国際会議　〜00年					2011/4/11 更新
発行年月	タイトル	第一著者	共著者	会議名	開催場所	備考
1985年8月	Minimization of Residual Stress in SOI Films	A. Ogura	K. Egami and M. Kimura	Conference on Solid State Devices and Materials.	Tokyo
1986年8月	Atomic Layer Epitaxy of Uniform GaAs on 3‑inch Substrate in Low Pressure MOCVD  System	K. Mori	A. Ogura, M. Yoshida and H. Terao	Conference on Solid State Devices and Materials	Tokyo
1987年8月	Gas Source Si‑MBE Using SiH4	H. Hirayama	T. Tatsumi, A. Ogura and N. Aizaki	Conference on Solid State Devices and Materials	Tokyo
1988年5月	High‑speed VTR Observation of SOI Laser Annealing	A. Ogura	N. Aizaki and H. Terao	International Workshop on Future Electron Devices ‑Three Dimensional Integration	Zao, Miyagi
1988年11月	Interface Structures in Lateral Seeding Epitaxial Si on SiO2	A. Ogura	N. Aizaki and H. Terao	Fall Meeting of The Materials Research Society	Boston
1989年9月	Si/SiO2 Interface Structures in SOI and Thermally Oxidized S	A. Ogura	N. Aizaki	International Symposium on Passivity	Sappora
1990年5月	Improvement of SiO2/Si Interface Flatness by Post Oxidation Anneal	A. Ogura		International Symposium on Silicon Materials Science and Technology	Tront
1989年10月	Novel Technique for Si Epitaxial Lateral Overgrowth: Tunnel Epitaxy	A. Ogura	Y. Fujimoto	International Workshop on Future Electron Devices	Kochi
1990年6月	Novel Technique for Si Epitaxial Lateral Overgrowth: Tunnel Epitaxy	A. Ogura	Y. Fujimoto	Annual Conference of the Electronic Material Committee	Santa Barbara
1991年10月	An Investigation on the Cutoff Characteristics of sub-quater-micron SOI MOSFET	R, Koh	A. Ogura	IEEE International SOI Conference	Vail, Co
1993年	Raman spectroscopy of Si cluster	A. Ogura	H.C. Honea, C.A. Murray, K. Ragavachari, W.O. Sprenger and W.L. Brown	Gorden Reserch Conference	New Hampshar
1993年11月	Raman spectroscopy of size selected, matrix isolated Si clusters	A. Ogura	H.C. Hanea, C.A. Murray, K. Ragavachari, W.O. Sprenger, M.F. Jarrold and W.L. Brown	Fall Meeting of The Material research Society	Boston
1994年3月	Raman spectroscopy of matrix-isolated monodisperse Si clusters	K. Ragavachari, W.L. Brown, W.O. Sprenger, A. Ogura, E.C. Honea and M.F. JarroldC.A. Murray		Meeting of the American Physics Society	Florida
1995年9月	Study on Size Selected, Matrix Isolated Si clusters	A. Ogura	H.C. Hanea, C.A. Murray, K. Ragavachari, W.O. Sprenger, M.F. Jarrold and W.L. Brown	International Symposium on Small Particles and Inorganic Clusters	Kobe
1995年10月	Highly Uniform SOI Fabrication by Appling Voltage during KOH Etching of Bonded Wafers	A. Ogura		IEEE International SOI Conference	Tucson
1996年4月	Evaluation of the Depth Profile of Defects in SIMOX	A. Ogura		Spring Meeting of The Material Research Society	San Franｃisco
1996年8月	Thinning of SOI Bonded Wafers by Applying Voltage during KOH	A. Ogura		International Conference on Solid State Devices and Materials	Yokohama
1997年8月	Extension of Dose Window for Low Dose SIMOX	A. Ogura		international Symposium on Silicon-on-insulator Technology and Devices	St Luis
1997年9月	Evaluation of electron trap levels in SIMOX burid oxide by transient photocurrent spectroscopy	Y. Miura	K. Hamada, T. Kitano and A. Ogura	International Conference on Solid State Devices and Materials	Hamamatsu
1997年9月	Precise Measurement of Strain in SOI Induced by Local Oxidation	S. Kimura	A. Ogura	International Conference on Solid State Devices and Materials	Hamamatsu
1998年9月	Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H+ Splitting	A. Ogura	M. Tajima	International Conference on Solid State Devices and Materials	Hiroshima
1999年5月	Novel SIMOX with BOX at Damage Peak	A. Ogura		international Symposium on Silicon-on-insulator Technology and Devices	Paris
1998年10月	Defect Characterization in UNIBOND Wafers by Photoluminescence Spectroscopy and Transmission Electron Microscopy	M. Tajima	A. Ogura	IEEE International SOI Conference	Stuart, FL
1999年9月	Measurement of Impurity Distribution Implanted into SOI substrates	A. Ogura	M. Hiroi	International Conference on Solid State Devices and Materials	Tokyo
1999年10月	Evaluation of buried oxide formation in low-dose SIMOX process	A. Ogura	H. Ono	International Symposium on Control of Semiconductor Interfaces	Karuizawa
2000年8月	Evaluation of SOI substrates by positron annihilation	A. Ogura	A. Uedono,  and S. Tanigawa	International Conference on Solid State Devices and Materials	Sendai
2000年10月	Photoluminescence Analysis of Annealing Process in Low-Dose SIMOX Wafers	M. TajimaS. Ibuka, J. Takiguchi, A. Mizoguchi, and A. Ogura		IEEE International SOI Conference	Wakefield MA
2000年10月	LPCVD of TaCN thin film for barrier layer in Cu interconnection	A. Hoshino	S. Hiiro, and H. Machida, Y. Ohshita, A. Ogura	Advanced Metallization Conference	Tokyo
2000年11月	Control of buried oxide formation in low-dose SIMOX process	A. Ogura		Advanced Science and Technology of Silicon Materials	Hawaii	invited