学術論文 00〜03年 |
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2011/4/11 更新 |
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発行年月 |
タイトル |
掲載紙名 |
第一著者 |
共著者 |
発行所 |
備考 |
2000年6月 |
Evaluation of buried oxide formation in low-dose SIMOX process |
Appl. Surf. Sci., Vol.159-160, pp.104-110 |
A. Ogura |
H. Ono |
Elsevier B.V. |
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2000年2月 |
Annealing Properties of Defects During Si-on-Insulator
Fabrication by Low-Dose Oxygen Implantation Studied by Monoenergetic Positron
Beams |
J. Appl. Phys., Vol.87,
pp.1659-1665 |
A. Uedono |
S. Tanigawa, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, and T.
Mikado |
American Institute of Physics |
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2000年6月 |
In-diffusion and out-diffusion of oxygen during the buried oxide
formation in oxygen-implanted silicon |
J. Appl. Phys., Vol.87, pp.7782-7787 |
H. Ono |
A. Ogura |
American Institute of Physics |
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2000年7月 |
Microstructure of Cu Film Sputter-Deposited on TiN |
J. Vac. Sci. & Tech. A, Vol.18(6), pp.2854-2857 |
A. Furuya |
Y. Ohshita and A. Ogura |
American Vacuum Society |
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2000年12月 |
Low-pressure chemical vapor deposition of TaCN films by
pyrolysis of ethylamido-tantalum |
J. Cryst. Growth Vol.220, pp.604-609 |
Y. Ohshita |
A. Ogura, A. Hoshino, S. Hiiro, and H. Machida |
Elsevier B.V. |
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2001年3月 |
Evaluation of SOI Substrates by Positron Annihilation |
Jpn. J. Appl. Phys. Vol.40, pp.2903-2906 |
A. Uedono |
A. Ogura, and S. Tanigawa |
The Institute of Pure and Applied Physics |
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2001年7月 |
Depth profile of As and B implanted into Si-on-insulator
substrates |
Thin Solid Films, Vol.397, pp.56-62 |
A. Ogura |
M. Hiroi |
Elsevier B.V. |
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2001年10月 |
Formation of Buried Oxide Layer in Si Substrates by Oxygen
precipitation at Implantation Damage of Light Ions |
Jpn. J. Appl. Phys. Vol.40, pp.L1075-1077 |
A. Ogura |
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The Institute of Pure and Applied Physics |
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2001年6月 |
Photoluminescence Analysis of {311} Interstitial Defects in
Wafers Synthesized by Separation by Implanted Oxygen |
Jpn. J. Appl. Phys. Vol.40, pp.L567-569 |
J. Takiguchi |
M. Tajima, A. Ogura, S. Ibuka, and Y. Tokumaru |
The Institute of Pure and Applied Physics |
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2001年11月 |
HfO2 growth by low-pressure chemical vapor deposition using
the Hf (N (C2H5) 2) 4 /O2 gas system |
J. Crystal Growth, Vol.233,
pp.292-297 |
Y. Ohshita |
A. Ogura, A. Hoshino, S. Hiiro, and H. Machida |
Elsevier B.V. |
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2001年12月 |
Oxygen-Related Defects in Low-Dose Separation-by-Implanted
Oxygen (SIMOX) Wafers Probed by Monoenergetic Positron Beams |
J. Appl. Phys., Vol.90, pp.6026-6031 |
A. Uedono |
Z. Q. Chen, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, and T.
Mikado |
American Institute of Physics |
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2002年2月 |
Effects of deposition conditions on step coverage quality in
low-pressure chemical vapor deposition of HfO2 |
J. Crystal Growth, Vol.235, pp.365-370 |
Y. Ohshita |
A. Ogura, A. Hoshino, T. Suzuki, and H. Machida |
Elsevier B.V. |
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2002年3月 |
Formation of Epitaxially Ordered SiO2 in Oxygen-implanted Silicon during Thermal Annealing |
J. Cryst. Growth, Vol.236, pp.37-40 |
T. Shimura |
T. Hosoi, K. Fukuda, M. Umeno, and A. Ogura |
Elsevier B.V. |
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2002年5月 |
Defects in silicon-on-insulator wafers and their hydrogen
interaction studied by monoenergetic positron beams |
J. Appl. Phys., Vol.91, pp.6488-6492 |
A. Uedono |
Z. Q. Chen, A. Ogura, R. Suzuki, T. Ohdaira, and T. Mikado |
American Institute of Physics |
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2002年3月 |
Using tetrakis-diethylamido-hafnium for HfO2-thin-film
growth in low-pressure chemical-vapor deposition |
Thin Solid Films., Vol.406, pp.215-218 |
Y. Ohshita |
A. Ogura, A. Hoshino, S. Hiiro, T.Suzuki, and H. Machida |
Elsevier B.V. |
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2002年5月 |
Hf1-xSixO2 deposition by metal organic chemical vapor deposition
using the Hf(NEt2)4/SiH(NEt2)3/O2 gas system |
Thin Solid Films, Vol.416, pp.208-211 |
Y. Ohshita |
A. Ogura, M. Ishikawa, A. Hoshino, S. Hiiro, T. Suzuki, and H.
Machida |
Elsevier B.V. |
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2001年7月 |
MOCVD precursors for Ta and Hf compound films |
J. Cryst. Growth, Vol.237-239, pp.586-590 |
H. Machida |
A. Hoshino, T. Suzuki, A. Ogura, and Y. Ohshita |
Elsevier B.V. |
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2003年6月 |
Formation of Partterned Buried Insulating Layer in Si Substrates
by He+
implantation and Annealing in Oxidation Atmosphere |
Appl. Phys. Lett. Vol.82, pp.4480-4482 |
A. Ogura |
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American Institute of Physics |
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2003年5月 |
Evaluation of HfO2 film structures deposited by MOCVD using Hf(N(C2H5)2)4/O2 gas system |
Thin Solid Films, Vol.441, pp.161-164 |
A. Ogura |
Y. Ohshita, A. Hoshino, and H. Machida |
Elsevier B.V. |
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2003年6月 |
Tris-diethylamino-silane decomposition due to
tetrakis-diethylamido-hafnium in Hf1-xSixO2 chemical vapor deposition |
Jpn. J.Appl. Phys., Vol.42, pp.L578-580 |
Y. Ohshita |
A. Ogura, T. Kada, and H. Machida |
The Institute of Pure and Applied Physics |
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