国際会議　18年〜19年					2020/4/21 更新
発行年月	タイトル	第一著者	共著者	会議名	開催場所	備考
2018年1月15日	Influence of Al2O3/In0.76Si0.24O0.99C0.01 Interface on Reliability for Oxide Thin Film Transistor	Kazunori Kurishima	T. Nabatame, T. Onaya, T. Kizu, K. Tsukagoshi, A. Ohi, N. Ikeda, T. Chikyow, A. Ogura	45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45)	Kona，HI
2018年1月15日	Evaluation of Strain in the Oxide Covered Silicon Nanowires for Thermoelectric Devices by Raman Spectroscopy	Ryo Yokogawa	S. Hashimoto, M. Tomita, T. Watanabe, A. Ogura	45th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-45)	Kona，HI
2018年3月12日	Chip-Level-Integrated nMISFETs with Sputtered-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate	Kentaro Matsuura,	Jun’ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara1, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura1 and Hitoshi Wakabayashi	2nd Electron Devices Technology and Manufacturing (EDTM) Conference 2018	Kobe, Japan
2018年3月14日	PRESENT STATUS AND FUTURE OF R&D FOR CRYSTALLINE SILICON SOLAR CELLS	Yoshio Ohshita	Atsushi Ogura	Global Photovoltaic Conference 2018	Gwangju, Korea
2018年3月20日	100μm Thin n-Type Bifacial PERT Cell Using 200μm Pitch Diamond Multi-Wire Slice Wafer	Yoshio Ohshita	Atsushi Ogura	8th International Conference on Silicon Photovoltaics, and the nPV Workshop	Lauzsanne, Switzerland
2018年3月20日	3D scaling of Si-IGBT	H. Iwai	K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura and H. Ohash	Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon	Granada, Spain
2018年6月11日	Machine Learning for Automated Etch Pit Counting on As-sliced Surface of Multicrystalline Silicon	Takuto Kojima	Kohei Onishi, Atsushi Ogura, Kenji Fukui, Manabu Komoda, Junichi Atobe	7th World Conference on Photovoltaic Energy Conversion	Waikoloa, HI
2018年6月11日	Evaluation of lifetime degradation caused by oxygen precipitation combined with metal contamination in Cz-Si for solar cells	Kouhei Onishi	Takuto Kojima, Kousuke Kinoshita, Yoshio Oshita, Atsushi Ogura	7th World Conference on Photovoltaic Energy Conversion	Waikoloa, HI
2018年6月13日	Effect of ITO Capping Layer on Interface Workfunction of MoOx in ITO/MoOx/SiO2/Si Contacts	Takefumi Kamioka	Yutaka Hayashi, Yuki Isogai, Kyotaro Nakamura, Yoshio Ohshita, Atsushi Ogura	7th World Conference on Photovoltaic Energy Conversion	Waikoloa, HI
2018年6月13日	Potential of Chemical Rounding for the Performance Enhancement of a Monolithic Perovskite/Bifacial N-PERT Si Tandem Cell	Hyunju Lee	, Inseol Song, Sang-Won Lee, Soo Hyun Bae, Ji Yeon Hyun, Yoonmook Kang, Haeseok Lee, Donghwan Kim, Atsushi Ogura, Yoshio Ohshita	7th World Conference on Photovoltaic Energy Conversion	Waikoloa, HI
2018年6月13日	Evaluation of ITO/a-Si properties by hard X-ray photoemission spectroscopy	Tappei Nishihara	Takuya Hiyama, Takuto Kojima, Hideki Matsumura, Takefumi Kamioka, Yoshio Ohshita, Satoshi Yasuno, Ichiro Hirosawa, Atsushi Ogura	7th World Conference on Photovoltaic Energy Conversion	Waikoloa, HI
2018年6月13日	Influence of Additives in the Electrode Paste for Crystalline Si Solar Cells on Potential-Induced Degradation	Sachiko Jonai	Aki Tanaka, Kazuo Muramatsu, Kyotaro Nakamura, Atsushi Ogura, Yoshio Ohshita, Atsushi Masuda	7th World Conference on Photovoltaic Energy Conversion	Waikoloa, HI
2018年6月20日	New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment	K. Kakushima	T. Hoshii, M. Watanabe, N. Shigyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, and H. Iwai	2018 Symposia on VLSI Technology and Circuits	Honolulu, HI
2018年7月31日	Effect of ZrO2 Capping-layer on Ferroelectricity of HfxZr1−xO2 Thin Films by ALD using Hf/Zr Cocktail Precursor	Takashi Onaya	T. Nabatame, N. Sawamoto,  A. Ohi, N. Ikeda, T. Chikyow,  and A. Ogura,	AVS 18th International Conference on Atomic Layer Deposition	Incheon, South Korea
2018年8月13日	Suppression of Oxygen Precipitation and Dislocation Formation by Controlling Thermal History for Cz-Si Crystal Growth	Kosuke Kinoshita	Takuto Kojima, Kohei Onishi, Yoshio Ohshita, and Atushi Ogura	28th Workshop on Crystalline Silicon Sola Cells & Modules: Materiafs and Processes	Winter Park, CO
2018年8月14日	Quantification Low-level Carbon in Silicon Crystals by Room-Temperature Photoluminescence after Electron Irradiation	Yoichiro Ishikawa	Michio Tajima, and Atsushi Ogura	28th Workshop on Crystalline Silicon Sola Cells & Modules: Materiafs and Processes	Winter Park, CO
2018年8月14日	Lifetime  Degradation Caused by Oxygen Precipitation Combined with Metal Contamination in Cz-Si for Solar Cells	Kohei Onishi	Kosuke Kinoshita, Takuto Kojima, Yoshio Ohshita, and Atsushi Ogura	28th Workshop on Crystalline Silicon Sola Cells & Modufes: Materiafs and Processes	Winter Park, CO
2018年9月12日	Quantitative Analysis of Low-level Carbon in Si Using Room-Temperature Photoluminescence after Electron Irradiation	Yoichiro Ishikawa	Michio Tajima, and Atsushi Ogura	2018 International Conference on Solid State Devices and Materials	Tokyo, Japan
2018年9月12日	Effects of Crystal Growth Conditions of n-type Cz-Si for Solar cells on Oxygen Precipitation and Dislocation Formation through Annealing Process	Kosuke Kinoshita	Takuto Kojima, Kohei Onishi, Yoshio Ohshita, and Atushi Ogura	2018 International Conference on Solid State Devices and Materials	Tokyo, Japan
2018年9月12日	Effects of Metal Contamination with Oxygen Precipitates on Lifetime Degradation in Cz-Si for Solar Cells	Kohei Onishi	Takuto Kojima, Kosuke Kinoshita, Yoshio Ohshita, and Atsushi Ogura	2018 International Conference on Solid State Devices and Materials	Tokyo, Japan
2018年9月12日	Evaluations of Minority Carrier Lifetime in FZ-Si Affected by Si-IGBT Processes	H. Kobayashi	R. Yokogawa, K. Kinoshita, Y. Numasawa, A. Ogura, S. Nishizawa, T. Saraya, K. Ito, T. Takakura, S. Suzuki, M. Fukui, K. Takeuchi, and T. Hiramoto	2018 International Conference on Solid State Devices and Materials	Tokyo, Japan
2018年9月13日	Impact of Top-ZrO2 Nucleation Layer on Ferroelectricity of HfxZr1-xO2 Thin Films for　Ferroelectric Field Effect Transistor Application	Takashi Onay	Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda,　 Takahiro Nagata, and Atsushi Ogura	2018 International Conference on Solid State Devices and Materials	Tokyo, Japan
2018年9月13日	Crystal Growth of MnS buffer layer for non-polar AlN on Si (100) deposited by RF-magnetron sputtering	Kouta Tatejima	Takahiro Nagata, Keiji Ishibashi, Kenichiro Takahashi, Setsu Suzuki, Atsushi Ogura, and Toyohiro Chikyow	2018 International Conference on Solid State Devices and Materials	Tokyo, Japan
2018年9月24日	Potential of Chemical Rounding for the Performance Enhancement of a Pyramid- Textured Bifacial Si Bottom Cell	H. Lee	Y. Ohshita, I. Song, S.W. Lee, S.H. Bae, J.Y. Hyun, Y. Kang, H. Lee, D. Kim, and A. Ogura	35th European PV Solar Energy Conference and Exibition	Brussels, Belgium
2018年9月27日	Image Recognition of Etch Pits on As-Sliced Surface of Multicrystalline Silicon Using Machine Learning	T. Kojima,	K. Onishi, and A. Ogura	35th European PV Solar Energy Conference and Exibition	Brussels, Belgium
2018年9月30日	Strain Evaluation of Laser-Annealed SiGe Thin Layers	S. Komago	T. Murakami, K. Yoshioka, R. Yokogawa, A. Ogura, J. O. Borland, T. Kuroi, T. Tabata, K. Huet, and N. Horiguchi	The 234th Meeting of The Electrochemical Society (ECS), the XXXIII Congreso de la Sociedad Mexicana de Electroquimica (SMEQ), and the 11th Meeting of the Mexico Section of the Electrochemical Society	Cancun, Mexico
2018年10月1日	Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated Using TiN Stressor and ZrO2　Nucleation Techniques	T. Onaya	T. Nabatame, N. Sawamoto, K. Kurishima, A. Ohi, N. Ikeda, T. Nagata, and A. Ogura	the 234th Meeting of The Electrochemical Society (ECS), the XXXIII Congreso de la Sociedad Mexicana de Electroquimica (SMEQ), and the 11th Meeting of the Mexico Section of the Electrochemical Society	Cancun, Mexico
2018年10月2日	Evaluation of Laterally Graded Silicon Germanium Wires for Thermoelectric Devices Fabricated by Rapid Melting Growth	R. Yokogawa	S. Hashimoto, K. Takahashi, S. Oba, M. Tomita, M. Kurosawa, T. Watanabe, and A. Ogura	the 234th Meeting of The Electrochemical Society (ECS), the XXXIII Congreso de la Sociedad Mexicana de Electroquimica (SMEQ), and the 11th Meeting of the Mexico Section of the Electrochemical Society	Cancun, Mexico
2018年10月2日	Reliability of Al2O3/In-Si-O-C thin-film transistors with an Al2O3  passivation layer under negative gate-bias stress	K. Kurishima	T. Nabatame, T. Onaya, K. Tsukagoshi, A. Ohi, N. Ikeda, T. Nagata, and A. Ogura	the 234th Meeting of The Electrochemical Society (ECS), the XXXIII Congreso de la Sociedad Mexicana de Electroquimica (SMEQ), and the 11th Meeting of the Mexico Section of the Electrochemical Society	Cancun, Mexico
2018年10月3日	Evaluation of Anisotropic Three-Dimensional Strain Relaxation in Stripe-Shaped Ge1-xSnx Mesa Structure	Y. Takahashi	R. Yokogawa, T. Murakami, I. Hirosawa, K. Suda, and A. Ogura	the 234th Meeting of The Electrochemical Society (ECS), the XXXIII Congreso de la Sociedad Mexicana de Electroquimica (SMEQ), and the 11th Meeting of the Mexico Section of the Electrochemical Society	Cancun, Mexico
2018年10月4日	High-Sn Concentration MOCVD-Grown Strained GeSn Thin Films Evaluated Using HAXPES and XRD Base on Synchrotron Technique	K. Usuda	M. Yoshiki , K. Suda, A. Ogura, and M. Tomita	the 234th Meeting of The Electrochemical Society (ECS), the XXXIII Congreso de la Sociedad Mexicana de Electroquimica (SMEQ), and the 11th Meeting of the Mexico Section of the Electrochemical Society	Cancun, Mexico
2018年10月4日	Determination of Phonon Deformation Potentials in Carbon-doped Silicon	K. Yoshioka	R. Yokogawa, T. Murakami, S. Komago, N. Sawamoto, and A. Ogura	the 234th Meeting of The Electrochemical Society (ECS), the XXXIII Congreso de la Sociedad Mexicana de Electroquimica (SMEQ), and the 11th Meeting of the Mexico Section of the Electrochemical Society	Cancun, Mexico
2018年11月15日	Evaluation of MoS2 Film Fabricated by DC Bias Sputtering Method with Raman Spectroscopy	Y. Oyanagi	S. Ishihara, Y. Hibino, N. Sawamoto, T. Ohashi, K. Matsuura, H. Wakabayashi, and A. Ogura	31st International Microprocesses and Nanotechnology Conference	Ssappro, Japan
2018年11月16日	Evaluation of Thermal Conductivity Characteristics in Si Nanowire Covered with Oxide by UV Raman Spectroscopy	R. Yokogawa	M. Tomita, T. Watanabe, and A. Ogura	31st International Microprocesses and Nanotechnology Conference	Ssappro, Japan
2018年11月16日	Effect of Substrate Self-Bias and Nitrogen Flow Rate on Non-Polar AIN Film Growth by Reactive Sputtering	K. Tatejima	T. Nagata, K. Ishibashi, K. Takahashi, S. Suzuki, A. Ogura, and T. Chikyow	31st International Microprocesses and Nanotechnology Conference	Ssappro, Japan
2018年11月19日	Error Factors in Carbon Quantitative Analysis in Si using Room-Temperature Photoluminescence after Electron Irradiation	Yoichiro Ishikawa	Michio Tajima, and Atsushi Ogura	The Forum on the Science and Technology of Silicon Materials 2018	Okayama, Japan
2018年11月19日	Minority carrier lifetime degradation in FZ-Si by advanced Si-IGBT processes	H. Kobayashi	R. Yokogawa, K. Kinoshita, Y. Numasawa, A. Ogura, S. Nishizawa, T. Saraya, K. Ito, T. Takakura, S. Suzuki, M. Fukui, K. Takeuchi,  and T. Hiramoto	The Forum on the Science and Technology of Silicon Materials 2018	Okayama, Japan
2018年11月19日	Characterization of electrical properties in carrier selective contact solar cells	Yoshio Ohshita	Takefumi Kamioka, Lee Hyunju, Yutaka Hayashi, Kyotaro Nakamura, and Atsushi Ogura	The Forum on the Science and Technology of Silicon Materials 2018	Okayama, Japan
2018年11月21日	Research on crystalline Si solar cells by universities in Japan under NEDO support	A. Ogura	Y. Ohshita	The Forum on the Science and Technology of Silicon Materials 2018	Okayama, Japan
2018年12月3日	Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss,	T. Saraya	K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohashi, and T. Hiramoto	2018 IEEE International Electron Devices Meeting	San Francisco, CA
2019年3月5日	Non-polar AlN growth on Si (100) substrate with MnS buffer layer deposited by sputtering	K. Tatejima	T. Nagata, K. Ishibashi, K. Takahashi, S. Suzuki, A. Ogura, and T. Chikyow	12th MANA International Symposium	Tsukuba, Japan
2019年3月13日	Suppression of threshold voltage shift on In-Si-O-C Thin-Film Transistor with an Al2O3 Passivation Layer under Negative and Positive Gate-Bias Stress	Kazunori Kurishima	Toshihide Nabatame, Takashi Onaya, Kazuhito Tsukagoshi, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, and Atsushi Ogura	2019 IEEE Electron Devices Technology and Manufacturing Conference	Singapore
2019年3月13日	Defect Formation by Indium-tin Oxide Reactive Plasma Deposition	Yoshio Ohshita	Yuki Isogai, Lee Hyunju, Tomohiko Hara, Takefumi Kamioka, and Atsushi Ogura	Global Photovoltaic Conference 2019	Gwangju, Korea	Ivited
2019年3月14日	Fabrication of MoS2(1-x)Te2x via Sulfurization using (t-C4H9)2S2 and its Physical Structure Evaluation	Yusuke Hibino	Seiya Ishihara, Yuya Oyanagi, Kota Yamazaki, Yusuke Hashimoto, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Hitoshi Wakabayashi, and Atsushi Ogura	2019 IEEE Electron Devices Technology and Manufacturing Conference	Singapore
2019年3月14日	Control of Oxygen Pricipitation in Cz-Silicon for High Efficiency Solar Cells	Atsushi Ogura	Kohei Onishi, Kosuke Kinoshita, and Yoshio Ohshita	Global Photovoltaic Conference 2019	Gwangju, Korea	Ivited
2019年5月20日	3300V Scaled IGBTs Driven by 5V Gate Voltage	Takuya Saraya	Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, and Shin-Ichi Nishizawa , Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramot	31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)	Shanghai, China
2019年5月28日	Investigation on the Stability of MoS2(1-x)Te2x Fabricated By Tellurization Using Organic Precursor (i-C3H7)2Te	Y. Hibino,	S. Ishihara, K. Yamazaki, Y. Oyanagi, Y. Hashimoto, N. Sawamoto, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, and A. Ogura	235th Electrochemical Society Meeting	Dallas, TX
2019年6月6日	Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration	K. Matsuura	M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K . Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, and H.Wakabayashi	19th International Workshop on Junction Technology	Kyoto, Japan
2019年6月18日	Ultra-Thin Lightweight Bendable Crystalline Si Solar Cells for Solar Vehicles	Yoshio Ohshita	Kohei Onishi, Ryo Yokogawa, Tappei Nishihara, Takefumi Kamioka, Kyotaro Nakamura, Tomoyuki Kawatsu, Toshiki Nagai,　Noboru Yamada, Yukio Miyashita, and Atsushi Ogura	46th IEEE Photovoltaic Specialists Conference	Chicago, IL
2019年6月20日	Evaluated of ITO/a-Si interface fabricated by RPD technique	Tappei Nishihara	Takefumi Kamioka, Hiroki Kanai, Yoshio Ohshita, Hideki Matsumura, Satoshi Yasuno, Ichiro Hirosawa, and Astushi Ogura	46th IEEE Photovoltaic Specialists Conference	Chicago, IL
2019年7月10日	Growth condition optimization of non-polar AlN on sapphire substrate deposited by reactive RF sputtering	Kota Tatejima	Kazunori Kurishima, Keiji Ishibashi, Kenichiro Takahashi, Setsu Suzuki, Atsushi Ogura, Toyohiro Chikyow, and Takahiro Nagata	The 11th International Conference on the Science and Technology for Advanced Ceramics	Tsukuba, Japan
2019年8月5日	Evaluation of process damage induced by transparent conductive oxide film deposition for silicon heterojunction solar cells	Hiroki Kanai	Tappei Nishihara, Takefumi Kamioka, Junsuke Matsuzaki, Hirohisa Takahashi, Junya Kiyota, Satoshi Yasuno, Ichiro Hirosawa, and Atsushi Ogura	29th Annual NREL Silicon Workshop	Winter Park, Colorado
2019年8月7日	Effects of Phosphorus Doping in Si substrates on the Band Alignment and Electrical Performance of TiO 2 Electron Selective Contacts	Hyunju Lee	Takefumi Kamioka, Atsushi Ogura, and Yoshio Ohshita	29th Annual NREL Silicon Workshop	Winter Park, Colorado
2019年10月30日	Switching of 3300V Scaled IGBT by 5V Gate Drive	T. Hiramoto	T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furuka wa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, and H. Ohash	13th International Conference on ASIC (ASICON 2019)	Chongqing, China	Inveited
2019年10月30日	Temperature and Polarity Dependence of Electrical Properties of ZnO Film on Pyroelectric LiNbO3 Single Crystal	Y. Yasuhara	K. Kurishima, T. Chikyow, A. Ogura, and T. Nagata	32nd International Microprocesses and Nanotechnology Conference	Hiroshima, Japa
2019年10月30日	Stress Evaluation Induced by Wiggling SiN Fine Patternby Using Raman Spectroscopy	M. Koharada	R. Yokogawa, N. Sawamoto, K. Yoshioka, and A. Ogura	32nd International Microprocesses and Nanotechnology Conference	Hiroshima, Japa
2019年10月30日	Band Alignment at Non-Polar AlN/MnS Interface Investigated by Hard X-ray Photoelectron Spectroscopy	K. Kurishima	K. Tatejima, Y. Yamashita, S. Ueda, K. Ishibashi, K. Takahashi, S. Suzuki, A. Ogura, T. Chikyow, and T. Nagata	32nd International Microprocesses and Nanotechnology Conference	Hiroshima, Japa
2019年11月5日	Characterization of Bendable Crystalline Si Solar Cells Made by Ultra-thin Wafer Slicing	N. Yamada	K. Onishi, R. Yokogawa, T. Nishihara, T. Kamioka, K. Nakamura, T. Kawatsu, T. Nagai, Y. Kotake, Y. Miyashita, Y. Ohshita, and A. Ogura	the 29th International Photovoltaic Science and Engineering Conference (PVSEC29	Xi'an, China
2019年11月5日	New Analysis Method to Evaluate Amorphous/Crystalline Si Interface for High Efficiency Heterojunction Solar Cells	Takefumi Kamioka	Yutaka Hayashi, Kazuhiro Gotoh, Ryo Ozaki, Motoo Morimura, Ayako Shimizu, Kyotaro Nakamura, Noritake Usami, Yoshio Ohshita, and Atsushi Ogura	the 29th International Photovoltaic Science and Engineering Conference (PVSEC29	Xi'an, China
2019年11月7日	Evaluation of plasma induced damage in Silicon substrate by solar cell fabrication process	K. Onishi	Y. Hara, T. Nishihara, H. Kanai, T. Kamioka, Y. Ohshita, and A. Ogura	the 29th International Photovoltaic Science and Engineering Conference (PVSEC29	Xi'an, China
2019年11月8日	High Mobility Transparent Conductive Oxide Film for Silicon Heterojunction Solar Cell	Tappei Nishihara	Hiroki Kanai, Takefumi Kamioka, Junsuke Matsuzaki, Junya Kiyota, Yoshio Ohshita, Kyotaro Namakura, Satoshi Yasuno, Ichiro Hirosawa4 Toshiro Okawa, and Atsushi Ogura	the 29th International Photovoltaic Science and Engineering Conference (PVSEC29	Xi'an, China
2019年11月18日	Non-destructive Evaluation of Chemical Bonding States at Buried Interface using Laboratory Hard X-ray Photoelectron Spectroscopy	Tappei Nishihara	Hiroki Kanai, Toshiro Okawa, and Atsushi Ogura	2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY Technical Program	Tokyo, Japan
2019年11月19日	Characteristics of Oxide TFT with Amorphous Carbon-Doped In2O3 Channel Using 150 ºC Low Temperature Process with ALD and O3 Annealing	Riku Kobayash	Toshihide Nabatame, Kazunori Kurishima, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, and Atsushi Ogura	2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY Technical Program	Tokyo, Japan
2019年11月27日	Strain Evaluation of Laser-annealed or RTA Sn-doped SiGe Layers	Shota Komago	Ryo Yokogawa, Kazutoshi Yoshioka, Naomi Sawamoto, John O. Borland, Takashi Kuroi, Yoji Kawasaki, and Atsushi Ogura	8th International Symposium on Control of Semiconductor Interfaces	Sendai, Japan
2019年12月3日	Evaluation of Film Quality for Various Deposition Conditions of MOCVD MoS2 Films Fabricated with a Novel Mo Precursor i-Pr2DADMo(CO)3	Kota Yamazaki	Yusuke Hibino, Yuya Oyanagi, Yusuke Hashimoto, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudo, Hitoshi Wakabayashi, and Atsushi Ogura	2019 MRS Fall Meeting & Exhibit	Boston, MA
2019年12月3日	The Physical and Chemical Properties of MoS2(1-x)Te2x Alloy Synthesized by Co-Sputtering and Chalcogenization and Their Dependence on Fabrication Conditions	Yusuke Hibino	Kota Yamazaki, Yusuke Hashimoto, Yuya Oyanagi, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudo, Hitoshi Wakabayashi, and Atsushi Ogura	2019 MRS Fall Meeting & Exhibit	Boston, MA
2019年12月12日	Reliability of Ferroelectric HfxZr1􀀀xO2 Thin Films Using 300C Low Temperature Process with Plasma-Enhanced Atomic Layer Deposition,	T. Onaya	T. Nabatame, Y. C. Jung, H. Hernandez-Arriaga, J. Mohan, H. S. Kim, A. Khosravi, N. Sawamoto, T. Nagata, R. M. Wallace, J. Kim, and A. Ogura	50th IEEE Semiconductor Interface Specialists Conference	San Diego, CA