| 学術論文 14〜15年 | 2016/12/26 更新 | ||||||
| 発行年月 | タイトル | 掲載紙名 | 第一著者 | 共著者 | 発行所 | 備考 | |
| 2014年1月 | Analysis of inhomogeneous dislocation distribution in multicrystalline Si | Solid State Phenomena, 205-206, 77-81 (2014). | 
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R. R. Prakash, J. Y. Li, K. Jiptner, Y. Miyamura, H. Harada, A. Ogura, and T. Sekiguchi |
Trans Tech Publications, Switzerland | ||
| 2014年1月 | 10 cm diameter mono cast Si growth and its characterization | Solid State Phenomena, 205-206, 89-93 (2014). | Y. Miyamura | H. Harada, K. Jiptner, J. Chen, R.R. Prakash, J.Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, and K. Kakimoto | Trans Tech Publications, Switzerland | ||
| 2014年1月 | Nanocrystalline-Si-dot multi-layers fabrication by chemical
vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects |
AIP ADVANCES 4, 017133 (2014). | Daisuke Kosemura | Yuki Mizukami, Munehisa Takei, Yohichiroh Numasawa, Yoshio Ohshita, and Atsushi Ogura | American Institute of Physics | ||
| 2014年2月 | Detailed study of the effects of interface properties of
ozone-based atomic layer deposited AlOx on the surface passivation of crystalline silicon |
Jap. J. App. Phys. 53, 04ER06 (2014). | Hyunju Lee | Naomi Sawamoto, Norihiro Ikeno, Koji Arafune, Haruhiko Yoshida, Shin-ichi Satoh, Toyohiro Chikyow, and Atsushi Ogura | The Japan Society of Applied Physics | ||
| 2014年2月 | Investigation on antireflection coating for high resistance to potential-induced degradation | Jap. J. App. Phys. 53, 03CE001 (2014). | Ken Mishina | Atsufumi Ogishi, Kiyoshi Ueno, Takuya Doi, Kohjiro Hara, Norihiro Ikeno, Daisuke Imai, Tetsuya Saruwatari, Makoto Shinohara, Toshiharu Yamazaki, Atsushi Ogura, Yoshio Ohshita, and Atsushi Masuda | The Japan Society of Applied Physics | ||
| 2014年2月 | Evaluation of phonon confinement in ultrathin-film silicon-on-insulator by Raman spectroscopy | Jap. J. App. Phys. 53, 032401 (2014). | Kohki Nagata | Munehisa Takei, Atsushi Ogura, Ken Uchida | The Japan Society of Applied Physics | ||
| 2014年3月 | Nickel distribution and recombination activity in as-grown and annealed multicrystalline silicon | Jap. J. App. Phys. 53, 04ER20 (2014). | Takuto Kojima | TomihisaTachibana, Nobuaki Kojima, Yoshio Ohshita, Koji Arafune, Atsushi Ogura ,and Masafumi Yamaguchi | The Japan Society of Applied Physics | ||
| 2014年4月 | Electrical field analysis of metal-surface plasmon resonance using a biaxially strained Si substrate | J. Raman Spectrosc. 45, 414–417(2014) | Daisuke Kosemura | Siti Norhidayah binti CheMohd Yusoff and Atsushi Ogura | John Wiley & Sons, Ltd. | ||
| 2014年4月 | High-resolution X-ray microdiffraction from a locally strained SOI with a width of 150 nm | Journal of Physics: Conference Series, 502 (2014) 012026 | Y Imai |
S Kimura, D Kosemura and A Ogura |
IOP Publishing | ||
| 2014年4月 | Photoluminescence Analysis of Oxygen Precipitation around
Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers |
Acata Physica Polonica A, 125, 1010-1012 (2014). | G. Kato | M. Tajima, F. Okayama, S. Tokumaru, R. Sato, H. Toyota and A. Ogura | Polish Academy of Science Institute of Physics | ||
| 2014年7月 | Polarized photoluminescence imaging analysis around small-angle grain boundaries in multicrystalline silicon wafers for solar cells | Jap. J. App. Phys. 53, 080303 (2014). | Gen Kato | Michio Tajima, Hiroyuki Toyota, and Atsushi Ogura | The Japan Society of Applied Physics | ||
| 2014年7月 | Molecular dynamics study on the formation of dipole layer at high-k/SiO2 interfaces | Jap. J. App. Phys. 53, 08LB02 (2014). | Ryo Kuriyama | Masahiro Hashiguchi, Ryusuke Takahashi, Kosuke Shimura, Atsushi Ogura, Shinichi Satoh, Takanobu Watanabe | The Japan Society of Applied Physics | ||
| 2014年10月 | Room-temperature photoluminescence evaluation of small-angle grain boundaries in multicrystalline silicon | Jap. J. App. Phys. 53, 112401 (2014). | Masaki Funakoshi | Norihiro Ikeno, Tomihisa Tachibana, Yoshio Ohshita, Koji Arafune, and Atsushi Ogura | The Japan Society of Applied Physics | ||
| 2014年10月 | Ge homoepitaxial growth by metal–organic chemical vapor deposition using t-C4H9GeH3 | Jap. J. App. Phys. 53, 110301 (2014). | Kohei Suda | Seiya Ishihara, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Yoshio Ohshita, and Atsushi Ogura | The Japan Society of Applied Physics | ||
| 2014年10月 | Evaluation of Anisotropic Biaxial Stress in Thin Strained-SiGe Layer Using Surface Enhanced Raman Spectroscopy | ECS Transactions, 64, 841-847 (2014). | S. Yamamoto | D. Kosemura, M. Tomita, S. Che Mohd Yusoff, T. Kijima, R. Imaib, K. Takeuchi, R. Yokogawa, K. Usuda, and A. Ogura | Electrochemical Society | ||
| 2014年10月 | Anisotropic strain evaluation in the finite Si area by surface plasmon enhanced Raman spectroscopy | ECS Transactions, 64, 67-77 (2014). | A. Ogura | D. Kosemura | Electrochemical Society | ||
| 2014年10月 | Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD | ECS Transactions, 64, 697-701 (2014). | K. Suda | S. Ishihara, N. Sawamoto, H. Machida, M. Ishikawa, H. Sudoh, Y. Ohshita, and A. Oguraa | Electrochemical Society | ||
| 2014年10月 | Molecular Dynamics Simulation of Dipole Layer Formation at High-k/SiO2 Interfaces |
ECS Transactions, 64, 3-15 (2014). | T. Watanabe | R. Kuriyama, M. Hashiguchi, R. Takahashi, K. Shimura, A. Ogura, and S. Satoh | Electrochemical Society | ||
| 2014年10月 | Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor | ECS Transactions, 64, 345-351 (2014). | Kazunori Kurishim | Toshihide Nabatame, Maki Shimizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyo, and Atsushi Ogura | Electrochemical Society | ||
| 2015年3月 | Ironrelated solar cell instability :Imaging analysis and impact
on cell performance |
Solar Energy Materials & Solar Cells 138, 96–101(2015). | M.C. Schubert | M. Padilla, B. Michl, L. Mundt, J. Giesecke, J. Hohl-Ebinger, J. Benick, W. Warta, M. Tajima, A. Ogura | ElsevierB.V. | ||
| 2015年3月 | Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3 | ECS J. Solid State Sci. 4, 152-154 (2015). | Kohei Suda | Takahiro Kijima, Seiya Ishihara, Naomi Sawamoto, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Yoshio Ohshita, and Atsushi Ogura | Electrochemical Society | ||
| 2015年3月 | Advantage in solar cell efficiency of high-quality seed cast mono Si ingot | App. Phys.s Express 8, 062301(1-3) (2015) | Yoshiji Miyamura | Hirofumi Harada, Karolin Jiptner, Satoshi Nakano, Bing Gao, Koichi Kakimoto, Kyotaro Nakamura, Yoshio Ohshita5 Atsushi Ogura, Shin Sugawara, and Takashi Sekiguchi | IOP Science | ||
| 2015年3月 | Evaluation of Anisotropic Biaxial Stress in Si1-xGex/Ge
Mesa-Structure by Oil-immersion Raman Spectroscopy |
ECS Trans. 66, 39-45(2015). | S. Yamamoto | K. Takeuchi, R. Yokogawa, M. Tomita, D. Kosemura, K. Usuda, and A. Ogura | Electrochemical Society | ||
| 2015年3月 | Oil-Immersion Raman Spectroscopy for c-Plane GaN on Si and Al2O3 Substrates | ECS Trans. 66, 119-126(2015). | Ryosuke Imai | Daisuke Kosemura and Atsushi Ogura | Electrochemical Society | ||
| 2015年3月 | On the Origin of the Gate Oxide Failure Evaluated by Raman Spectroscopy | ECS Trans. 66, 237-234(2015). | Ryo Yokogawa | Motohiro Tomita, Toshikazu Mizukoshi, Takehiro Hirano, Kenichiro Kusano, Katsuhiro Sasaki and Atsushi Ogura | Electrochemical Society | ||
| 2015年3月 | Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs | Jpn. J. App. Phys., 54, 04DN08（１-4) (2015). | Takumi Ohashi | Kohei Suda, Seiya Ishihara, Naomi Sawamoto, Shimpei Yamaguchi, Kentaro Matsuura, Kuniyuki Kakushima, Nobuyuki Sugii, Akira Nishiyama, Yoshinori Kataoka, Kenji Natori, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, and Hitoshi Wakabayashi | IOP Science | ||
| 2015年6月 | Evaluation of Sputtering Deposited 2-Dimensional MoS2 Film by Raman Spectroscopy | Proc of Mat. Res. Soc., 1781, 563(pp.1-6) (2015). | S. Ishihara | K. Suda, Y. Hibino, N. Sawamoto, T. Ohashi, S. Yamaguchi, K. Matsuura, H. Machida, M. Ishikawa, H. Sudoh, H. Wakabayashi, and A. Ogura | Cambridge University Press | ||
| 2015年6月 | Structural Analyses of Thin SiO2 Films Formed by Thermal Oxidation of Atomically Flat Si Surface by Using Synchrotron Radiation X-Ray Characterization |
ECS J. Solid State Sci. 4, N96-N98 (2015). | Kohki Nagata | Atsushi Ogura, Ichiro Hirosawa, Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori and Tadahiro Ohmid | Electrochemical Society | ||
| 2015年7月 | Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation | Jpn. J. Appl. Phys. 54, 08KD12_1-6 (2015) | Ken Mishina | Atsufumi Ogishi, Kiyoshi Ueno, Sachiko Jonai, Norihiro Ikeno, Tetsuya Saruwatari, Kohjiro Hara, Atsushi Ogura, Toshiharu Yamazaki, Takuya Doi, Makoto Shinohara, and Atsushi Masuda | IOP Science | ||
| 2015年7月 | X-ray evaluation of electronic and chemical properties and film structures in SiN passivation layer on crystalline Si solar cells | Jpn. J. Appl. Phys. 54, 08KD14_1-4 (2015) | Yoshihiro Yamashita | Norihiro Ikeno, Tomihisa Tachibana, Yoshio Ohshita, and Atsushi Ogura | IOP Science | ||
| 2015年7月 | Surface passivation of crystalline silicon by sputtered AlOx/AlNx stacks toward low-cost high-efficiency silicon solar cells | Jpn. J. Appl. Phys. 54, 08KD18_1-5 (2015) | Hyunju Lee | Keigo Ueda, Yuya Enomoto, Koji Arafune, Haruhiko Yoshida, Shin-ichi Satoh, Toyohiro Chikyow, and Atsushi Ogura | IOP Science | ||
| 2015年7月 | Relationship between passivation properties and band alignment in O3-based atomic-layer-deposited AlOx on crystalline Si for photovoltaic applications | Jpn. J. Appl. Phys. 54, 08KD14_1-4 (2015) | Norihiro Ikeno | Yoshihiro Yamashita, Hiroshi Oji, Shohei Miki, Koji Arafune, Haruhiko Yoshida, Shin-ichi Satoh, Ichiro Hirosawa, Toyohiro Chikyow, and Atsushi Ogura | IOP Science | ||
| 2015年7月 | Passivation properties of aluminum oxide films deposited by mist
chemical vapor deposition for solar cell applications |
Jpn. J. Appl. Phys. 54, 08KD25_1-5 (2015) | Shohei Miki | Koji Iguchi, Sho Kitano, Koki Hayakashi, Yasushi Hotta, Haruhiko Yoshida, Atsushi Ogura, Shin-ichi Satoh, and Koji Arafune | IOP Science | ||
| 2015年8月 | Influence of Al2O3 layer insertion on the electrical properties
of Ga-In-Zn-O thin-film transistors |
Journal of Vacuum Science & Technology A, 33, 061506 (2015); | Kazunori Kurishima | Toshihide Nabatame, Maki Shimizu, Nobuhiko Mitoma, Takio Kizu, Shinya Aikawa, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow, and Atsushi Ogura | AVS | ||
| 2015年8月 | Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition | Thin Solid Films, 591(Part A):105-110 (2015). | Takahiro Nagata | Kazuyoshi Kobashi, Yoshiyuki Yamashita, Hideki Yoshikawa, Chinnamuthu Paulsamy, Yoshihisa Suzuki, Toshihide Nabatame, Atsushi Ogura,· Toyohiro Chikyow | Elsevier B.V. | ||
| 2015年10月 | Biaxial Stress Evaluation in SiGe Epitaxially Grown on Ge
Substrate by oil-immersion Raman Spectroscopy |
ECS Transactions, 69, 81-87 (2015) | K. Takeuchi | D. Kosemura, S. Yamamoto, M. Tomita, K. Usuda, N. Sawamoto, and A. Ogura | Electrochemical Society | ||