学術論文 00〜03年					2011/4/11 更新
発行年月	タイトル	掲載紙名	第一著者	共著者	発行所	備考
2000年6月	Evaluation of buried oxide formation in low-dose SIMOX process	Appl. Surf. Sci., Vol.159-160, pp.104-110	A. Ogura	H. Ono	Elsevier B.V.
2000年2月	Annealing Properties of Defects During Si-on-Insulator Fabrication by Low-Dose Oxygen Implantation Studied by Monoenergetic Positron Beams	J. Appl. Phys., Vol.87,  pp.1659-1665	A. Uedono	S. Tanigawa, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, and T. Mikado	American Institute of Physics
2000年6月	In-diffusion and out-diffusion of oxygen during the buried oxide formation in oxygen-implanted silicon	J. Appl. Phys., Vol.87, pp.7782-7787	H. Ono	A. Ogura	American Institute of Physics
2000年7月	Microstructure of Cu Film Sputter-Deposited on TiN	J. Vac. Sci. & Tech. A, Vol.18(6), pp.2854-2857	A. Furuya	Y. Ohshita and A. Ogura	American Vacuum Society
2000年12月	Low-pressure chemical vapor deposition of TaCN films by pyrolysis of ethylamido-tantalum	J. Cryst. Growth Vol.220, pp.604-609	Y. Ohshita	A. Ogura, A. Hoshino, S. Hiiro, and H. Machida	Elsevier B.V.
2001年3月	Evaluation of SOI Substrates by Positron Annihilation	Jpn. J. Appl. Phys. Vol.40, pp.2903-2906	A. Uedono	A. Ogura, and S. Tanigawa	The Institute of Pure and Applied Physics
2001年7月	Depth profile of As and B implanted into Si-on-insulator substrates	Thin Solid Films, Vol.397, pp.56-62	A. Ogura	M. Hiroi	Elsevier B.V.
2001年10月	Formation of Buried Oxide Layer in Si Substrates by Oxygen precipitation at Implantation Damage of Light Ions	Jpn. J. Appl. Phys. Vol.40, pp.L1075-1077	A. Ogura		The Institute of Pure and Applied Physics
2001年6月	Photoluminescence Analysis of {311} Interstitial Defects in Wafers Synthesized by Separation by Implanted Oxygen	Jpn. J. Appl. Phys. Vol.40, pp.L567-569	J. Takiguchi	M. Tajima, A. Ogura, S. Ibuka, and Y. Tokumaru	The Institute of Pure and Applied Physics
2001年11月	HfO2 growth by low-pressure chemical vapor deposition using the Hf (N (C2H5) 2) 4　/O2 gas system	J. Crystal Growth, Vol.233,  pp.292-297	Y. Ohshita	A. Ogura, A. Hoshino, S. Hiiro, and H. Machida	Elsevier B.V.
2001年12月	Oxygen-Related Defects in Low-Dose Separation-by-Implanted Oxygen (SIMOX) Wafers Probed by Monoenergetic Positron Beams	J. Appl. Phys., Vol.90, pp.6026-6031	A. Uedono	Z. Q. Chen, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, and T. Mikado	American Institute of Physics
2002年2月	Effects of deposition conditions on step coverage quality in low-pressure chemical vapor deposition of HfO2	J. Crystal Growth, Vol.235, pp.365-370	Y. Ohshita	A. Ogura, A. Hoshino, T. Suzuki, and H. Machida	Elsevier B.V.
2002年3月	Formation of Epitaxially Ordered SiO2 in Oxygen-implanted Silicon during Thermal Annealing	J. Cryst. Growth, Vol.236, pp.37-40	T. Shimura	T. Hosoi, K. Fukuda, M. Umeno, and A. Ogura	Elsevier B.V.
2002年5月	Defects in silicon-on-insulator wafers and their hydrogen interaction studied by monoenergetic positron beams	J. Appl. Phys., Vol.91, pp.6488-6492	A. Uedono	Z. Q. Chen, A. Ogura, R. Suzuki, T. Ohdaira, and T. Mikado	American Institute of Physics
2002年3月	Using tetrakis-diethylamido-hafnium for HfO2-thin-film growth in low-pressure chemical-vapor deposition	Thin Solid Films., Vol.406, pp.215-218	Y. Ohshita	A. Ogura, A. Hoshino, S. Hiiro, T.Suzuki, and H. Machida	Elsevier B.V.
2002年5月	Hf1-xSixO2 deposition by metal organic chemical vapor deposition using the Hf(NEt2)4/SiH(NEt2)3/O2 gas system	Thin Solid Films, Vol.416, pp.208-211	Y. Ohshita	A. Ogura, M. Ishikawa, A. Hoshino, S. Hiiro, T. Suzuki, and H. Machida	Elsevier B.V.
2001年7月	MOCVD precursors for Ta and Hf compound films	J. Cryst. Growth, Vol.237-239, pp.586-590	H. Machida	A. Hoshino, T. Suzuki, A. Ogura, and Y. Ohshita	Elsevier B.V.
2003年6月	Formation of Partterned Buried Insulating Layer in Si Substrates by He+ implantation and Annealing in Oxidation Atmosphere	Appl. Phys. Lett. Vol.82, pp.4480-4482	A. Ogura		American Institute of Physics
2003年5月	Evaluation of HfO2 film structures deposited by MOCVD using Hf(N(C2H5)2)4/O2 gas system	Thin Solid Films, Vol.441, pp.161-164	A. Ogura	Y. Ohshita, A. Hoshino, and H. Machida	Elsevier B.V.
2003年6月	Tris-diethylamino-silane decomposition due to tetrakis-diethylamido-hafnium in Hf1-xSixO2 chemical vapor deposition	Jpn. J.Appl. Phys., Vol.42, pp.L578-580	Y. Ohshita	A. Ogura, T. Kada, and H. Machida	The Institute of Pure and Applied Physics