学術論文 〜99年 |
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2011/4/11 更新 |
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発行年月 |
タイトル |
掲載紙名 |
第一著者 |
共著者 |
発行所 |
備考 |
1983年8月 |
Reduction of contact resistivity by As redistribution during Pd2Si formation |
J. Appl. Phys. Vol.54, pp.4679-4682 |
I. Ohdomari |
M. Hori, T. Maeda, A. Ogura,H. Kawarada, T. Hamamoto and K. Sano |
American Institute of Physics |
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1984年11月 |
Low-temperature redistribution of As in Si during Ni silicide
formation |
J. Appl. Phys. Vol.56, pp.2725-2728 |
I. Ohdomari |
M. Akiyama, T. Maeda, M. Hori, C. Takebayashi, A. Ogura, T.
Chikyo, I. Kimura, K. Yoneda, and K.N. Tu |
American Institute of Physics |
|
1985年11月 |
Germanium film on SiO2 with a <100> texture deposited by the rf‑sputterig
technique |
Appl. Phys. Lett. Vol.47, pp.1059-1061 |
K. Egami |
A. Ogura |
American Institute of Physics |
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1985年12月 |
Minimization of Residual Stress in SOI Films by Using AlN
Interlaid Insulator |
Jpn. J. Appl. Phys. Vol.24, pp.L669-671 |
A. Ogura |
K. Egami and M. Kimura |
The Institute of Pure and Applied Physics |
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1986年1月 |
Low‑temperature grain growth of initially <100> textured
polycrystalline silicon films amorphized by silicon ion implantation with
normal incident angle |
J. Appl. Phys. Vol.59, pp.289-291 |
K. Egami |
A. Ogura and M. Kimura |
American Institute of Physics |
|
1987年1月 |
Grain growth observation of <100> textured germanium film
by transmission electron microscopy |
Appl. Phys. Lett Vol.50,pp.16-18 |
A. Ogura |
H. Terao |
American Institute of Physics |
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1987年11月 |
Observation on laser‑annealed silicon‑on‑insulator structures by
cross‑section transmission
electron microscopy |
J. Appl. Phys. Vol. 62, pp.4170-4173 |
A. Ogura |
H. Terao |
American Institute of Physics |
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1988年3月 |
Gas source silicon molecular beam epitaxy using silane |
Appl. Phys. Lett. Vol.51, pp.2213- |
H. Hirayama |
T. Tatsumi, A. Ogura and N. Aizaki |
American Institute of Physics |
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1988年9月 |
Grain growth of <100> textured Ge on a SiO2/Si3N4 stripe |
Appl. Phys. Lett. Vol.53, pp.22-24 |
A. Ogura |
N. Aizaki and H. Terao |
American Institute of Physics |
|
1989年3月 |
High‑speed video observation of laser recrystallization for
semiconductor‑on‑insulator |
J. Appl. Phys. Vol.65, pp.752-754 |
A. Ogura |
N. Aizaki and H. Terao |
American Institute of Physics |
|
1989年8月 |
Si/SiO2 interface structures in laser‑recrystallized Si on SiO2 |
Appl. Phys. Lett. Vol.55, pp.547-549 |
A. Ogura |
N.Aizaki |
American Institute of Physics |
|
1989年11月 |
Novel technique for Si epitaxial lateral overgrowth : Tunnel
epitaxy |
Appl. Phys. Lett. Vol.55, 2205-2207 |
A. Ogura |
Y. Fujimoto |
American Institute of Physics |
|
1990年 |
Si/SiO2 Interface Structures in SOI and Thermally Oxidized Si |
Solid State Electronics, Vol.33 pp.275-280 |
A. Ogura |
N. Aizaki |
Elsevier B.V. |
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1990年9月 |
Non‑seeded Crystalline Orientation Control for Si‑on‑insulator
Laser Recrystallization |
Jpn. J. Appl. Phys. Vol.29, pp.1630-1633 |
A. Ogura |
|
The Institute of Pure and Applied Physics |
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1990年12月 |
Extremely Thin and Defect Free Si‑on‑insulator Fabrication by
Tunnel Epitaxy |
Appl. Phys. Lett. Vol.57, pp.2806-2807 |
A. Ogura |
|
American Institute of Physics |
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1991年3月 |
Improvement of SiO2/Si interface flatness by post oxidation annea |
J. Electrochem. Soc., Vol.138 pp.807-810 |
A. Ogura |
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The Electrochemical Society, Inc. |
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1993年4月 |
50nm-thick Silicon-on-Insulator Fabrication by Advanced
Epitaxial Lateral Overgrowth: Tunnel Epitaxy |
J. Electrochem. Soc. Vol.140, pp.1125-1130 |
A. Ogura |
A. Furuya and R. Koh |
The Electrochemical Society, Inc. |
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1993年11月 |
Raman spectra of size-selected silicon clusters and comparison
with calculated structures |
Nature Vol.366, pp.42-44 |
E.C. Honea |
A. Ogura, C.A. Murray, K. Ragavachari, W.O. Sprenger, M.F.
Jarrold and W.L. Brown |
The Electrochemical Society, Inc. |
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1996年1月 |
Control of Thickness Variation in Si-on-Insulator Bonded Wafers
by Applying Voltages during KOH Etching |
Jpn. J. Appl. Phys., Vol.35, pp.L71-73 |
A. Ogura |
|
Nature Publishing Group |
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1996年1月 |
Characterization of surface imperfection of silicon-on-insulator
wafers by means of extremely asymmetric x-ray reflection topography |
Appl. Phys. Lett., Vol.68, pp.693-695 |
S. Kimura |
A. Ogura and T. Ishikawa |
The Institute of Pure and Applied Physics |
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1996年9月 |
Evaluation of the Depth Profile of Defects in Ultra-Thin Si Film
on Buried SiO2 Formed by Implated Oxygen |
Appl. Phys. Lett., Vol.69, pp.1367-1369 |
A. Ogura |
T Tatsumi, T. Hamajima and H. Kikudhi |
American Institute of Physics |
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1997年3月 |
Thinning of SOI bonded wafers by applying voltage during KOH
etvhing. -Improvement of thickness variation by reducing leakage current |
Jpn. J. Appl. Phys., Vol.36, pp.1519-1521 |
A. Ogura |
|
American Institute of Physics |
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1997年3月 |
Characterization of surface imperfection of a bonded silicon
wafer by means of extremely asymmetric X-ray reflection topography |
Photon Factory Activity Report, Vol.13, pp.305- |
S. Kimura |
A. Ogura and T. Ishikawa |
The Institute of Pure and Applied Physics |
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1998年3月 |
Evaluation of electron trap levels in buried SiO2 by transient
photocurrent spectroscopy |
Jpn. J. Appl. Phys., Vol.37, pp.1274-1277 |
Y. Miura |
K. Hamada, T. Kitano and A. Ogura |
The Institute of Pure and Applied Physics |
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1998年3月 |
Precise Measurement of Strain in Thin Si film |
Jpn. J. Appl. Phys., Vol.37, pp.1282-1284 |
S. Kimura |
A. Ogura |
The Institute of Pure and Applied Physics |
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1998年5月 |
Extension of Dose Window for Low-Dose Separation by Implanted
Oxygen |
J. Electrochem. Soc., Vol.145, pp.1735-1737 |
A. Ogura |
|
The Electrochemical Society, Inc. |
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1998年6月 |
Infrared Study of Silicon oxide Formation in Silicon Wafers
Implanted with Oxygen |
Appl. Phys. Lett., Vol.72, pp.2853-2855 |
H. Ono |
T. Ikarashi and A. Ogura |
American Institute of Physics |
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1998年10月 |
Defect Analysis and H+ Split Silicon-on-Insulator Wafers by Photoluminescence
Spectroscopy and Transmission Electron Microscopy |
Jpn. J. Appl. Phys., Vol.37, pp.L1199-1201 |
M. Tajima |
A. Ogura, T. Karasawa and A. Mochizuki |
The Institute of Pure and Applied Physics |
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1999年4月 |
Formation of Buried Oxide Film at the Damage Peak Induced by
Oxygen Implantation into a Si Substrate |
Appl. Phys. Lett., Vol.74, pp. 2188-2190 |
A. Ogura |
|
American Institute of Physics |
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1998年12月 |
Structures and coalescence behavior of size-selected silicon
nanoclusters studied by surface-plasmon-polariton enhanced Raman spectroscopy |
J. Chem. Phys., Vol.110, pp.12161-12171 |
C. FJlix |
E.C. Honea, A. Ogura, C.A. Murray, K. Raghavachari, W.O.
Sprenger, M.F. Jarrold, W.L. Brown and D.R. Peal |
American Institute of Physics |
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