国際会議　01〜03年					2011/4/11 更新
発行年月	タイトル	第一著者	共著者	会議名	開催場所	備考
2001年3月	Gas Phase Chemical Reaction in Tantalum Nitride Low-pressure Chemical Vapor Deposition	Y. Ohshita	A. Ogura, A. Hoshino, S. Hiiro, A. Tawara, and H. Machida	Meeting of The Electrochemical Society	Washington D.C
2001年4月	Characterization of Optical Lifetime in Silicon-on-insulator wafers by Photoluminescence Decay Method	S. Ibuka	M. Tajima, and A. Ogura	Spring Meeting of The Material research Society	San Francisco
2001年4月	HfO2 Film Formation by Metalorganic Chemical Vapor Deposition	A. Hoshino	T. Suzuki, H. Machida, A. Ogura, and Y. Ohshita	Spring Meeting of The Material research Society	San Francisco
2001年7月	Formation of Epitaxially Ordered SiO2 in Oxygen-implanted Silicon during Thermal Annealing	T. Shimura	T. Hosoi, K. Fukuda, M. Umeno, and A. Ogura	International Conference on Crystal Growth	Kyoto
2001年7月	MOCVD precursors for Ta and Hf compound films	H. Machida	A. Hoshino, T. Suzuki, A. Ogura, and Y. Ohshita	International Conference on Crystal Growth	Kyota
2001年9月	Oxygen-Related Defects and Their Annealing Behavior in Low-Dose Seperation-by-Implanted Oxygen (SIMOX) Wafers Studied by Slow Positron Beams	Z.Q. Chen	A. Uedono, A. Ogura, R. Suzuki, T. Ohdaira, and T. Mikado	International Workshop on Slow Positron Beam Techniques for Solids and Surfaces	Dresden
2001年9月	Novel SOI fabrication process by light ion implantation and annealing in oxygen including atmosphere	A. Ogura		International Conference on Solid State Devices and Materials	Tokyo
2001年10月	BOX Layer Formation by Oxygen Precipitation at Implantation Damage of Light Ions	A. Ogura		IEEE International SOI Conference	Durango,Co
2001年10月	“HfO2 and Hf1-xSixO2 deposition by MOCVD using TDEAH	M. Ishikawa	H. Machida, A. Ogura, and Y. Ohshita	Advanced Metallization Conference 2001	Tokyo
2002年9月	Reduction of Pattern Edge Defects in Partial SOI by LII (Light Ion Implantation) Technique	A. Ogura		International Conference on Solid State Devices and Materials	Nagoya
2002年11月	Characterization of silicon-on-insulator wafers by monoenergetic positron beams	Akira Uedono	Hidekazu Yamamoto, Akihiko Nakano, Atsushi Ogura, Toshiyuki Ohdaira, Ryoichi Suzuki, and Tomohisa Mikado	IEEE International SOI Conference	Williamsburg, VA
2002年11月	Partial SOI/SON Formation by He+ Implantation and Annealing	A. Ogura		IEEE International SOI Conference	Williamsburg, VA
2002年8月	Organometallic Hf and Si precursors for Hf1-xSixO2 thin film formation –synthesis	H. Machida	T. Kada, M. Ishikawa, A. Ogura and Y. Ohshita	Atomic Layer Deposition (ALD2002) Conference	Seoul
2002年8月	Organometallic Hf and Si precursors for Hf1-xSixO2 thin film formation –characterization	M. Ishikawa	T. Kada, H. Machida, A. Ogura and Y. Ohshita	Atomic Layer Deposition (ALD2002) Conference	Seoul
2002年10月	Organometallic Hf and Si precursors for Hf1-xSixO2 thin film formation	M. Ishikawa	T. Kada, H. Machida, A. Ogura, and Y. Ohshita	Advanced Metallization Conference 2002	Tokyo
2002年9月	Evaluation of SOI substrates by positron annihilation	A. Ogura	A. Uedono	International Workshop on Positron Studies of Semiconductor Defects	Sendai	invited
2002年12月	SOI Formation by Light Ion Implantation and Annealing in Oxygen Including Atmosphere	A. Ogura		International Workshop on Junction Technology	Tokyo	invited
2003年4月	Evaluation of Commercial Ultra-thin SOI Substrates using Confocal Laser Inspection System	A. Ogura	O Okabayashi	International Symposium on Silicon-on-insulator Technology and Devices	Paris
2003年9月	Precursors for chemical vapor deposition of NiSi	M. Ishikawa	T. Kada, H. Machida, Y. Ohshita and A. Ogura	International Conference on Solid State Devices and Materials	Tokyo
2003年9月	Body Contact structure using Eleveted Field Insulator for Ultra-Thin Film SOI-MOSFET	S. Yamagami	R. Koh, H. Wakabayashi, J.-W. Lee, Y. Saito, A. Ogura, M. Narihiko, K. Arai, H. Takemura, Y. Ochiai, K. Takeuchi and T. Mogami,	International Ｃonference on Solid State Devices and Materials	Tokyo
2003年9月	Comparison of SOI Wafer Mappings between Photoluminescence Intensity and　Photoconductive Decay Lifetime	Michio Tajima	Zhiqiang Li, Shingo Sumie, Hidehisa Hashizume, Atsushi Ogura	International Conference on Defects: Recognition, Imaging and　Physics of Semiconductors	BATZ-sur-MER Furance
2003年9月	Nonuniformity of Commercial SOI Wafers Manifested by Photoluminescence and Lifetime Mapping	Z.Q. Li	M. Tajima, S. Sumie, H. Hashizume and A. Ogura	IEEE International SOI Conference	Newport Beach , CA
2003年9月	NiSi MOCVD for FinFET and UTB-SOI	A. Ogura	H. Wakabayashi, M. Ishikawa, T. Kada, H. Machida and Y. Ohshita	IEEE International SOI Conference	Newport Beach , CA
2003年11月	SOI  – current status and trend in the future	A. Ogura		The Forum on the Science and Technology of Silicon Materials 2003	Kanagawa	invited
2003年11月	Vacancy-type defects in SOI wafers probed by a monoenergetic positron beam	A. Uedono	A. Ogura, N. Hattori, J. Kudo, and T. Nishikawa	The Forum on the Science and Technology of Silicon Materials 2003	Kanagawa	invited
2003年10月	Precursors for NiSi MOCVD	T. Kada	M. Ishikawa, H. Machida, Y. Ohshita and A. Ogura	Advanced Metallization Conference 2003	Tokyo
2003年12月	Sub-10-nm Planar-Bulk-CMOS Devices using Lateral Junction Control	H. Wakabayashi	S. Yamagami, N. Ikezawa, A. Ogura, M. Narihiro, K. Arai,Y. Ochiai, K. Takeuchi, T. Yamamoto, and T. Mogami	Interanbtional Electron Devices Meeting, Technical Digest 989	WashingtonD.C