学術論文 10〜11年 | 2013/7/1 更新 | ||||||
発行年月 | タイトル | 掲載紙名 | 第一著者 | 共著者 | 発行所 | 備考 | |
2010年3月 | Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar Cells |
Journal of ELECTRONIC MATERIALS, 39(6), 747-750 (2010). | MICHIO TAJIMA, | MASATOSHI IKEBE, YOSHIO OHSHITA, and ATSUSHI OGURA | TMS | ||
2010年3月 | Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy | Journal of ELECTRONIC MATERIALS, 39(6), 694-699 (2010). | DAISUKE KOSEMURA | MAKI HATTORI, TETSUYA YOSHIDA, TOSHIKAZU MIZUKOSHI, and ATSUSHI OGURA | TMS | ||
2010年4月 | Study of Charge Trap Sites in SiN Films by Hard X-Ray Photoelectron Spectroscopy | Jpn. J. Appl. Phys.,49, 04DD11-1-5 (2010). | Daisuke Kosemura | Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Maki Hattori, Daisuke Katayama, Tatsuo Nishita, Yoshihiro Hirota2Masatake Machida, Jin-Young Son, Tomoyuki Koganezawa, Ichiro Hirosawa, and Atsushi Ogura | The Institute of Pure and Applied Physics | ||
2010年4月 | Evaluation of anisotropic biaxial stress by Raman spectroscopy with a high NA immersion objective lens | Jpn. J. Appl. Phys.,49, 04DA21-1-5 (2010). | Daisuke Kosemura | Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Ryosuke Shimidzu, and Atsushi Ogura | The Institute of Pure and Applied Physics | ||
2010年4月 | Investigation of Thermal Stability of TiN Film Formed by Atomic
Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor |
Jpn. J. Appl. Phys.,49, 04DA16-1-6 (2010). | Tetsuro Hayashida | Kazuhiko Endo Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Shin-ichi O’uch, Kunihiro Sakamoto, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, and Meishoku Masahara | The Institute of Pure and Applied Physics | ||
2010年4月 | Suppression of SiC surface roughening during high-temperature annealing by atmospheric control using purified Ar gas | J. Mater. Res., Vol. 25, No. 4, Apr 2010 | Atsushi Ogura | Daisuke Kosemura, and Shingo Kinoshita | Materails Research Society | ||
2010年4月 | Suppression mechanism of volume shrinkage for SOG film by plasma treatment | ![]()
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K. Nagata | D. Kosemura, M. Takei, H. Akamatsu, M. Hattori, T. Koganezawa, M. Machida, J. Son, I. Hirosawa, T. Nishita, T. Shiozawa, D. Katayama, Y. Sato, Y. Hirotac and A. Oguraa | The Electrochemical Society | ||
2010年4月 | Cross-sectional UV-Raman measurement for obtaining
two-dimensional channelstress profile in extremely high-performance pMOSFETs |
ECS Transactions, 28 (1) 27-32 (2010) | H. Akamatsu | M. Takei, D. Kosemura, K. Nagata, S. Mayuzumi, S. Yamakawa, H. Wakabayashi, A. Ogura | The Electrochemical Society | ||
2010年5月 | Structural Change by Annealing Process at S9 Grain Boundaries in Multicrystalline Silicon Substrate for Solar Cells | Electrochem. Solid-State Lett., Vol. 13, Issue 7, pp. B79-B82 (2010) | Tomihisa Tachibana, | Junichi Masuda, Atsushi Ogura, Yoshio Ohshita, and Koji Arafune | The Electrochemical Society | ||
2010年5月 | Transverse-Optical Phonons Excited in Si using a High-Numerical-Aperture Lens | Appl. Phys. Lett., 96, 212106(3pages) (2010). | Daisuke Kosemura | Atsushi Ogura | American Institute of Physics | ||
2010年5月 | Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory |
Jap. J. App. Phys., 49, 05FF06(1-2) (2010) | Hideaki Machida | Seichi Hamada, Takafumi Horiike, Masato Ishikawa, Atsushi Ogura, Yoshio Ohshita, and Takayuki Ohba | The Institute of Pure and Applied Physics | ||
2010年6月 | Channel Strain Analysis in High-Performance Damascene-Gate pMOSFETsusing High-Spatial Resolution Raman Spectroscopy | J. App. Phys., 107, 124507 (6pages) (2010). | Munehisa Takei | Daisuke Kosemura, Kohki Nagata, Hiroaki Akamatsu, Satoru
Mayuzumi, Shinya Yamakawa, Hitoshi Wakabayashi and Atsushi Ogura |
American Institute of Physics | ||
2010年6月 | Suppresion of Fermi Level Pinning and Flat Band Voltage Shift by Inserting Diamond-Like Carbon at a High-k/SiO2 Interface in a Gate Stack Structure | Jpn. J. Appl. Phys., 49, 06GH03(1-4), (2010). | Yuta Iwashita | Tetsuya Adachi, Kenji Itaka, Atsushi Ogura, and Toyohiro Chikyow | The Japan Society of Applied Physics | ||
2010年10月 | Combinatorial investigation of ZrO2-based dielectric materials
for DRAM capacitors |
ECS Transactions, 33, 339-346 (2010) | Y. Kiyota | Y. Iwashitaa, K.Itaka, T.Adachi, T. Chikyow and A. Oguraa | The Electrochemical Society | ||
2010年10月 | Quantitative analysis of impurities in solar-grade Si by photoluminescence spectroscopy around 20 K | Takaaki Iwai | Michio Tajima, Atsushi Ogura | Wiley-VCH Verlag GmbH & Co | |||
2010年11月 | Microscopic Distributions of Light Elements and Their Precipitates in Multicrystalline Silicon for Solar Cells | Jap. J. App. Phys., 49, 110202(1-3) (2010) | Haruhiko Ono | Takahide Ishizuka, Chihiro Kato, Koji Arafune, Yoshio Ohshita and Atsushi Ogura | The Japan Society of Applied Physics | ||
2011年1月 | Behavior of nickel silicide in multi-crystalline silicon for solar cells | Physics Procedia 11, 163–166 (2011) | T.Tachibana | T. Sameshima, K. Arafune, Y. Ohshita, and A. Ogura | Elsevier B.V. | ||
2011年1月 | Evaluation of Strained-Silicon by Electron Backscattering
Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation |
Jap. J. App. Phys., 50, 010111(1-8) (2011) | Motohiro Tomita | Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, and Atsushi Ogura | The Japan Society of Applied Physics | ||
2011年2月 | Evaluation of Strained Silicon by Electron Back Scattering
Pattern Compared with Raman Measurement and Edge Force Model Calculation |
Key Engineering Materials 470、123-128 (2011) | Motohiro Tomita | Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu and Atsushi Ogura | Trans Tech Publications, Switzerland | ||
2011年4月 | Material Research on High-Quality Passivation Layers with
Controlled Fixed Charge for Crystalline Silicon Solar Cells |
Jpn. J. Appl. Phys. 50, 04DP09 (2011) | Tomihisa Tachibana, | Takashi Sameshima, Yuta Iwashita, Yuji Kiyota, Toyohiro Chikyow, Haruhiko Yoshida, Koji Arafune, Shin-ichi Satoh, and Atsushi Ogura | The Japan Society of Applied Physics | ||
2011年4月 | Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An nþ-Polycrystalline Silicon Capping Layer and Its Application to 20nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors | Jpn. J. Appl. Phys., 50, 04DC14(1-5) (2011) | Takahiro Kamei | Yongxun Liu, Kazuhiko Endo, Shinichi O’uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Tetsuro Hayashida, Takashi Matsukawa, Kunihiro Sakamoto, Atsushi Ogura, and Meishoku Masahara1 | The Japan Society of Applied Physics | ||
2011年4月 | Quantitative Analysis of Stress Relaxation in Transmission Electron Microscopy Samples by Raman Spectroscopy with a High-Numerical Aperture Lens | Jpn. J. Appl. Phys. 50, 04DA06(1-5) (2011). | D. Kosemura | A. Ogura | The Japan Society of Applied Physics | ||
2011年6月 | Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition | Jpn. J. Appl. Phys. 50, 061301(1-5) (2011) | Munehisa Takei | Daisuke Kosemura, Hiroaki Akamatsu, Kohki Nagata, and Atsushi Ogura | The Japan Society of Applied Physics | ||
2011年6月 | Combinatorial Investigation of ZrO2-Based Dielectric
Materials for Dynamic Random-Access Memory Capacitors |
Jpn. J. Appl. Phys. 50, 06GH12(1-4) (2011) | Yuji Kiyota | Kenji Itaka, Yuta Iwashita, Tetsuya Adachi, Toyohiro Chikyow, and Atsushi Ogura | The Japan Society of Applied Physics | ||
2011年10月 | Complementary Distribution of NN and NNO Complexes in Cast-Grown Multicrystalline Silicon for Photovoltaic Cells | Applied Physics Express 4, 115601(1-3) (2011) | Hiroki Kusunoki | Takahide Ishizuka, Atsushi Ogura, and Haruhiko Ono1 | The Japan Society of Applied Physics |