学術論文 08～09年					2011/4/11 更新

発行年月	タイトル	掲載紙名	第一著者	共著者	発行所	備考
2008年2月	Evaluation of strain in Si-on-insulator substrate induced by Si₃N₄ capping film	Jpn. J. Appl. Phys., 47, pp.1465-1468(2008).	Atsushi Ogura,	Daisuke Kosemura, Yasuto Kakemura, Tetsuya Yoshida, Hidetsugu Uchida, Nobuyoshi Hattori, and Masaki Yoshimaru	The Institute of Pure and Applied Physics
2008年2月	Evaluation of poly-Si thin film crystallized by solid green laser annealing using UV/visible Raman spectroscopy	Journal of Materials Science: Materials in Electronics, 19, pp.S122-S126 (2008).	Atsushi Ogura	Yasuto Kakemura, Daisuke Kosemura, Tetsuya Yoshida, Miyuki Msaki, Kenichirou Nishida, Ryusuke Kawakami and Naoya Yamamoto	Springer
2008年2月	Microscopic and Spectroscopic Mapping of Dislocation-Related　Photoluminescence in Multicrystalline Silicon Wafers	Journal of Materials Science: Materials in Electronics, 19, pp.S132-134 (2008).	Masaaki Inoue	Hiroki Sugimoto, Michio Tajima, Yoshio Ohshita and Atsushi Ogura	Springer	ISSBN:0921-5107
2008年2月	Characterization of strained Si wafers by X-ray diffraction techniques	Journal of Materials Science: Materials in Electronics, 19, pp.S189-S193 (2008).	Takayoshi Shimura	Kohta Kawamura, Masahiro Asakawa, Heiji Watanabe, Kiyoshi Yasutake, Atsushi Ogura, Kazunori Fukuda,　Osami Sakata, Shigeru Kimura, Hiroki Edo, Satoshi Iida, Masataka Umeno	Springer	ISSBN:0921-5107
2008年5月	Evaluation and Control of Strain in Si Induced by Patterned SiN Stressor	ECS Transactions, 13 (2) 263-269 (2008)	Hiroyuki Saitoh	Daisuke Kosemura, Yasuto Kakemura, Tetsuya Yoshida, Munehisa Takei, and Atsushi Ogura	The Electrochemical Society
2008年5月	Transconductance Enhancement by Utilizing Pattern Dependent Oxidation in Silicon Nanowire Field-Effect Transistors	ECS Transactions, 13 (1) 351-358 (2008)	Aya Seike	Ikushin Tsuchida, Yuuki Sugiura, Daisuke Kosemura, Atsushi Ogura, Takanobu Watanabe, and Iwao Ohdomari	The Electrochemical Society
2008年5月	Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography	ECS Transactions, 13 (2) 75-82 (2008)	Takayoshi Shimura	Tomoyuki Inoue, Yuki Okamoto, Takuji Hosoi, Hiroki Edo, Satoshi Iida, Atsushi Ogura, and Heiji Watanabe	The Electrochemical Society
2008年5月	Chemical Vapor Deposition Pt-Ni alloy Using Pt(PF3)4 and Ni(PF3)4	ECS Transactions, 13 (1) 433-439 (2008)	Masato Ishikawa,	Ikuyo Muramoto, Hideaki Machida, Satoshi Imai, Atsushi Ogura, and Yoshio Ohshita	The Electrochemical Society
2008年6月	Characterization of Strain for High-Performance Metal-Oxide-Semiconductor Field-Effect-Transistor	Jpn. J. Appl. Phys., 47, pp.2538-2543(2008).	Daisuke Kosemura	Yasuto Kakemura, Tetsuya Yoshida, Atsushi Ogura, Masayuki Kohno, Tatsuo Nishita and Toshio Nakanishi	The Institute of Pure and Applied Physics
2008年6月	Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics	Jpn. J. Appl. Phys., 47, pp.2433-2437(2008).	Yongxun Liu	Tetsuro Hayashida, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shinich O'uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, and Eiichi Suzuki	The Institute of Pure and Applied Physics
2008年6月	W chemical-vapor deposition using (i-C₃H₇C₅H₄)₂WH₂	J. Vacume Science & Tech. , 26, pp561.-564 (2008).	A. Ogura	S. Imai, T. Kagawa, H. Kurozaki, M. Ishikawa, I. Muramoto, H. Machida, and Y. Ohshita	Elsevier B.V.	Seleted paper for Virtual Journal of Nanoscale Science & Technology -- June 23, 2008
2008年7月	Evaluation of Si3N4/Si interface by UV Raman spectroscopy	Applied Surface Science, 254,pp.6229-6231	A. Ogura	T. Yoshida, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S. Sugawa, A. Teramoto, T. Ohmi, T. Hattori	Elsevier B.V.
2008年10月	Evaluation and Control of Strain in Si Induced by Patterned SiN Stressor	ECS Transactions, 16 (10) 539-543 (2008)	Takayoshi Shimura	T. Inoue, Y. Okamoto, Takuji Hosoi, Atsushi Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida, and H. Watanabe
2008年10月	Study on Stress Memorization by Argon Implantation and Annealing	ECS Transactions, 16 (10) 117-124 (2008)	Masafumi Hino		The Electrochemical Society
2008年12月	Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate	Solid State Electronics, 52, pp.1845-1848 (2008)	A. Ogura	T. Yoshida, D. Kosemura, Y. Kakemura, M. Takei, H. Saito, T. Shimura, T. Koganesawa, and I. Hirosaw	Elsevier B.V.
2009年1月	Evaluation and control of strain in Si induced by patterned SiN stressor	Electrochem. Solid-State Lett., 12, Issue 4, pp. H117-H119 (2009).	A. Ogura	H. Saitoh, D. Kosemura, Y. Kakemura, T. Yoshida, and M. Takei, T. Koganezawa and, I. Hirosawa	The Electrochemical Society, Inc.
2009年5月	Evaluation of local strain in Si using UV-Raman spectroscopy	Materials Science and Engineering B, 159–160 pp.206–211 (2009)	Atsushi Ogura	Daisuke Kosemura, Munehisa Takei, Hidetsugu Uchida, Nobuyoshi Hattori, and Masaki Yoshimaru_,Satoru Mayuzumi, and Hitoshi Wakabayashi	Elsevier B.V.
2009年5月	A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors	Jpn. J. Appl. Phys., 48, 05DC01 (6 pages) (2009).	Tetsuro Hayashida	Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinich O’uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Eiichi Suzuki, Atsushi Ogura, and Meishoku Masahara	The Institute of Pure and Applied Physics
2009年5月	Improvement of CVD SiO2 by Post Deposition Microwave Plasma Treatment	ECS Transactions, 19 (2) 55-66 (2009)	Kohki Nagata	H. Akamatsu, D. Kosemura, T. Yoshida, M. Takei, M. Hattori, A. Ogura, T. Koganezawa, M. Machida, J. Son, I. Hirosawa, T. Shiozawa, D. Katayama, Y. Sato and Y. Hirota	The Electrochemical Society
2009年5月	UV-Raman Spectroscopy Study on SiO2/Si Interface	ECS Transactions, 19 (9) 45-51 (2009)	Maki Hattori	Tetsuya Yoshida, Daisuke Kosemura, Atsushi Ogura, Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, and Tadahiro Ohmi	The Electrochemical Society
2009年6月	Study of Strain Induction for Metal–Oxide–Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners	Jpn. J. Appl. Phys., 48, 066508(7pages) (2009).	Daisuke Kosemura	Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Masayuki Kohno, Tatsuo Nishita, Toshio Nakanishi, and Atsushi Ogura	The Institute of Pure and Applied Physics
2009年11月	Channel-Stress Enhancement for Scaled pMOSFETs by using Damascene Gate with Top-Cut Compressive Stress Liner and eSiGe	IEEE Trans. Electron Devices, vol. 56, pp. 2778, Nov. 2009.	Satoru Mayuzumi	Shinya Yamakawa, Daisuke Kosemura, Munehisa Takei, Yasushi Tateshita, Hitoshi Wakabayashi, Member, IEEE, Masanori Tsukamoto, Terukazu Ohno, Atsushi Ogura and Naoki Nagashima	IEEE
2009年12月	Study on the Degradation of p-n Diode Characteristics Caused by Small Angle Grain Boundary in Multi-Crystalline Silicon Substrate for Solar Cells	Jpn. J. Appl. Phys., 48, 121202 (2009).	Tomihisa Tachibana	Keita Imai, Junichi Masuda, Atsushi Ogura, Yoshio Ohshita, Koji Arafune, Michio Tajima	The Institute of Pure and Applied Physics