学術論文 10〜11年 2013/7/1 更新
発行年月 タイトル 掲載紙名 第一著者 共著者 発行所 備考
2010年3月 Photoluminescence Analysis of Iron Contamination
Effect in Multicrystalline Silicon Wafers for Solar Cells
Journal of ELECTRONIC MATERIALS, 39(6), 747-750 (2010). MICHIO TAJIMA, MASATOSHI IKEBE, YOSHIO OHSHITA, and ATSUSHI OGURA TMS  
2010年3月 Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy Journal of ELECTRONIC MATERIALS, 39(6), 694-699 (2010). DAISUKE KOSEMURA MAKI HATTORI, TETSUYA YOSHIDA, TOSHIKAZU MIZUKOSHI, and ATSUSHI OGURA TMS  
2010年4月 Study of Charge Trap Sites in SiN Films by Hard X-Ray Photoelectron Spectroscopy Jpn. J. Appl. Phys.,49, 04DD11-1-5  (2010). Daisuke Kosemura Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Maki Hattori, Daisuke Katayama, Tatsuo Nishita, Yoshihiro Hirota2Masatake Machida, Jin-Young Son, Tomoyuki Koganezawa, Ichiro Hirosawa, and Atsushi Ogura The Institute of Pure and Applied Physics  
2010年4月 Evaluation of anisotropic biaxial stress by Raman spectroscopy with a high NA immersion objective lens Jpn. J. Appl. Phys.,49, 04DA21-1-5 (2010). Daisuke Kosemura Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Ryosuke Shimidzu, and Atsushi Ogura  The Institute of Pure and Applied Physics  
2010年4月 Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition
Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate
Metal–Oxide–Semiconductor Field-Effect Transistor
Jpn. J. Appl. Phys.,49, 04DA16-1-6 (2010). Tetsuro Hayashida Kazuhiko Endo Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Shin-ichi O’uch, Kunihiro Sakamoto, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, and Meishoku Masahara The Institute of Pure and Applied Physics  
2010年4月 Suppression of SiC surface roughening during high-temperature annealing by atmospheric control using purified Ar gas J. Mater. Res., Vol. 25, No. 4, Apr 2010 Atsushi Ogura Daisuke Kosemura, and Shingo Kinoshita Materails Research Society  
2010年4月 Suppression mechanism of volume shrinkage for SOG film by plasma treatment http://www.ecsdl.org/jimages/spacer.gif,http://www.ecsdl.org/jimages/spacer.gif
ECS Transactions, 28 (2) 347-354 (2010)
K. Nagata D. Kosemura, M. Takei, H. Akamatsu, M. Hattori, T. Koganezawa, M. Machida, J. Son, I. Hirosawa, T. Nishita, T. Shiozawa, D. Katayama, Y. Sato, Y. Hirotac and A. Oguraa The Electrochemical Society   
2010年4月 Cross-sectional UV-Raman measurement for obtaining two-dimensional channelstress
profile in extremely high-performance pMOSFETs
ECS Transactions, 28 (1) 27-32 (2010) H. Akamatsu M. Takei, D. Kosemura, K. Nagata, S. Mayuzumi, S. Yamakawa, H. Wakabayashi, A. Ogura The Electrochemical Society   
2010年5月 Structural Change by Annealing Process at S9 Grain Boundaries in Multicrystalline Silicon Substrate for Solar Cells Electrochem. Solid-State Lett., Vol. 13, Issue 7, pp. B79-B82 (2010) Tomihisa Tachibana, Junichi Masuda, Atsushi Ogura, Yoshio Ohshita, and Koji Arafune The Electrochemical Society   
2010年5月 Transverse-Optical Phonons Excited in Si using a High-Numerical-Aperture Lens Appl. Phys. Lett., 96, 212106(3pages) (2010). Daisuke Kosemura Atsushi Ogura American Institute of Physics  
2010年5月 Chemical Vapor Deposition of GeSbTe Thin Films
for Next-Generation Phase Change Memory
Jap. J. App. Phys., 49, 05FF06(1-2) (2010) Hideaki Machida Seichi Hamada, Takafumi Horiike, Masato Ishikawa, Atsushi Ogura, Yoshio Ohshita, and Takayuki Ohba The Institute of Pure and Applied Physics  
2010年6月 Channel Strain Analysis in High-Performance Damascene-Gate pMOSFETsusing High-Spatial Resolution Raman Spectroscopy J. App. Phys., 107, 124507 (6pages) (2010). Munehisa Takei Daisuke Kosemura, Kohki Nagata, Hiroaki Akamatsu, Satoru Mayuzumi, Shinya Yamakawa, Hitoshi Wakabayashi and Atsushi Ogura
American Institute of Physics  
2010年6月 Suppresion of Fermi Level Pinning and Flat Band Voltage Shift by Inserting Diamond-Like Carbon at a High-k/SiO2 Interface in a Gate Stack Structure Jpn. J. Appl. Phys., 49, 06GH03(1-4), (2010). Yuta Iwashita Tetsuya Adachi, Kenji Itaka, Atsushi Ogura, and Toyohiro Chikyow The Japan Society of Applied Physics  
2010年10月 Combinatorial investigation of ZrO2-based dielectric materials for
DRAM capacitors
ECS Transactions, 33, 339-346 (2010) Y. Kiyota Y. Iwashitaa, K.Itaka, T.Adachi, T. Chikyow and A. Oguraa The Electrochemical Society   
2010年10月 Quantitative analysis of impurities in solar-grade Si by photoluminescence spectroscopy around 20 K   Takaaki Iwai Michio Tajima, Atsushi Ogura Wiley-VCH Verlag GmbH & Co  
2010年11月 Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells Jap. J. App. Phys., 49, 110202(1-3) (2010)  Haruhiko Ono Takahide Ishizuka, Chihiro Kato, Koji Arafune, Yoshio Ohshita and Atsushi Ogura The Japan Society of Applied Physics  
2011年1月 Behavior of nickel silicide in multi-crystalline silicon for solar cells Physics Procedia 11, 163–166 (2011) T.Tachibana T. Sameshima, K. Arafune, Y. Ohshita, and A. Ogura Elsevier B.V.  
2011年1月 Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement:
Comparison Study with UV-Raman Measurement and Edge Force Model Calculation
Jap. J. App. Phys., 50, 010111(1-8) (2011)  Motohiro Tomita Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, and Atsushi Ogura The Japan Society of Applied Physics  
2011年2月 Evaluation of Strained Silicon by Electron Back Scattering Pattern
Compared with Raman Measurement and Edge Force Model Calculation
Key Engineering Materials 470、123-128 (2011) Motohiro Tomita Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu and Atsushi Ogura Trans Tech Publications, Switzerland  
2011年4月 Material Research on High-Quality Passivation Layers with Controlled Fixed Charge
for Crystalline Silicon Solar Cells
Jpn. J. Appl. Phys. 50, 04DP09 (2011)  Tomihisa Tachibana, Takashi Sameshima, Yuta Iwashita, Yuji Kiyota, Toyohiro Chikyow, Haruhiko Yoshida, Koji Arafune, Shin-ichi Satoh, and Atsushi Ogura The Japan Society of Applied Physics  
2011年4月 Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An nþ-Polycrystalline Silicon Capping Layer and Its Application to 20nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Jpn. J. Appl. Phys., 50, 04DC14(1-5) (2011)  Takahiro Kamei Yongxun Liu, Kazuhiko Endo, Shinichi O’uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Takashi Matsukawa, Kunihiro Sakamoto, Atsushi Ogura, and Meishoku Masahara1 The Japan Society of Applied Physics  
2011年4月 Quantitative Analysis of Stress Relaxation in Transmission Electron Microscopy Samples by Raman Spectroscopy with a High-Numerical Aperture Lens Jpn. J. Appl. Phys. 50, 04DA06(1-5) (2011). D. Kosemura A. Ogura The Japan Society of Applied Physics  
2011年6月 Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition Jpn. J. Appl. Phys. 50, 061301(1-5) (2011) Munehisa Takei Daisuke Kosemura, Hiroaki Akamatsu, Kohki Nagata, and Atsushi Ogura The Japan Society of Applied Physics  
2011年6月 Combinatorial Investigation of ZrO2-Based Dielectric Materials
for Dynamic Random-Access Memory Capacitors
Jpn. J. Appl. Phys. 50, 06GH12(1-4) (2011) Yuji Kiyota Kenji Itaka, Yuta Iwashita, Tetsuya Adachi, Toyohiro Chikyow, and Atsushi Ogura The Japan Society of Applied Physics  
2011年10月 Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells Applied Physics Express 4, 115601(1-3)  (2011) Hiroki Kusunoki Takahide Ishizuka, Atsushi Ogura, and Haruhiko Ono1 The Japan Society of Applied Physics