国際会議　10〜11年					2013/6/24 更新
発行年月	タイトル	第一著者	共著者	会議名	開催場所	備考
2010年4月5日	Chemical Vapor Deposition of Ge2Sb2Te5 Thin Film for Phase Change Memory	Seiti Hamada	Takafumi Horiike, Masato Ishikawa, Hideaki Machida,　Atsushi Ogura, Yoshio Ohshita and Takayuki Ohba	2010 Materials Research Society Spring Meeting	San Francisco
2010年4月26日	Cross-sectional UV-Raman measurement for two-dimensional channel-stress profile in extremely high-performance pMOSFET	H. Akamatsu	M. Takei, D. Kosemura, K. Nagata, S.　Mayuzumi, S. Yamakawa, H. Wakabayashi, A. Ogura	217th Electrochemical Society Meeting	Vancouver
2010年4月26日	Suppression mechanism of volume shrinkage for SOG film by plasma treatment	K. Nagata	D. Kosemura, M. Takei, H. Akamatsu, M. Hattori, T. Koganezawa, M. Machida, J. Son, I. Hiro-sawa, T.Nishita, T. Shiozawa, D. Katayama,　Y. Sato, Y. Hirota and A. Ogura	217th Electrochemical Society Meeting	Vancouver
2010年1月14日	Material Exploration of ZrO2-Based Dielectric Thin Films for DRAM Capacitors　by Composition-Spread Film Method”	Yuji Kiyota	Kenji Itaka, Yuta Iwashita, Tetsuya Adachi, Toyohiro Chikyow, Atsushi Ogura	The 4th Global COE International Symposium on “Practical Chemical Wisdom”〜 Joint Symposium with MANA, NIMS 〜Advanced Materials Design at ano- and Mesoscales toward Practical Chemical Wisdom	Tokyo
2010年4月6日	Chemical Vapor Deposition of Ge2Sb2Te5 Thin Film for Phase Change Memory	Seiti Hamada	Takafumi Horiike, Masato Ishikawa, Hideaki Machida, Atsushi Ogura, Yoshio Ohshita and Takayuki Ohba	Ｍａｔｅｒｉａｌｓ　Ｒｅｓｅａｒｃｈ　Ｓｏｃｉｅｔｙ　２０１０　Ｓｐｒｉｎｇ　Ｍｅｅｔｉｎｇ	San Franbsisco
2010年4月26日	Suppression mechanism of volume shrinkage for SOG film by plasma treatment	K. Nagata	D. Kosemura, M. Takei, H. Akamatsu, M. Hattori, T. Koganezawa, M. Machida, J. Son, I. Hirosawa, T. Nishita, T. Shiozawa, D. Katayama, Y. Sato, Y. Hirotac and A. Oguraa	217th Electrochemical Society Meeting	Vancouver, Canada
2010年4月26日	Cross-sectional UV-Raman measurement for obtaining two-dimensional channelstress profile in extremely high-performance pMOSFETs	H. Akamatsu	M. Takei, D. Kosemura, K. Nagata, S. Mayuzumi, S. Yamakawa, H. Wakabayashi, A. Ogura	217th Electrochemical Society Meeting	Vancouver, Canada
2010年6月5日	Evaluation of Strained Silicon by electron back scattering pattern compared with Raman measurement and edge force model calculation	M. Tomita	D. Kosemura, M. Takei, K. Nagata, H. Akamatsu and A. Ogura	International Symposium on Technology Evolution for Silicon Nano-Electronics	Tokyo, Japan
2010年6月3日	Channel strain analysis in high-performance MOSFET by Raman spectroscopy with water-immersion objective lens	Munehisa Takei	Daisuke Kosemura, Kohki Nagata, Hiroaki Akamatsu and Atｓushi Ogura	International Symposium on Technology Evolution for Silicon Nano-Electronics	Tokyo, Japan
2010年6月3日	Excitation of forbidden phonon modes in Si using a high-NA oil-immersion lens for anisotropic biaxial stress analysis	D. Kosemura	M. Takei, K. Nagata, H. Akamatsu, M. Hattori, M. Tomita, and A. Ogura	International Symposium on Technology Evolution for Silicon Nano-Electronics	Tokyo, Japan
2010年6月7日	Quantitative analysis of impurities in solar-grade Si by photoluminescence spectroscopy around 20 K	Takaaki Iwai	Michio Tajima, Atsushi Ogura	E-MRS 2010 Spring Meeting	Strasbourg, France
2010年6月13日	Low Resistive ALD TiN Metal Gate using TDMAT Precursor for High Performance MOSFET	T. Hayashida	K. Endo, Y. X. Liu, T. Matsukawa, S. Ouchi, K. Sakamoto, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, and M. Masahara	The 2010 Silicon Nanoelectronics Workshop	Hawaii
2010年6月18日	On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs	Y. Liu	K. Endo, S. Ouchi, T. Kamei*, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida*, K. Sakamoto, T. Matsukawa, A. Ogura*, M. Masahara	2010 Symposium on VLSI Technology	Hawaii
2010年6月25日	Behavior of nickel silicide in multi-crystalline silicon for solar cells	Tomihisa Tachibana	Takashi Samejima, Koji Arafune, Yoshio Ohshita, and Atsushi Ogura	Asia-Pasific Conference on Semiconducting Silicides and Rekated Science and Technology Towards Sustainable Optelectronics	Tsuskkuba, Japan
2010年8月2日	Effects of High Temperature Annealing on Minority Carrier Recombination Properties in Multi-crystalline Silicon　for Solar Cells	Takashi Sameshima	Tomihisa Tachibana, Yoshio Ohshita, Koji Arafune,　and Atsushi Ogura	20th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes	Breckenridge, CO
2010年8月3日	Light Elements Mapping in Cast-grown Multicrystalline Silicon	Takahide Ishizuka	Atsushi Ogura，Koji Arafune，Yoshio Ohshita，Haruhiko Ono	20th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes	Breckenridge, CO
2010年8月12日	Stress Tensor Measurement by Raman Spectroscopy with High-Numerical-Aperture Immersion Lens	D. Kosemura	A. Ogura	22th International Conference on Raman Spectroscopy	Boston
2010年8月12日	Evaluation of heavily doped poly-Si thin films recrystallized by excimer laser annealing using UV/visible Raman spectroscopy	Takashi Kubo	Daisuke Kosemura, Atsushi Ogura, Takashi Noguchi, Toshiharu Suzuk	22th International Conference on Raman Spectroscopy	Boston
2010年8月24日	Ion beam irradiation to poly(L-lactide-co-ε-caprolactone) copolymer film for biocompatibility control	Daisuke Mano	Shinya Morisaki, Atsushi Ogura, Toshiyui Tanaka, Kyoichiro Mizutani, Hitoshi Sakuragi, Yoshiaki Suzuki, and Hiroshi Ujiie	17th Inetrnational Conference  on ion beam modification of materials	Montreal, Acanada
2010年8月24日	Ion Beam Modification of PTFE Fiber and Polyester Fiber for Three-Dimensional Scaffold	Shinya Morisaki	Daisuke Mano, Atsushi Ogura, Toshiyuki Tanaka, Kyouichirou Mizutani, Yoshiaki Suzuki, and Kazushi Sakuragi	17th Inetrnational Conference  on ion beam modification of materials	Montreal, Acanada
2010年9月23日	Material Research on High Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells	T. Tachibana	T. Sameshima, Y. Iwashita, Y. Kiyota, T. Chikyow, H. Yoshida, K. Arafune, S. Satoh and A. Ogura	2010 International Conference on Solid State Devices and Materials	Tokyo, Japan
2010年9月23日	Strain and stress tensor evaluation in global and local strained-Si by electron back scattering pattern	Motohiro Tomita	Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu and Atsushi Ogura	2010 International Conference on Solid State Devices and Materials	Tokyo, Japan
2010年9月24日	Quantitative Analysis of Stress Relaxation in TEM specimen fabrication by Raman Spectroscopy with High-NA Oil-Immersion Lens	Daisuke Kosemura	Atsushi Ogura	2010 International Conference on Solid State Devices and Materials	Tokyo, Japan
2010年9月24日	Experimental Study of PVD-TiN Gate with Poly-Si Capping and Its Application to 20 nm FinFET Fabrication	T. Kamei	Y. X. Liu, K. Endo, S. O’uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, T. Matsukawa, K. Sakamoto, A. Ogura, and M. Masahara	2010 International Conference on Solid State Devices and Materials	Tokyo, Japan
2010年10月11日	Fixed Charge Control in the Passivation Films using Binary Oxide Dielectrics for Crystalline Silicon Solar Cell	T. Tachibana	T. Sameshima, Y. Iwashita,　Y. Kiyota, T. Chikyow, H. Yoshida, K. Arafune, S. Satoh and A. Ogura	218th Electrochemical Society Meeting	Las Vegas
2010年10月12日	Combinatorial investigation of ZrO2-based dielectric materials for DRAM capacitors	Y. Kiyota	Y. Iwashita, K.Itaka, T.Adachi, T. Chikyow and A. Ogura	218th Electrochemical Society Meeting	Las Vegas
2010年11月15日	Influence of high temperature annealing on electrical activity at small angle grain boundaries in multi-crystalline silicon for solar cells	Tomihisa Tachibana	Takashi Sameshima, Yoshio Ohshita, Koji Arafune and Atsushi Ogura	The Forum on the Science and Technology of Silicon Materials 2010	Okayama, Japan
2010年11月15日	Deep-Level Photoluminescence Analysis at Room Temperature in Small-Angle Grain Boundaries in Multicrystalline Silicon	Futoshi Okayama	Yasuaki Iwata, Michio Tajima, Yoshio Ohshita and Atushi Ogura	The Forum on the Science and Technology of Silicon Materials 2010	Okayama, Japan
2010年11月15日	Photoluminescence analysis of high concentrations of donor and acceptor impurities in Si	Takaaki Iwai	Michio Tajima, Atsushi Ogura	The Forum on the Science and Technology of Silicon Materials 2010	Okayama, Japan
2010年11月15日	Improvement of spatial resolution in Raman spectroscopy by controlling measurement area	Munehisa Takei	Daisuke Kosemura, Kohki Nagata, Hiroaki Akamatsu, and Atsushi Ogura	The Forum on the Science and Technology of Silicon Materials 2010	Okayama, Japan
2010年11月12日	Combinatorial Investigation of ZrO2-Based Dielectric Materials for DRAM Capacitors	Y. Kiyota	Y. Iwashita, K. Itaka, T. Adachi, T. Chikyow and A. Ogura	23rd International Microprocesses and Nanotechnology Conference	Fukuoka, Japan
2011年5月10日	Structural analysis of atomically flat SiO2/Si interface using CTR scattering around the 110 forbidden reflection	K. Nagata	M. Hattori, D. Kosemura, M. Takei, A. Ogura, T. Koganezawa, I. Hirosawa, T. Suwa, A. Teramoto, T. Hattori, and T. Ohmi	Euro MRS 2011Spring Meeting	Nice, France
2011年5月12日	Evaluation of quantum confinement effect in nanocrystal Si dot layer by Raman spectroscopy	Y. Mizukami	D. Kosemura , Y. Numasawa , Y. Ohshita , and A. Ogura	Euro MRS 2011Spring Meeting	Nice, France
2011年8月2日	Influences of Fe and Ni Contaminations on Electrical Activities at Crystalline Defects in Multi-crystalline Silicon Substrates	Yuki Tsuchiya	Naoto Miyazaki, Takashi Sameshima, Tomihisa Tachibana, Yoshio Ohshita, Koji Arafune, and Atsushi Ogura	21st Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes	Breckenridge, CO
2011年8月2日	Evaluation of Lightelement Distributions in Multicrystalline Silicon　for Solar Cells	Hiroki Kusunoki	Takahide Ishizuka, Atsushi Ogura, and Haruhiko Ono	21st Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes	Breckenridge, CO
2011年9月6日	Evaluation of crystalline defects in silicon ingots fabricated by seeding cast growth	T. Tachibana	T. Sameshima, N. Miyazaki, T. Kojima, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita, and A. Ogura	26th European Photovoltaic Solar Energy Conference and Exhibition	Hamburg, Germany
2011年9月26日	High-speed Deep-level Luminescence Imaging in Multicrystalline Si Solar Cells	F. Okayama	M. Tajima, H. Toyota and A. Ogura	41st European Solid-State Device Research Conference	Helsinki, Finland
2011年9月26日	Combinatorial Synthesis Study of Passivation Layers for Crystalline Si Photovoltaics	N. Ikeno	T. Tachibana, H. Lee, H. Yoshida, K. Arafune, S. Satoh,  T. Chikyow and A.Ogura	14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors	Miyazaki, Japan
2011年9月26日	Evaluation of Silicon Substrate Fabricated by Seeding Cast Technique	T. Tachibana1	T. Sameshima, T. Kojima, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita and A. Ogura	14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors	Miyazaki, Japan
2011年9月26日	Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction	Y. Mizukami	D. Kosemura, Y. Numasawa, Y. Ohshita and A. Ogura	14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors	Miyazaki, Japan
2011年9月26日	Evaluation of GexSbyTez Film Structure Fabricated by Chemical Vapor Deposition	S. Hamada	T. Horiike, T. Uno, M. Ishikawa, H. Machida, Y. Ohshita and A. Ogura	14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors	Miyazaki, Japan
2011年9月26日	EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells	T. Sameshima	N. Miyazaki, Y. Tsuchiya, T. Tachibana, Y. Ohshita, K. Arafune and A. Ogura	14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors	Miyazaki, Japan
2011年9月28日	Impacts of Interfacial Strain on Crystal-Truncation-Rod (CTR) Scattering around 110 Forbidden Reflections	K.Nagata	D.Kosemura, M.Takei, A.Ogura, T.Koganezawa, I.Hirosawa, T. Suwa, A. Teramoto, T. Hattori and T. Ohmi	14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors	Miyazaki, Japan
2011年9月29日	Direct Comparison of Electrical Charateristics for Double-Gate and Tri-Gate Flash Memories	Y. X. Liu	T. Kamei, T. Matsukawa, K. Endo, S. Ouchi, J. Tsukada, H. Yamauchi, Y. Ishikawa,T. Hayashida, K. Sakamoto,A. Ogura, M. Masahara	2011 International Conference on Solid State Devices and Materials	Nagiya, Japan
2011年9月29日	Atomic Layer Deposited Aluminum Oxide Passivation Layers for Crystalline Silicon: Effects of Deposition Temperature on Film and Interface Structures	H. Lee	N. Sawamoto, T. Tachibana, N. Ikeno, K. Arafune, H. Yoshida, S. Satoh, K. Matsumoto, K. Takahashi, T. Chikyow, A. Ogura	2011 International Conference on Solid State Devices and Materials	Nagiya, Japan
2011年9月29日	Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic Layer Deposited AlOx	K.Arafune	S.Miki, R.Matsutani, J.Hamano, H.Yoshida, T.Tachibana, A.Ogura, K.Matsumoto, K.Takahashi, Y.Ohshita, S.Satoh	2011 International Conference on Solid State Devices and Materials	Nagiya, Japan
2011年9月30日	Evaluation of Anisotropic Strain Relaxation in SSOI Nanostructure by Oil-Immersion Raman Spectroscopy	D. Kosemura	M. Tomita, K. Usuda, A. Ogura	2011 International Conference on Solid State Devices and Materials	Nagiya, Japan
2011年9月30日	Channel strain measurements in 32nm-node CMOSFETs	M. Takei	H. Hashiguchi, T. Yamaguchi, D. Kosemura, K. Nagata, A. Ogura	2011 International Conference on Solid State Devices and Materials	Nagiya, Japan
2011年9月30日	Performance and Variability Comparisons between ALD- and PVD-TiN Gate FinFET	T. Hayashida,	K. Endo, Y. X. Liu, S. O'uchi, T. Matsukawa, W. Mizubayashi, S. Migita, Y. Morita, H. Ota, H. Hashiguchi, D. Kosemura, T. Kamei, J. Tsukada, H. Yamauchi, A. Ogura, M. Masahara	2011 International Conference on Solid State Devices and Materials	Nagiya, Japan
2011年9月30日	Impact of light element impurities on crystalline defect generation in silicon substrate	T. Tachibana	T. Sameshima, T. Kojima, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita, A. Ogura	2011 International Conference on Solid State Devices and Materials	Nagiya, Japan
2011年10月3日	Influence of Fin Height on Poly-Si/PVD-TiN Stacked Gate FinFET Performance	T. Hayashida	K. Endo, Y. X. Liu, S. O’uchi, T. Matsukawa, H. Hashiguchi, D. Kosemura, T. Kamei, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, and M. Masahara	2011 IEEE International SOI Conference	Arizona, AZ
2011年10月4日	Comparative Study of Tri-gate Flash Memories with Split and Stack Gates	T. Kamei,	Y. X. Liu, T. Matsukawa, K. Endo, S. O’uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A. Ogura, and M. Masahara	2011 IEEE International SOI Conference	Arizona, AZ
2011年10月10日	Evaluation of Al2O3 films for MANOS memory device with oxygen infusion by gas cluster ion beam	K. Nagata	H. Hashiguchi, T. Yamaguchi, A. Ogura, H. Oji, J. Son, I. Hirosawa, Y. Tanaka, Y. Hirota, J. Gumpher, K. Yamashita	220th ECS Meeting and Electrochemical Energy Summit	Boston, MA
2011年10月11日	Evaluation of SiO2 film properties fabricated by plasma oxidation	T. Yamaguchi	K. Nagata, A. Ogura, T. Koganezawa, I. Hirosawa, Y.Kabe, Y. Sato, S. Ishizuka and Y. Hirota	221st ECS Meeting and Electrochemical Energy Summit	Boston, MA
2011年10月11日	Effect of plasma treatment on stress reduction induced by shallow trench isolation filled with spin-on-glass dielectric	H. Hashiguchi	K. Nagata, T. Sameshima, Y. Mizukami, A. Ogura, T. Kuroda, Y. Sato, S. Ishizuka, and Y. Hirota	222nd ECS Meeting and Electrochemical Energy Summit	Boston, MA
2011年10月12日	Impacts of Metal Impurities on Recombination Properties at Small Angle Grain Boundaries in Multicrystalline Silicon for Solar Cells	T. Sameshima	Y. Tsuchiya, N. Miyazaki, T. Tachibana, Y. Ohshita, K. Arafune, and A. Ogura	223rd ECS Meeting and Electrochemical Energy Summit	Boston, MA
2011年10月26日	Tri-gate Flash Memory with Improved IPD Layer	T. Kamei	Y.X. Liu , T. Matsukawa , K. Endo , S.O'uchi , J. Tsukada , H. Yamauchi , Y. Ishikawa , T. Hayashida , K. Sakamoto , A. Ogura  and M.　Masahara	24th International Microprocesses and Nanotechnology Conference	Kyoto, Japan
2011年10月26日	Demonstration of ALD-TiN Gate FinFET with TDMAT Precursor for WFV Reduction	T. Hayashida	K. Endo 3, Y.X. Liu 3, S. O'uchi 3, T. Matsukawa 3, W. Mizubayashi 3, S. Migita 3, Y. Morita 3, H. Ota 3, H. Hashiguchi 1, D. Kosemura, T. Kamei, J. Tsukada, Y.　Ishikawa, H. Yamauchi, A. Ogura, and M.　Masahara	24th International Microprocesses and Nanotechnology Conference	Kyoto, Japan
2011年10月26日	Fabrication and Characterization of Floating-Gate Type MOS Capacitors with Nanoscale Triangular Cross-Section Tunnel Areas	Y.X. Liu	R.F. Guo 1, T. Kamei 2, T. Matsukawa K. Endo, S. O'uchi, J. Tsukada, H.　Yamauchi, Y. Ishikawa, T. Hayashida, K.　Sakamoto, A. Ogura , and M. Masahara	24th International Microprocesses and Nanotechnology Conference	Kyoto, Japan
2011年11月1日	Composition control of GexSbyTez film for PCRAM application by chemical vapor deposition	Takafumi Horiike	Seiti Hamada, Tomohiro Uno, Hideaki Machida, Masato Ishikawa, Hiroshi Sudo, Yoshio Ohshita, and Atsushi Ogura	11th Non-Volatile Memory Technology Symposium	Shanghai. China
2011年10月26日	Demonstration of ALD-TiN Gate FinFET with TDMAT Precursor for WFV Reduction	T. Hayashida	K. Endo 3, Y.X. Liu 3, S. O'uchi 3, T. Matsukawa 3, W. Mizubayashi 3, S. Migita 3, Y. Morita 3, H. Ota 3, H. Hashiguchi 1, D. Kosemura, T. Kamei, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura and M. Masahara	24th International Microprocesses and Nanotechnology Conference	Kyoto, Japan
2011年10月26日	Tri-gate Flash Memory with Improved IPD Layer	T. Kamei	Y.X. Liu 2, T. Matsukawa 2, K. Endo S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A Ogura and M. Masahara	24th International Microprocesses and Nanotechnology Conference	Kyoto, Japan
2011年10月27日	Fabrication and Characterization of Floating-gate Type MOS Capacitors with Nanoscale	Y.X. Liu	R.F. Guo 1, T. Kamei 2, T. Matsukawa K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A. Ogura and M. Masahara	24th International Microprocesses and Nanotechnology Conference	Kyoto, Japan
2011年11月1日	Combinatorial Investigation of Passivation Layers for Crystalline Si Photovoltaics	Norihiro Ikeno	Tomihisa Tachibana,  Hyunju Lee, Takahiro Nagata, Kazuyoshi Kobashi, Atsushi Ogura and Toyohiro Chikyow	The 3rd NIMS(MANA)- Waseda International Symposium	Tokyo, Japan
2011年11月18日	Verification of GeSbTe composition in the high aspect hole　filled by Chemical Vapor Deposition	Hideaki Machida	Takafumi Horiike, Seiti Hamada, Tomohiro Uno, Naomi Sawamoto, Kohei Suda, Masato Ishikawa,  Hiroshi Sudo, Yoshio Ohshita, and Atsushi Ogura	The 23rd Symposium on Phase Change Optical information Storage	Atami, Japan
2011年12月29日	Characterization of Light Element Precipitates in Large Grain Multicrystalline Silicon	J. Li	T. Sekiguchi, H. Harada, Y. Miyamura, K. Kakimoto, T. Kojima, Y. Ohshita, T. Tachibana and A. Ogura	21st International Photovoltaic Science and Engineering Conference	Fukuoka, Japan
2011年11月29日	Gettering Effect on Recombination Properties at Intra-Grain Deffects in Multicrystalline Silicon	T. Sameshima	N. Miyazaki1, Y. Tsuchiya, T. Tachibana, Y. Ohshita, K. Arafune and A. Ogura	21st International Photovoltaic Science and Engineering Conference	Fukuoka, Japan
2011年11月29日	Study of Crstalline Deffect Generation Caused by Light Element Impurities in Silicon Substrate	T. Tachibana	T. Sameshima1, T. Kojima2, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita and A. Ogura	21st International Photovoltaic Science and Engineering Conference	Fukuoka, Japan
2011年11月29日	Groeth and Characterization of Large Grain Multicrsytalline Silicon	Y. Miyamura	K. Jiptner, H. Harada, M. Fukuzawa, K. Kakimoto, T. Kojima, Y. Ohsita, T. Tachibana, A. Ogura and T. Sekiguchi	21st International Photovoltaic Science and Engineering Conference	Fukuoka, Japan
2011年11月30日	O3-Based ALD Processed Aluminum Oxide Passivation Film for c-Silicon	H. Lee	T. Tachibana, N. Ikeno, H. Hashiguchi, K. Matsumoto, K. Takahashi, T. Chikyow and A. Ogura	21st International Photovoltaic Science and Engineering Conference	Fukuoka, Japan
2011年12月1日	Evaluation of Antireflection Coating Consists of Double Layer a-SiNx:H Coating with Diffrent Refractive Indexes	M. Monden	S. Miki, H. Yoshida, A. Ogura, S. Satoh and K. Arafune	21st International Photovoltaic Science and Engineering Conference	Fukuoka, Japan
2011年12月1日	Investigation of Zirconium Oxide Based Passivation Layer for Crystalline Silicon Solar Cells	N. Ikeno	T. Tachibana, H. Lee, T. Nagata, K. Kobashi, H. Yoshida, K. Arafune, S. Satoh, T. Chikyow and A. Ogura	21st International Photovoltaic Science and Engineering Conference	Fukuoka, Japan