学術論文 08〜09年 |
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2011/4/11 更新 |
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発行年月 |
タイトル |
掲載紙名 |
第一著者 |
共著者 |
発行所 |
備考 |
2008年2月 |
Evaluation of strain in Si-on-insulator substrate induced by Si3N4 capping film |
Jpn. J. Appl. Phys., 47, pp.1465-1468(2008). |
Atsushi Ogura, |
Daisuke Kosemura, Yasuto Kakemura, Tetsuya Yoshida, Hidetsugu
Uchida, Nobuyoshi Hattori, and Masaki Yoshimaru |
The Institute of Pure and Applied Physics |
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2008年2月 |
Evaluation of poly-Si thin film crystallized by solid green
laser annealing using UV/visible Raman spectroscopy |
Journal of Materials Science: Materials in Electronics, 19,
pp.S122-S126 (2008). |
Atsushi Ogura |
Yasuto Kakemura,
Daisuke Kosemura, Tetsuya Yoshida, Miyuki Msaki, Kenichirou Nishida, Ryusuke
Kawakami and Naoya Yamamoto |
Springer |
|
2008年2月 |
Microscopic and Spectroscopic Mapping of
Dislocation-Related Photoluminescence in Multicrystalline Silicon Wafers |
Journal of Materials Science: Materials in Electronics, 19,
pp.S132-134 (2008). |
Masaaki Inoue |
Hiroki Sugimoto, Michio Tajima, Yoshio Ohshita and Atsushi Ogura |
Springer |
ISSBN:0921-5107 |
2008年2月 |
Characterization of strained Si wafers by X-ray diffraction
techniques |
Journal of Materials Science: Materials in Electronics, 19,
pp.S189-S193 (2008). |
Takayoshi Shimura |
Kohta Kawamura, Masahiro Asakawa, Heiji Watanabe, Kiyoshi
Yasutake, Atsushi Ogura, Kazunori Fukuda, Osami Sakata, Shigeru Kimura,
Hiroki Edo, Satoshi Iida,
Masataka Umeno |
Springer |
ISSBN:0921-5107 |
2008年5月 |
Evaluation and Control of Strain in Si Induced by Patterned SiN
Stressor |
ECS Transactions, 13 (2) 263-269 (2008) |
Hiroyuki Saitoh |
Daisuke Kosemura, Yasuto Kakemura, Tetsuya Yoshida, Munehisa
Takei, and Atsushi Ogura |
The Electrochemical Society |
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2008年5月 |
Transconductance Enhancement by Utilizing Pattern Dependent
Oxidation in Silicon Nanowire Field-Effect Transistors
|
ECS Transactions, 13 (1) 351-358 (2008) |
Aya Seike |
Ikushin Tsuchida, Yuuki Sugiura, Daisuke Kosemura, Atsushi Ogura,
Takanobu Watanabe, and Iwao Ohdomari |
The Electrochemical Society |
|
2008年5月 |
Observation of Crystalline Imperfections in Supercritical
Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray
Topography |
ECS Transactions, 13 (2) 75-82 (2008) |
Takayoshi
Shimura |
Tomoyuki Inoue, Yuki Okamoto, Takuji Hosoi, Hiroki Edo, Satoshi
Iida, Atsushi Ogura, and Heiji Watanabe |
The Electrochemical Society |
|
2008年5月 |
Chemical Vapor Deposition Pt-Ni alloy Using Pt(PF3)4 and
Ni(PF3)4 |
ECS Transactions, 13 (1) 433-439 (2008) |
Masato
Ishikawa, |
Ikuyo Muramoto, Hideaki Machida, Satoshi Imai, Atsushi Ogura, and
Yoshio Ohshita |
The Electrochemical Society |
|
2008年6月 |
Characterization of Strain for High-Performance
Metal-Oxide-Semiconductor Field-Effect-Transistor |
Jpn. J. Appl. Phys., 47, pp.2538-2543(2008). |
Daisuke Kosemura |
Yasuto Kakemura, Tetsuya Yoshida, Atsushi Ogura, Masayuki Kohno,
Tatsuo Nishita and Toshio Nakanishi |
The Institute of Pure and Applied Physics |
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2008年6月 |
Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature
Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect
on Device Characteristics |
Jpn. J. Appl. Phys., 47, pp.2433-2437(2008). |
Yongxun Liu |
Tetsuro Hayashida, Takashi Matsukawa, Kazuhiko Endo, Meishoku
Masahara, Shinich O'uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada,
Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, and Eiichi Suzuki |
The Institute of Pure and Applied Physics |
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2008年6月 |
W chemical-vapor deposition using (i-C3H7C5H4)2WH2 |
J. Vacume Science & Tech. , 26, pp561.-564 (2008). |
A. Ogura |
S. Imai, T. Kagawa, H. Kurozaki, M. Ishikawa, I. Muramoto, H.
Machida, and Y. Ohshita |
Elsevier B.V. |
Seleted paper for Virtual Journal of Nanoscale Science &
Technology -- June 23, 2008 |
2008年7月 |
Evaluation of Si3N4/Si interface by UV Raman spectroscopy |
Applied Surface Science, 254,pp.6229-6231 |
A. Ogura |
T. Yoshida, D. Kosemura, Y. Kakemura, T. Aratani, M. Higuchi, S.
Sugawa, A. Teramoto, T. Ohmi, T. Hattori |
Elsevier B.V. |
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2008年10月 |
Evaluation and Control of Strain in Si Induced by Patterned SiN
Stressor |
ECS Transactions, 16 (10) 539-543 (2008) |
Takayoshi
Shimura |
T. Inoue, Y. Okamoto, Takuji Hosoi, Atsushi Ogura, O. Sakata, S.
Kimura, H. Edo, S. Iida, and H. Watanabe |
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2008年10月 |
Study on Stress Memorization by Argon Implantation and
Annealing |
ECS Transactions, 16 (10) 117-124 (2008) |
Masafumi Hino |
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The Electrochemical Society |
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2008年12月 |
Evaluation of super-critical thickness strained-Si on insulator
(sc-SSOI) substrate |
Solid State Electronics, 52, pp.1845-1848 (2008) |
A. Ogura |
T. Yoshida, D. Kosemura, Y. Kakemura, M. Takei, H. Saito, T.
Shimura, T. Koganesawa, and I. Hirosaw |
Elsevier B.V. |
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2009年1月 |
Evaluation and control of strain in Si induced by patterned SiN
stressor |
Electrochem. Solid-State Lett., 12, Issue 4, pp. H117-H119
(2009). |
A. Ogura |
H. Saitoh, D. Kosemura, Y. Kakemura, T. Yoshida, and M. Takei, T.
Koganezawa and, I. Hirosawa |
The Electrochemical Society, Inc. |
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2009年5月 |
Evaluation of local strain in Si using UV-Raman spectroscopy |
Materials Science and Engineering B, 159–160 pp.206–211
(2009) |
Atsushi Ogura |
Daisuke Kosemura, Munehisa Takei, Hidetsugu Uchida, Nobuyoshi
Hattori, and Masaki Yoshimaru, Satoru Mayuzumi, and Hitoshi Wakabayashi |
Elsevier B.V. |
|
2009年5月 |
A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the
Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar
Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type
Metal–Oxide–Semiconductor Field-Effect Transistors |
Jpn. J. Appl. Phys., 48, 05DC01 (6 pages) (2009). |
Tetsuro Hayashida |
Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinich O’uchi,
Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi
Yamauchi, Eiichi Suzuki, Atsushi Ogura, and Meishoku Masahara |
The Institute of Pure and Applied Physics |
|
2009年5月 |
Improvement of
CVD SiO2 by Post Deposition Microwave Plasma Treatment |
ECS Transactions, 19 (2) 55-66 (2009) |
Kohki Nagata |
H. Akamatsu, D. Kosemura, T. Yoshida, M. Takei, M. Hattori, A.
Ogura, T. Koganezawa, M. Machida, J. Son, I. Hirosawa, T. Shiozawa, D.
Katayama, Y. Sato and Y. Hirota |
The Electrochemical Society |
|
2009年5月 |
UV-Raman
Spectroscopy Study on SiO2/Si Interface |
ECS Transactions, 19 (9) 45-51 (2009) |
Maki Hattori |
Tetsuya Yoshida, Daisuke Kosemura, Atsushi Ogura, Tomoyuki Suwa,
Akinobu Teramoto, Takeo Hattori, and Tadahiro Ohmi |
The Electrochemical Society |
|
2009年6月 |
Study of Strain Induction for Metal–Oxide–Semiconductor
Field-Effect Transistors using Transparent Dummy Gates and Stress Liners |
Jpn. J. Appl. Phys., 48, 066508(7pages) (2009). |
Daisuke Kosemura |
Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Masayuki Kohno,
Tatsuo Nishita, Toshio Nakanishi, and Atsushi Ogura |
The Institute of Pure and Applied Physics |
|
2009年11月 |
Channel-Stress Enhancement for Scaled pMOSFETs by using
Damascene Gate with Top-Cut Compressive Stress Liner and eSiGe |
IEEE Trans. Electron Devices, vol. 56, pp. 2778, Nov. 2009. |
Satoru Mayuzumi |
Shinya Yamakawa, Daisuke Kosemura, Munehisa Takei, Yasushi
Tateshita, Hitoshi Wakabayashi, Member, IEEE, Masanori Tsukamoto, Terukazu
Ohno, Atsushi Ogura and Naoki Nagashima |
IEEE |
|
2009年12月 |
Study on the Degradation of p-n Diode Characteristics Caused by
Small Angle Grain Boundary in Multi-Crystalline Silicon Substrate for Solar
Cells |
Jpn. J. Appl. Phys., 48, 121202 (2009). |
Tomihisa Tachibana |
Keita Imai, Junichi Masuda, Atsushi Ogura, Yoshio Ohshita, Koji
Arafune, Michio Tajima |
The Institute of Pure and Applied Physics |
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