| 学術論文 04〜07年 | 2011/4/11 更新 | |||||
| 発行年月 | タイトル | 掲載紙名 | 第一著者 | 共著者 | 発行所 | 備考 |
| 2004年2月 | Comparison of SOI Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime | Jpn. J. Appl. Phys., Vol.43(2), pp.432-438 | M. Tajima | Z.Q. Li, S. Sumie, H. Hashizume and A. Ogura | The Institute of Pure and Applied Physics | |
| 2004年4月 | Characterization of Si/SiGe structures by micro-Raman imaging | Appl. Phys. Lett. Vol.84, pp.2533-2535 | S. Nakashima | T. Yamamoto, A. Ogura, K. Uejima, and T. Yamamoto | American Institute of Physics | |
| 2004年4月 | Characterization of metal-oxide-semiconductor structures using HfSiOx gate-dielectric by means of monoenergetic positron beams | Jpn. J. Appl. Phys. Vol.43, pp.1254-1259 | A. Uedono | N. Hattori, A. Ogura, J. Kudo, T. Nishikawa, T. Ohdaira, R. Suzuki, and T. Mikado | The Institute of Pure and Applied Physics | |
| 2005年2月 | Ni Thin Film Deposition from Tetrakistrifluorophosphine-nickel | Jpn. J. Appl. Phys. Vol.44 pp.L318-L320 | Y. Ohshita | M. Ishikawa, T. Kada, H. Machida, and A. Ogura | The Institute of Pure and Applied Physics | |
| 2005年2月 | Volatile CVD precursor for Ni film: cyclopentadienylallylnickel | J. Crystal Growth, Vol.275, pp. e1115-1119 | T. Kada | M. Ishikawa, H. Machida, A. Ogura, and Y. Ohshita | Elsevier B.V. | |
| 2005年2月 | Surface reactions in Ni MOCVD using cyclopentadienylallylnickel as a precursor | J. Crystal Growth, Vol.275, pp. e1121-1125 | M. Ishikawa | T. Kada, H. Machida, A. Ogura, and Y. Ohshita | Elsevier B.V. | |
| 2005年5月 | Evaluation of commercial ultra-thin Si-on-insulator wafers using laser confocal inspection system | Thin Solid Films, Vol 488/1-2, pp 189-193 | A. Ogura | O Okabayashi | Elsevier B.V. | |
| 2006年4月 | UV-Raman Spectroscopy System for Local and Global Strain Measurements in Si | Jpn. J. Appl. Phys., Vol.45(4B), pp.3007-3011 (2006) | A. Ogura | Kosuke Yamasaki, Daisuke Kosemura, Satoshi Tanaka, Ichiro Chiba and Ryosuke Shimidzu | The Institute of Pure and Applied Physics | |
| 2006年2月 | HfO2 and Hf1-xSixO2 Thin Film Growth by Metal Organic CVD Using Tetrakis(diethlyamido)hafnium | Chemical Vapor Deposition、Vol.12, pp.130-135 (2006) | Y. Ohshita | A. Ogura, M. Ishikawa, T. Kada, A. Hoshino, T. Suzuki, S. Hiiro and H. Machida | Wiley-VCH | |
| 2006年6月 | Analysis of Intra-Grain Defects in Multicrystalline Silicon Wafers by Photoluminescence Mapping and Spectroscopy | J. Appl. Phys., 45, pp. L641-643 (2006) | H. Sugimoto | M. Inoue, M. Tajima, A. Ogura and Y. Ohshita | The Institute of Pure and Applied Physics | |
| 2006年10月 | Depth profiling of strain and defects in Si/Si1-xGex/Si heterostructures by micro-Raman imaging | J. Appl. Phys., 100, pp.073511-1-5 (2006) | T. Mitani | S. Nakashima, H. Okumura, A. Ogura | American Institute of Physics | |
| 2006年10月 | Crystallinity Estimation for Thin Silicon-on-insulator Layers by Means of Diffractometry Using a Highly Parallel X-ray Microbeam | Journal of synchrotron radiation, 13, pp.373-377(2006). | S. Takeda | K. Yokoyama, Y. Tsusaka, Y. Kagoshima, J Matsui, and A. Ogura | International Union of Crystallography | |
| 2006年11月 | Two-Dimensionally Anisotropic Lattice Deformation Observed in a Commercially Available Strained-Si Wafer. | Jpn. J. Appl. Phys., 45, pp. 8542-8548 (2006) | K. Fukuda | N. Tomita, K. Hayashi, Y. Tsusaka, Y. Kagoshima, J. Matsui, A. Ogura | The Institute of Pure and Applied Physics | |
| 2007年2月 | Composition control of Ni-silicide by Chemical Vapor Deposition using Ni(PF3)4 and Si3H8 | Jpn. J. Appl. Phys., 46, pp.474-477 (2007). | M. Ishikawa | I. Muramoto, H. Machida, Y. Ohshita, S. Imai, and A. Ogura | The Institute of Pure and Applied Physics | |
| 2006年11月 | Ni-silicide precursor for gate electrodes | Thin Solid Films, 515, pp.4980-4982 (2007) | M. Ishikawa | I. Muramoto, H. Machida, S. Imai, A. Ogura, Y. Ohshita | Elsevier B.V. | |
| 2007年2月 | Measurement of in-plane and depth strain profiles in strained-Si substrates | Solid State Electronics, 55, pp.219-225 (2007) | A. Ogura | D. Kosemura, K. Yamasaki, S. Tanaka, A. Kitano and I. Hirosawa | Elsevier B.V. | |
| 2007年2月 | Chemical Vapor Deposition of NiSi using Ni(PF3)4 and Si3H8 | Thin Solid Films, 515, pp.8246-8249 (2007) | M. Ishikawa | I. Muramoto, H. Machida, S. Imai, A. Ogura, Y. Ohshita | Elsevier B.V. | |
| 2007年5月 | Effective Control of Strain in SOI by SiN Deposition | ECS Transactions, 6 (4) 245-250 (2007) | Daisuke Kosemura | Atsushi Ogura, Kosuke Yamasaki, Yasuto Kakemura, and Tetsuya Yoshida | The Electrochemical Society | |
| 2007年8月 | Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation | Appl. Phys. Lett., 91, 062108-1-3 (2007) | A. Seike | T. Tange, I. Sano, Y. Sugiura, I. Ohdomari, D. Kosemura and A. Ogura | American Institute of Physics | Selected paper for Virtual Journal of Nanoscale Science & Technology |
| 2007年11月 | Strain-induced Transconductance Enhancement by Pattern Dependent Oxidation in Silicon Nanowire Field-Effect Transistors | Appl. Phys. Lett., 91, 202117-1-3 (2007) | A. Seike | T. Tange, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura, and I. Ohdomari |
American Institute of Physics | |
| 2007年11月 | Improvement in Characteristics of Thin Film Transistors upon High-pressure Steam Annealing | Jpn. J. Appl. Phys. 46, pp. 7208–7211(2007) | N. Yamamoto | T. Watanabe, M. Masaki, R. Kawakami, T. MurayamaY. Ohshita, A. Ogura, A. Yoshinouchi, | The Institute of Pure and Applied Physics | |
| 2007年12月 | Orientation dependence of silicon oxidation ratio in high-pressure water vapor | Jpn. J. Appl. Phys. 46, pp. 7619–7621(2007) | Naoya Yamamoto | Yoshio Oshita, Atsushi Ogura and Atsushi Yoshinouchi | The Institute of Pure and Applied Physics | |