, and Atsushi Ogura American Institute of Physics  
2012年4月 Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells J. Appl. Phys. 111, 074505(1-5) (2012) Tomihisa Tachibana Takashi Sameshima, Takuto Kojima, Koji Arafune, Koichi Kakimoto, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi, Yoshio Ohshita, and Atsushi Ogura American Institute of Physics  
2012年4月 Channel Strain Measurement in 32-nm-Node Complementary Metal–Oxide–Semiconductor Field-Effect Transistor by Raman Spectroscopy Jpn. J. Appl. Phys., 51, 04DA04 (1-5) (2012) Munehisa Takei Hiroki Hashiguchi, Takuya Yamaguchi, Daisuke Kosemura, Kohki Nagata, and Atsushi Ogura The Japan Society of Applied Physics  
2012年4月 Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlOx Jpn. J. Appl. Phys., 51, 04DP06 (1-4) (2012) Koji Arafune Shohei Miki, Ryosuke Matsutani, Junpei Hamano, Haruhiko Yoshida, Tomihisa Tachibana, Hyun Ju Lee, Atsuhi Ogura, Yoshio Ohshita, and Shin-ichi Satoh The Japan Society of Applied Physics  
2012年7月 EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells Materials Science Forum, 725, 129-132 (2012). T. Sameshima N. Miyazaki, Y. Tsuchiya, T. Tachibana, Y. Ohshita, K. Arafune, and A. Ogura Trans Tech Publications, Switzerland  
2012年7月 Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique Materials Science Forum, 725, 129-132 (2012). T. Tachibana T. Sameshima, T. Kojima, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita and A. Ogura Trans Tech Publications, Switzerland  
2012年7月 High-Speed Deep-Level Luminescence Imaging in Multicrystalline Si Solar Cells Materials Science Forum, 725, 133-136 (2012). Futoshi Okayama Michio Tajima, Hiroyuki Toyota and Atsushi Ogura Trans Tech Publications, Switzerland  
2012年7月 Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications Materials Science Forum, 725, 161-164 (2012). N. Ikeno T. Tachibana, H. Lee, H. Yoshida, K. Arafune, S. Satoh, T. Chikyow and A. Ogura Trans Tech Publications, Switzerland  
2012年7月 Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction Materials Science Forum, 725, 251-254 (2012). Y. Mizukami D.Kosemura, M. Takei, Y.Numasawa, Y.Ohshita and A.Ogura Trans Tech Publications, Switzerland  
2012年7月 Evaluation of GexSbyTez Film Grown by Chemical Vapor Deposition Materials Science Forum, 725, 289-292 (2012). Seiti Hamada Takafumi Horiike, Tomohiro Uno, Masato Ishikawa, Hideaki Machida, Yoshio Ohshita, and Atsushi Ogura Trans Tech Publications, Switzerland  
2012年10月 Stress evaluation in thin strained-Si film by polarized Raman spectroscopy using localized surface plasmon resonance Appl. Phys. Lett. 101, 172101(1-3) (2012) Hiroki Hashiguchi Munehisa Takei, Daisuke Kosemura, and Atsushi Ogura American Institute of Physics  
2012年10月 Investigation of Phonon Deformation Potentials in Si1 xGex by Oil-Immersion Raman Spectroscopy Applied Physics Express 5, 111301(1-3)  (2012)  Daisuke Kosemura Koji Usuda, and Atsushi Ogura The Japan Society of Applied Physics  
2013年2月 Characterization of anisotropic strain relaxation after isolation for strained SGOI and
SiGe/Si structure with newly developed high-NA and oil-immersion Raman method
Solid-State Electronics 83, 46–49 (2013)  Koji Usuda Tsutomu Tezuka, Daisuke Kosemura, Motohiro Tomita, Atsushi Ogura Elsevier B.V.  
2013年4月 Ion Shower Doping Technique for Selective Emitter Structure in Crystalline Silicon Solar Cells Jap. J. App. Phys. 52,  04CR09 (2013). Hiroki Hashiguchi Tomihisa Tachibana, Mari Aoki, Takuto Kojima, Yoshio Ohshita, and Atsushi Ogura The Japan Society of Applied Physics  
2013年5月 Evaluation of Stress Induced by Plasma Assisted ALD SiN Film Planar Si &SiGe: Stressors/Gate Stack ECS Transactions, 53, 51-56 (2013) Kohki Nagata Masaya Nagasaka, Takuya Yamaguchi, Atsushi Ogura, Hiroshi Oji, Jin-Young Son,  Ichiro Hirosawa, Y. Watanabe, and Y. Hirota

The society for solid-state and electrochemical science and technology  
2013年5月 GeSn Film Deposition Using Metal Organic Chemical Vapor Deposition ECS Transactions, 53, 245-250 (2013) Kohei Suda Tomohiro Uno, Tatsuya Miyakawa, Hideaki Machida, Masato Ishikawa, Hiroshi Sudo, Yoshio Ohshita, and Atsushi Ogura The society for solid-state and electrochemical science and technology  
2013年5月 Butterfly-shapeddistributionofSiNx precipitatesinmulti-crystallineSi
for solarcells
Journal of Crysta lGrowth 377, 37–42 (2013). Jianyong Li Ronit Roneel Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada , Koichi Kakimoto, Atsushi Ogura, Takashi Sekiguchi Elsevier B.V.  
2013年5月 Tensor Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate  ECS Trans. 53(1), 207-214(2013) Motohiro Tomita Daisuke Kosemura, Koji Usuda, and Atsushi Ogura The Electrochemical Society   
2013年5月 GeSn Film Deposition Using Metal Organic Chemical Vapor Deposition  ECS Trans. 53(1), 245-250(2013) Kohei Suda Tomohiro Uno, Tatsuya Miyakawa, Hideaki Machida, Masato Ishikawa, Hiroshi Sudo, Yoshio Ohshita, and Atsushi Ogura The Electrochemical Society   
2013年7月 Reduction of interfacial SiO2 at HfO2/Si interface with Ta2O5 cap J. App. Phys., 114, 014106 (4pages) (2013). Kazuyoshi Kobashi Takahiro Nagata, Atsushi Ogura, Toshihide Nabatame, and Toyohiro Chikyow American Institute of Physics  
2013年8月 Formation of Si2N2O Microcrystalline Precipitates near the Quartz Crucible Wall Coated with Silicon Nitride in Cast-Grown Silicon Appl. Phys. Express 6, 081303(1-4) (2013). Haruhiko Ono Yu Motoizumi, Hiroki Kusunoki, Kuniyuki Sato, Tomihisa Tachibana, and Atsushi Ogura The Japan Society of Applied Physics  
2013年11月 Role of i-aSi:H Layers in aSi:H/cSi Heterojunction Solar Cells IEEE JOURNAL OF PHOTOVOLTAICS, 3, 1149-1155(2013). Yutaka Hayashi Debin Li, Atsushi Ogura, and Yoshio Ohshita IEEE  
2013年11月 Ge2Sb2Te5 Film Fabrication by Tellurization of Chemical Vapor Deposited GeSb Jap. J. App. Phys. 52, 128006(1-3) (2013). Kohei Suda Tomohiro Uno, Tatsuya Miyakawa, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Yoshio Ohshita, and Atsushi Ogura The Japan Society of Applied Physics  
2013年11月 Structure Analyses of Room Temperature Deposited AlOx Passivation Films for Crystalline Silicon Solar Cells Jap. J. App. Phys. 52, 122303(1-5) (2013). Chikako Sakai Shunsuke Yamamoto, Ko Urushibata, Shohei Miki, Koji Arafune, Haruhiko Yoshida, Hyun Ju Lee, Atsushi Ogura, Yoshio Ohshita, and Shin-ichi Satoh The Japan Society of Applied Physics