学術論文 20年〜21年 2024/5/30 更新
発行年月 タイトル 掲載紙名 第一著者 共著者 発行所 備考
2020年1月 Anisotropic biaxial stress evaluation in metal-organic chemical vapor deposition grown Ge1-xSnx mesa structure by oil-immersion Raman spectroscopy Thin Solid Films 697, 137797(2020) . http://www.ecsdl.org/jimages/spacer.gif,http://www.ecsdl.org/jimages/spacer.gif
Kazutoshi Yoshioka
Ryo Yokogawa, Atsushi Ogura Elsevier B.V. https://doi.org/10.1016/j.tsf.2020.137797
2020年2月 Width dependence of drain current and carrier mobility in gate-all-around multi-channel polycrystalline silicon nanowire transistors with 10nm width scale Japanese Journal of Applied Physics 59, 021004 (2020). Ki-Hyun Jang Takuya Saraya, Masaharu Kobayashi, Naomi Sawamoto, Atsushi Ogura, and Toshiro Hiramoto IOP Science https://doi.org/10.35848/1347-4065/ab6f2c
2020年2月 Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell Japanese Journal of Applied Physics 59, SGGF06 (2020). Takefumi Kamioka Yutaka Hayashi, Kazuhiro Gotoh, Ryo Ozaki, Kyotaro Nakamura, Motoo Morimura, Shimako Naitou, Noritaka Usami, Atsushi Ogura, and Yoshio Ohshita IOP Science  
2020年2月 Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs IEEE Transactions on Semiconductor Manufacturing PP(99):1-1(2020). Kiyoshi Takeuchi Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-ichi Nishizawa, Masanori Tsukuda, Munetoshi Fukui, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto, Takuya Saray, aKazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, and Kuniyuki Kakushima IEEE 10.1109/TSM.2020.2972369
2020年3月 The Physical and Chemical Properties of MoS2(1-x)Te2x Alloy Synthesized by Co-sputtering and Chalcogenization and Their Dependence on Fabrication Conditions   Yusuke Hibino Kota Yamazaki, Yusuke Hashimoto, Yuya Oyanagi, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudo, Hitoshi Wakabayashi, and Atsushi Ogura Materials Research Society DOI: 10.1557/adv.2020.170
2020年3月 Evaluation of MoS2 Films Fabricated by Metal-Organic Chemical Vapor Deposition Using a Novel Mo Precursor i-Pr2DADMo(CO)3 Under Various Deposition Conditions   K. Yamazaki Y. Hibino, Y. Oyanagi, Y. Hashimoto, N. Sawamoto, H. Machida, M. Ishikawa, H. Sudo, H. Wakabayashi, and A. Ogura Materials Research Society DOI: 10.1557/adv.2020.187
2020年4月 Stress evaluation induced by wiggling silicon nitride fine pattern using Raman spectroscopy Japanese Journal of Applied Physics 59, SIIF03-1-6 (2020) Masato Koharada Ryo Yokogawa, Naomi Sawamoto, Kazutoshi Yoshioka, and Atsushi Ogura IOP Science https://doi.org/10.35848/1347-4065/ab7e14
2020年4月 Temperature and polarity dependence of electrical properties of ZnO film on pyroelectric LiNbO3 single crystal Japanese Journal of Applied Physics 59, SIIG11-1-7 (2020) Yudai Yasuhara Kazunori Kurishima, Toyohiro Chikyow, Atsushi Ogura, and Takahiro Nagata IOP Science https://doi.org/10.35848/1347-4065/ab83df
2020年5月 Enlargement of grain size for MoS2 film fabricated by RF magnetron sputtering with additional DC bias by optimization of deposition parameters and its evaluation with Raman spectroscopy Japanese Journal of Applied Physics 59, 065502-1-8 (2020) Y. Oyanagi Y. Hibino, N. Sawamoto, H. Wakabayashi, and A. Ogura IOP Science https://doi.org/10.35848/1347-4065/ab9384
2020年6月 Phonon dispersion of bulk Ge-rich SiGe: inelastic X-ray scattering studies Japanese Journal of Applied Physics 59, 061003-1-6 (2020) Koji Usuda Yuya Oyanagi, Ryo Yokogawa, Hiroshi Uchiyama, Satoshi Tsutsui , Ichiro Yonenaga, and Atsushi Ogura IOP Science https://doi.org/10.35848/1347-4065/ab8e07
2020年6月 Quantification of Ge fraction using local vibrational modes in Raman spectra of silicon germanium by oil-immersion Raman spectroscopy Japanese Journal of Applied Physics 59, 075502-1-6 (2020) Ryo Yokogawa Haruki Takeuchi, and Atsushi Ogura IOP Science https://doi.org/10.35848/1347-4065/ab9589
2020年6月 Anomalous low energy phonon dispersion in bulk silicon-germanium observed by inelastic x-ray scattering Appl. Phys. Lett. 116, 242104-1-5 (2020) R. Yokogawa H. Takeuchi, Y. Arai, I. Yonenaga, M. Tomita, H. Uchiyama, T. Watanabe, and A. Ogura  American Insititute of Physics  https://doi.org/10.1063/5.0010506
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2020年7月 Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor Japanese Journal of Applied Physics 59, 115503-1-6 (2020) Ryo Yokogawa Hiroto Kobayashi, Yohichiroh Numasawa, Atsushi Ogura, Shin-ichi Nishizawa, Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Shinichi Suzuki, Munetoshi Fukui, Kiyoshi Takeuchi, and Toshiro Hiramoto IOP Science https://doi.org/10.35848/1347-4065/abc1d0
2020年9月 Anomalous excitation-power dependence of band-edge emission in Si involving radiation-induced defects Japanese Journal of Applied Physics 59, 106502-1-4 (2020) Shota Asahara Michio Tajima, Yuta Satake, and Atsushi Ogura IOP Science https://doi.org/10.35848/1347-4065/abb4aa
2020年10月 Evaluation of Phonon Dispersion Relation for Bulk Silicon Germanium by Inelastic X-ray Scattering ECS Transactions, 98 (5) 465-472 (2020) R. Yokogawa H. Takeuchi, Y. Arai, I. Yonenaga, H. Uchiyama, and A. Ogura The Electrochemical Society 10.1149/09805.0465ecst
2020年10月 Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy ECS Transactions, 98 (5) 291-300 (2020) R. Yokogawa M. Kurosawa, and A. Ogura The Electrochemical Society 10.1149/09805.0291ecst
2020年10月 Observation of an Unidentified Phonon Peak in SiGe Alloys and Superlattices Using Molecular Dynamics Simulation ECS Transactions, 98 (5) 533-546 (2020) S. Y. Y. Chung M. Tomita, R. Yokogawa, A. Ogura, and T. Watanabe The Electrochemical Society 10.1149/09805.0533ecst
2020年10月 Evaluation of Thermal Conductivity Characteristics in Polycrystalline Silicon - The Effect of Nanostructure in the Grains ECS Transactions, 98 (5) 437-446 (2020) Haruki Takeuchi Ryo Yokogawa, Kazuya Takahashi, Katsuhiko Komori, Tamotsu Morimoto, Naomi Sawamoto and Atsushi Ogura The Electrochemical Society 10.1149/09805.0437ecst
2020年10月 Evaluation of Thermal Expansion Coefficient in Ge1-x Snx Nanowire Using Reciprocal Space Mapping ECS Transactions, 98 (5) 481-490 (2020) G. Ogasawara, Y. Takahashi, R. Yokogawa, K. Yoshioka, I. Hirosawa, K. Suda, and A. Ogura The Electrochemical Society 10.1149/09805.0481ecst
2020年10月 Evaluation of Temperature and Germanium Concentration Dependence of EXAFS Oscillations in Si-Rich Silicon Germanium Thin Films ECS Transactions, 98 (5) 473-479 (2020) K. Yoshioka R. Yokogawa, M. Koharada, H. Takeuchi, G. Ogasawara, I. Hirosawa, T. Watanabe, and A. Ogura The Electrochemical Society 10.1149/09805.0473ecst
2020年11月 The Electronic and Physical Structure Evaluation of MoS2(1-x)Te2x Alloy Fabricated with Co-Sputtering and Post-Deposition Annealing in Chalcogen Ambient ECS Journal of Solid State Science and Technology,9 093018-1-5(2020) Yusuke Hibino Kota Yamazaki, Yusuke Hashimoto, Yosuke Otsuka, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Hitoshi Wakabayashi, and Atsushi Ogura The Electrochemical Society DOI: 10.1149/2162-8777/abcb6a]
2020年11月 Detection limit of carbon concentration measurement in Si for photoluminescence method after electron irradiation Japanese Journal of Applied Physics 59, 126501-1-5 (2020) Y. Satake Michio Tajima, Shota Asahara, and Atsushi Ogura IOP Science https://doi.org/10.35848/1347-4065/abc5d1
2020年12月 Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1-xO2/ZrO2 bilayer by atomic layer deposition Appl. Phys. Lett. 117, 232902-1-5 (2020) Takashi Onaya Toshihide Nabatame, Mari Inoue, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Takahiro Nagata, Jiyoung Kim, and Atsushi Ogura American Insititute of Physics https://doi.org/10.1063/5.0029709
2021年1月 Improvement in the passivation quality of titanium oxide thin films by doping with tantalum Thin Solid Films 720, 138509-1-3 (2021)  Seira Yamaguchi Hyunju Lee, Atsushi Ogura, Yoshio Ohshita Elsevier B.V. https://doi.org/10.1016/j.tsf.2020.138509
2021年1月 Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions Journal of Electronic Materials, 50(3), 1474-1481 (2021). Tappei Nishihara Kohei Onishi, Yoshio Ohshita, and Atsushi Ogura  Springer https://doi.org/10.1007/s11664-020-08702-w
2021年1月 Free-to-bound emission from interstitial carbon and oxygen defects (CiOi) in electron-irradiated Si Applied Physics Express 14, 011006-1-4 (2021) Michio Tajima Shota Asahara, Yuta Satake, and Atsushi Ogura IOP Science https://doi.org/10.35848/1882-0786/abd4c6
2021年2月 Thermal conductivity and inelastic X-ray scattering measurements on SiGeSn polycrystalline alloy Japanese Journal of Applied Physics 60, SBBF11-1-6 (2021). Yosuke Shimura Kako Iwamoto, Ryo Yokogawa, Motohiro Tomita, Hirokazu Tatsuoka, Hiroshi Uchiyama, and Atsushi Ogura IOP Science https://doi.org/10.35848/1347-4065/abdb83
2021年2月 Simulation study on lateral minority carrier transport in the surface inversion layer of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell Japanese Journal of Applied Physics 60, 026503-1-5 (2021) Takefumi Kamioka Yutaka Hayashi, Kazuhiro Gotoh, Tomohiko Hara, Ryo Ozaki, Motoo Morimura, Ayako Shimizu, Kyotaro Nakamura, Noritaka Usami , Atsushi Ogura, and Yoshio Ohshita IOP Science https://doi.org/10.35848/1347-4065/abdd02
2021年2月 Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3 Japanese Journal of Applied Physics 60, 030903-1-5 (2021) Riku Kobayashi Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi, and Atsushi Ogura IOP Science https://doi.org/10.35848/1347-4065/abde54
2021年3月 Influence of adsorbed oxygen concentration on characteristics of carbon-doped indium oxide thin-film transistors under bias stress Japanese Journal of Applied Physics 60, SCCM01-1-5 (2021) Riku Kobayashi Toshihide Nabatame, Takashi Onaya, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Kazuhito Tsukagoshi , and Atsushi Ogura IOP Science https://doi.org/10.35848/1347-4065/abe685
2021年3月 Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis APL Mater. 9, 031111-1-7 (2021). Takashi Onaya Toshihide Nabatame, Yong Chan Jung, Heber Hernandez-Arriaga, Jaidah Mohan, Harrison Sejoon Kim, Naomi Sawamoto, Chang-Yong Nam, Esther H. R. Tsai, Takahiro Nagata, Jiyoung Kim, and Atsushi Ogura AIP Publishing 10.1063/5.0035848
2021年4月 Effects of ZnxMn1-xS buffer layer on nonpolar AlN growth on Si (100) substrate Japanese Journal of Applied Physics 60, SCCG02-1-6 (2021) Masaya Morita Keiji Ishibash, Kenichiro Takahashi, Toyohiro Chikyow, Atsushi Ogura, and Takahiro Nagata IOP Science https://doi.org/10.35848/1347-4065/abf07a
2021年5月 Investigation of the Chemical Reaction between Silver Electrodes and Transparent Conductive Oxide Films for the Improvement of Fill Factor of Silicon Heterojunction Solar Cells ECS Journal of Solid State Science and Technology, 10 055013-1-6 (2021). Tappei Nishihara Kazuo Muramatsu, Kyotaro Nakamura, Yoshio Ohshita, Satoshi Yasuno, Hiroki Kanai, Yutaka Hara, Yusuke Hibino, Haruki Kojima, and Atsushi Ogura Published on behalf of ECS by IOP Publishing Limited 10.1149/2162-8777/abffae
2021年7月 Dependency of a localized phonon mode intensity on compositional cluster size in SiGe alloys AIP Advances 11, 075017-1-7 (2021). Sylvia Yuk Yee Chung Motohiro Tomita, Junya Takizawa, Ryo Yokogawa, Atsushi Ogura, Haidong Wang, and Takanobu Watanabe American Institute of Physics  https://doi.org/10.1063/5.0055307
2021年8月 Fabrication of Tantalum-Doped Titanium-Oxide Electron-Selective Contacts with High Passivation Quality ECS Journal of Solid State Science and Technology  10,  045009-1-6(2021). Seira Yamaguchi Hyunju Lee, Atsushi Ogura, Atsushi Masuda and Yoshio Ohshita Published on behalf of ECS by IOP Publishing Limited     DOI: 10.1149/2162-8777/abf759
2021年9月 Evaluation of correlation between fill factor and high mobility transparent conductive oxide film deposition temperature in the silicon heterojunction solar cells Materials Science in Semiconductor Processing 132, 05887-1-(2021). Tappei Nishihara Hiroki Kanai, YoshioOhshita, KyotaroNakamura, TakefumiKamioka, TomohikoHara, SeiraYamaguchi, MasatoKoharada, AtsushiOgura  Elsevier https://doi.org/10.1016/j.mssp.2021.105887
2021年10月 Synthesis, characterization and application of intracellular Ag/AgCl nanohybrids biosynthesized in Scenedesmus sp. as neutral lipid inducer and antibacterial agent Environmental Research 201,  111499-1- (2021). Mrinal Kashyap Kanchan Samadhiya, Atreyee Ghosh, Vishal Anand, Hyun-ju Lee, Naomi Sawamoto, Atsushi Ogura, Yoshio Ohshita, Parasharam M.Shirage, Kiran Bala  Elsevier     DOI: 10.1016/j.envres.2021.111499

https://doi.org/10.1016/j.envres.2021.111499
2021年10月 Evaluation of Mo(1-x)WxS2 Alloy Fabricated by Combinatorial Film Deposition ECS Transactions, 104 (3) 21-28 (2021) Shusei Hanafusa Yusuke Hashimoto, Keiji Ishibashi, Yusuke Hibino, Kota Yamazaki, Ryo Yokogawa, Hitoshi Wakabayashi, and Atsushi Ogura The Electrochemical Society 10.1149/10403.0021ecst
2021年10月 Effect of Growth Parameters on MoS2 Film Quality Deposited by Low-Temperature MOCVD Using I-Pr2DADMo(CO)3 and (t-C4H9)2S2 ECS Transactions, 104 (3) 3-15 (2021) Kirito Cho Kota Yamazaki, Yusuke Hibino, Yusuke Hashimoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Hitoshi Wakabayashi, Ryo Yokogawa, and Atsushi Ogura The Electrochemical Society 10.1149/10403.0003ecst
2021年11月 Atomic mass dependency of a localized phonon mode in SiGe alloys AIP Advances 11, 115225-1-10 (2021) Sylvia Yuk Yee Chung Motohiro Tomita, Ryo Yokogawa, Atsushi Ogura, and Takanobu Watanabe American Institute of Physics doi: 10.1063/5.0071699