国際会議　04〜05年					2011/4/11 更新
発行年月	タイトル	第一著者	共著者	会議名	開催場所	備考
2004年5月	Properties of CVD precursors for Ni	T. Kada	M. Ishikawa, H. Machida, A. Ogura, and Y. Ohshita	Fourteenth International Conference on Crystal Growth	Grenoble
2004年6月	Surface reactions in Ni MOCVD using cyclopentadienylallylnickel as a precursorProperties of CVD precursors for Ni	M. Ishikawa	T. Kada, H. Machida, A. Ogura, and Y. Ohshita	Fourteenth International Conference on Crystal Growth	Grenoble
2004年7月	Crystalinity Estimate of Commercially Available Strained-Si Wafers using Synchrotron Highly Parallel X-ray Microbeam	K. Fukuda	N. Tomita, Y. Tsusaka, Y. Kagoshima, J. Matsui, and　A Ogura	7th Biennial Conference on High Resolution X–Ray Diffraction and Imaging	Czech　Republic
2004年9月	Depth Profiling of Si/Si1-xGex Structures by Micro-Raman Imaging	T. Mitani	S. Nakashima, H. Okumura and A. Ogura	International Conference on Solid State Devices and Materials	Tokyo
2004年10月	Ni thin films deposition using tetrakistrifluorophosphinenickel (0), Ni(PF3)4	M. Ishikawa	T. Kada, H. Machida, K. Soai, A. Ogura, Y. Ohshita	Advanced Metallization Conference 2004	Tokyo
2004年11月	Requirement for present and future SOI	A. Ogura	O. Okabayashi	The 4th Internaitonal Symposium on Advanced Science and Technology of Silicon Materials	Hawaii	Inveited
2004年11月	Characterization of SOI wafers by using synchrotron X-Ray microbeam	J. Matsui	Y. Tsusaka, K. Fukuda, Y. Kagoshima, A. Ogura	The 4th Internaitonal Symposium on Advanced Science and Technology of Silicon Materials	Hawaii	Inveited
2004年11月	Photoluminescence chracterization of strained Silicon-on-Insulator wafers	H. Mitsuyama	M. Tajima, K. Ohnishi, A. Ogura	The 4th Internaitonal Symposium on Advanced Science and Technology of Silicon Materials	Hawaii
2005年5月	Evaluation of commercial SGOI and SSOI wafers comparing with epitaxially grown strained-Si by means of laser confocal inspection system	A. Ogura	O. Okabayashi	International Symposium on Silicon-on-insulator Technology and Devices	Quebec City. Canada
2005年5月	Nickel thin film deposition using Ni (PF3)4 for LSI electrode	M. Ishikawa	H. Machida, A. Ogura, and Y. Ohshita	Electrochemical Society Meeting	Quebec City. Canada
2005年7月	Crystallinity Estimation of Strained-Si Wafers by Using Highly Parallel X-Ray Microbeam	Y. Tsusaka	K. Fukuda, N. Tomita, K. Hayashi, Y. Kagoshima, J. Matsui1 and A. Ogura	The 8th International Conference on X-ray Microscopy	Himeji, Japan
2005年8月	Estimation of Lattice Structure of Strained-Si Wafers Using Highly Parallel X-Ray Microbeam (I)	K. Fukuda	N. Tomita, K. Hayashi, Y. Tsusaka, Y. Kagoshima, J. Matsui and A. Ogura	XX Congress of the International Union of Crystallography	Florence, Italy
2005年8月	Estimation of Lattice Structure of Strained-Si Wafers Using Highly Parallel X-Ray Microbeam (II)	Y. Tsusaka	K. Fukuda, N. Tomita, K. Hayashi, Y. Kagoshima, J. Matsui and A. Ogura	XX Congress of the International Union of Crystallography	Florence, Italy
2005年9月	Composition control of Ni-silicide by Chemical Vapor Deposition using Ni(PF3)4 and Si3H8	M. Ishikawa	I. Muramoto, H. Machida, Y. Ohshita, S. Imai, and A. Ogura	International Conference on Solid State Devices and Materials	Kobe, Japan
2005年9月	UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si	I. Chiba	R. Shimidzu, K. Yamasaki, D. Kosemura, S. Tanaka, and A. Ogura	International Conference on Solid State Devices and Materials	Kobe, Japan
2005年10月	Relaxation of Strained-SOI substrates by RTA process	K. Yamasaki	D. Kosemura, S. Tanaka, A. Ogura, I Chiba, and R. Shimidzu	IEEE International SOI Conference	Hawaii, USA
2005年10月	Chemical Vapor Deposition of Ni-silicide for gate electrode	M. Ishikawa	I. Muramoto, H. Machida, Y. Ohshita, S. Imai, and A. Ogura	Advanced Metallization Conference 2005	Tokyo
2005年11月	Ni-silicide precursor for gate electrode	M. Ishikawa	I. Muramoto, H. Machida,  S. Imai A. Ogura, H. Suzuki, and Y. Ohshita,	27th International Symposium on Dry Process	Jeju, Korea