国際会議　08〜09年					2011/4/11 更新
発行年月	タイトル	第一著者	共著者	会議名	開催場所	備考
2008年1月	Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate	T. Yoshida	D. Kosemura, Y. Kakemura, M. Takei, H. Saito, A. Ogura, T. Shimura, T. Koganesawa, and I. Hirosawa	Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits	Ireland
2008年5月	Evaluation of local strain in Si using UV-Raman spectroscopy	A. Ogura	D. Kosemura, Y. Kakemura, T. Yoshida,	Euro-MRS 2008, Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications,	France	Inveited
2008年5月	Evaluation and control of strain in Si induced by patterned SiN stressor	H. Saitoh	M. Takei, A. Ogura, T. Koganezawa, I. Hirosawa, M. Kohno, T. Nishita, and T. Nakanish	213th Electrochemical Society Meeting	Phoenix
2008年5月	Chemical Vapor deposition using Pt(PF3)4 and Ni(PF3)4	M. Ishikawa	I. Muramoto, H. Machida, S. Imai, A. Ogura, and Y. Ohshita	213th Electrochemical Society Meeting	Phoenix
2008年5月	Application of Synchrotron X-ray Diffraction	T. Shimura,	T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida, and H. Watanabe	213th Electrochemical Society Meeting	Phoenix
2008年5月	Transconductance Enhancement by Utilizing Pattern Dependent Oxidation in Silicon Nanowire Field-Effect Transistors	A. Seike	T. Tange, I. Sano, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura and I. Ohdomari	213th Electrochemical Society Meeting	Phoenix
2008年6月	Channel-Stress Study on Gate-Size Effects for Damascene-Gate pMOSFETs with Top-Cut Compressive Stress Liner and eSiGe	S. Mayuzumi	S. Yamakawa, D. Kosemura, M. Takei, J. Wang, T. Ando, Y. Tateshita, M. Tsukamoto, H. Wakabayashi, T. Ohno, A. Ogura and N. Nagashima	2008 Symposium on VLSI Technology and circuit	Hawaii
2008年8月	Evaluation of multi-crystalline silicon substrates with p-n diode array	T. Tachibana	K. Imai, J. Masuda, A. Ogura, K. Arafune, Y. Ohshita, and  M. Tajima	18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes	Denver
2008年8月	High Spatial Resolution Evaluation of Strain in High-Performance Si MOSFET by UV-Raman Spectroscopy	D. Kosemura	M.Takei, T. Yoshida, Y. Kakemura, A. Ogura, R. Shimidzu	21th International Conference on Raman Spectroscopy	London	Guraduate Student Award
2008年9月	Study of Stress Effect on Replacement Gate Technology with Compressive Stress　Liner and eSiGe for pFETs	S. Yamakawa,	S. Mayuzumi, D. Kosemura, M. Takei, J. Wang, Y. Tateshita, H. Wakabayashi, T. Ohno, A.Ogura, and H. Ansai	2008 International Conference on Simulation of Semiconductor Processes and Devices	Hakone
2008年10月	Study on Stress Memorization by Argon Implantation and Annealing	M. Hino	K. Nagata, T. Yoshida, D. Kosemura, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ogura, T. Hattori and H. Iwai	214th Electrochemical Society Meeting	Hawaii
2008年10月	Transconductance Enhancement of Strained <110> and <100> Si Nanowire Channel Field-Effect Transistors	I. Tsuchida	A. Seike, Y. Sugiura, D. Kosemura, A. Ogura and I. Ohdomari	214th Electrochemical Society Meeting	Hawaii
2008年10月	Application of Synchrotron X-ray Diffraction Methods　to Gate Stacks of Advanced MOS devices	T. Shimura	T. Inoue, Y. Okamoto, T. Hosoi, H. Edo, S. Iida, A. Ogura, and H. Watanabe	214th Electrochemical Society Meeting	Hawaii
2008年10月	Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography	T. Shimura	T. Inoue, Y. Okamoto, T. Hosoi, H. Edo, S. Iida, A. Ogura, and H. Watanabe	214th Electrochemical Society Meeting	Hawaii
2008年10月	Relationship between grain boundary structures and electrical property in polycrystalline Si for solar cells	Koji Fukuda	Hideaki Kawai, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, and Atushi Ogura	Renewable Energy 2008	Pusan
2008年10月	New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-ray Photoelectron Spectroscopy	K. Tsutsui,	M. Watanabe, Y. Nakagawa, T. Matsuda, T. Yoshida, E. Ikenaga, K. Kakushima, P. Ahmet, H. Nohira,T. Maruizumi, A. Ogura, T. Hattori and H. Iwai	ESSDERC2008	Great Britain
2008年11月	A Comparative Study of the Electrical Characteristics of Sputtered TiN Gate Planar MOSFETs and FinFETs	T. Hayashida	Y. X. Liu, T. Matsukawa, K. Endo, S. O’uchi, K. Sakamoto, K. Ishii, J. Tsukada,  Y. Ishikawa, H. Yamauchi, E. Suzuki, A. Ogura, and M. Masahara	2008 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology	Tokyo
2008年11月	Evaluation of Transconductance Enhancement of <110> and <100> -Channel Strained Si Nanowire Field-Effect Transistors"	A. Seike	Ikushin Tsuchida, Daisuke Kosemura, Atsushi Ogura, Takanobu Watanabe, and Iwao Ohdomari	2008 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology	Tokyo
2008年11月	Study of Strain Introduction in the Channel of MOSFET with　Transparent Dummy Gate and SiN Stressor	Daisuke Kosemura	Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Masayuki　Kohno, Tatsuo Nishita, Toshio Nakanishi, and Atsushi Ogura	The 5th International Conference on Advanced Science and Technology of Silicon Materials	Hawaii
2008年11月	Micro-Raman study of channel strain in high performance　pFETs with compressive stress liner and eSiGe using　damascene gate technology	M.Takei	D. Kosemura, S. Mayuzumi, A. Ogura	The 5th International Conference on Advanced Science and Technology of Silicon Materials	Hawaii
2008年11月	Evaluation of plasma etching damage in Si surface by　UV-Raman spectroscopy	Hirotaka Kurozaki	Daisuke Kosemura,Tetsuya Yoshida,Maki Hattori, Eiichi Nishimura, and Atsushi Ogura	The 5th International Conference on Advanced Science and Technology of Silicon Materials	Hawaii
2008年11月	The in-situ measurement of thermal expansion coefficient of thin SiGe layer on Si (001) by XRD	Hirokazu Kambayashi	Yu Yamamoto  Masato Imai, Yoshiji Miyamura, Kazuhiko Omote, Takane Kobayashi, Atsushi Ogura	The 5th International Conference on Advanced Science and Technology of Silicon Materials	Hawaii
2008年11月	Behaviors of ultra thin SiGe layer by annealing	Yu Yamamoto	Hirokazu Kambayashi, Masato Imai, Yoshiji Miyamura, Kazuhiko Omote, Takane Kobayashi, Atsushi Ogura	The 5th International Conference on Advanced Science and Technology of Silicon Materials	Hawaii
2008年11月	Suppression of SiC Surface Roughening during High Temperature Annealing by Atmospheric Control	S. Kinoshita	A. Ogura	The 5th International Conference on Advanced Science and Technology of Silicon Materials	Hawaii
2008年11月	Investigation of Structural Defects in Strained Si Wafers by Synchrotron X-ray Topography	Takayoshi Shimura	Tomoyuki Inoue, Takuji Hosoi, Atsushi Ogura, Satoshi Iida, Masataka Umeno, and Heiji Watanabe	The 5th International Conference on Advanced Science and Technology of Silicon Materials	Hawaii
2009年5月	Ion Beam Irradiation to Type IV Collagen for Biologic Reactivity	Yuichiro  Shiga	Atsushi  Ogura, Hiroshi  Toida, Rena  Ujiie, and Yoshiaki  Suzuki	The IUMRS International Conference in Asia 2008	Aaichi
2009年5月	UV-Raman spectroscopy study on SiO2/Si interface	M. Hattori	T. Yoshida, D. Kosemura A. Ogura, T. Suwab A. Teramotob T. Hattorib and T. Ohmi	215th Electrochemical Society Meeting	San Francisco
2009年5月	Improvement of CVD SiO2 by post deposition microwave plasma treatment	K. Nagata	H. Akamatsu, D. Kosemura, T. Yoshida, M. Takei, M. Hattori, A. Ogura, T. Koganezawa, M. Machida, J. Son, I. Hirosawa, T. Siozawa, D. Katayama, Y. Sato and Y. Hirota	215th Electrochemical Society Meeting	San Francisco
2009年8月	Detail analysis of Σ9 grain boundaries in multi-crystalline silicon　substrates for solar cell	Junichi Masuda	Tomihisa Tachibana, Yoshio Ohshita, Koji Arafune,　and Atsushi Ogura	19th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes	Vail, Co
2009年8月	Recombination velocities at grain boundaries in polycrystalline silicon	Yoshio Ohshita	Takuto Kubo, Tmonmihisa Tachinbana, Atsushi Ogura, and Masafumi Yamaguchi	19th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes	Vail, Co
2009年8月	Photoluminescence analysis of impurity precipitation on small angle grain boundaries in multi-crystalline Silicon	M. Tajima	Y. Iwata, M. Ikebe, I. Yamabe, Y. Phshita and A. Ogura	20th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes	Vail, Co
2009年9月	Evaluation of Strain and Crystal Quality in Si during Shallow Trench Isolation Process Using UV-Raman Spectroscopy	Daisuke Kosemura	Yoshida Tetsuya1; Maki Hattori1; Toshikazu Mizukoshi2; Atsushi Ogura	13th International Conference on Defects--Recognition, Imaging and Physics in Semiconductors	Wheering, West Virginia
2009年9月	Evaluation of multi-crystalline silicon substrates for solar cells by Raman spectroscopy	Michio Tajima	Masatoshi Ikebe, Yoshio Ohshita, Atsushi Ogura	13th International Conference on Defects —Recognition, Imaging and Physics in Semiconductors (DRIP XIII)	Wheering, West Virginia
2009年9月	Observation of Two-Dimensional Distribution of Lattice Inclination and Strain in Strained Si Wafers by Synchrotron X-Ray Topography	Takayoshi Shimura	Tomoyuki Inoue; Daisuke Shimokawa; Takuji Hosoi; Heiji Watanabe; Atsushi Ogura; Masataka Umeno	13th International Conference on Defects —Recognition, Imaging and Physics in Semiconductors (DRIP XIII)	Wheering, West Virginia
2009年10月	Evaluation of Multi-crystalline Silicon Substrates for Solar Cells by Raman Spectroscopy	T. Tachibana	J. Masuda, A. Ogura, Y. Ohshita and K. Arafune	216th Electrochemical Society Meeting	Vienna, Austria
2009年10月	Electron-phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature	I. Tsuchida	A. Seike, H. Takai, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe and I. Ohdomari	216th Electrochemical Society Meeting	Vienna, Austria
2009年10月	Demonstration of Transconductance Enhancement on (110) and (100) Strained-nanowire FETs	A. Seike	H. Takai, I. Tsuchida, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe and I. Ohdomari	216th Electrochemical Society Meeting	Vienna, Austria
2009年10月	Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy	Munehisa Takei	Daisuke Kosemura, Kohki Nagata Hiroaki Akamatsu, Satoru Mayuzumi, Shinya Yamakawa, Hitoshi Wakabayash and Atsushi Ogura	2009 International Conference on Solid State Devices and Materials (SSDM 2009)	Sendai
2009年10月	HAX-PES Study of SiN Film for Charge Storage Layer in High Performance SONOS Type Flash Memory Cell	Daisuke Kosemura	Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Maki Hattori, Daisuke Katayama, Tatsuo Nishita, Toshio Nakanishi, Jin-Young Son, Tomoyuki Koganezawa, Ichiro Hirosawa, Atsushi Ogura	2009 International Conference on Solid State Devices and Materials (SSDM 2009)	Sendai
2009年10月	Evaluation of anisotropic biaxial stress using an immersion　 lens by Raman analysis based on the polarization rules	Daisuke Kosemura	M. Takei, K. Nagata, H. Akamatsu, R. Shimidzu and A. Ogura	2009 International Conference on Solid State Devices and Materials (SSDM 2009)	Sendai
2009年10月	Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET	T. Hayashida	K. Endo, Y. X. Liu, T. Matsukawa, S. Ouchi, K. Sakamoto, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura and M. Masahara	2009 International Conference on Solid State Devices and Materials (SSDM 2009)	Sendai
2009年10月	Experimental investigation of electron-phonon scattering effect	I. Tsuchida	A. Seike, H. Takai, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe and I. Ohdomari	2009 International Conference on Solid State Devices and Materials (SSDM 2009)	Sendai
2009年10月	Impact of adequate selection of channel direction on (001) and (110) wafer orientation for strained nanowire transistors	A. Seike	H. Takai, I. Tsuchida, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe and I. Ohdomari	2009 International Conference on Solid State Devices and Materials (SSDM 2009)	Sendai
2009年10月	GeSbTe-thin film formation by CVD for next generation memory(PCRAM: Phase Change RAM) materials	Hideaki Machida	Seichi Hamada, Takafumi Horiike, Masato Ishikawa, Atsushi Ogura,Yoshio Ohshita and Takayuki Ohba	Advanced Metallization Conference 19th Asian Session	Tokyo
2009年11月	Evaluation of interfacial Layer for Restraint of Fermi Level Pinning	Y. Iwashita	T. Adachi , K. Itaka , A. Ogura  and T. Chikyow	22nd International Microprocesses and Nanotechnology Conference	Sapporo
2009年11月	Channel Strain Analysis in Damascene-gate pMOSFETs on Si (100) and (110) Substrate by Conventional and Cross-sectional　Raman Spectroscopy	Munehisa Takei	Daisuke Kosemura, Kohki Nagata, Hiroaki Akamatsu, Satoru Mayuzumi, Shinya Ya-makawa, Hitoshi Wakabayashi and Atsushi Ogura	2009 Materials Research Society Fall Meeting	Boston