国際会議 10〜11年 | 2013/6/24 更新 | |||||
発行年月 | タイトル | 第一著者 | 共著者 | 会議名 | 開催場所 | 備考 |
2010年4月5日 | Chemical Vapor Deposition of Ge2Sb2Te5 Thin Film for Phase Change Memory | Seiti Hamada | Takafumi Horiike, Masato Ishikawa, Hideaki Machida, Atsushi Ogura, Yoshio Ohshita and Takayuki Ohba | 2010 Materials Research Society Spring Meeting | San Francisco | |
2010年4月26日 | Cross-sectional UV-Raman measurement for two-dimensional channel-stress profile in extremely high-performance pMOSFET |
H. Akamatsu | M. Takei, D. Kosemura, K. Nagata, S. Mayuzumi, S. Yamakawa, H. Wakabayashi, A. Ogura | 217th Electrochemical Society Meeting | Vancouver | |
2010年4月26日 | Suppression mechanism of volume shrinkage for SOG film by plasma treatment | K. Nagata | D. Kosemura, M. Takei, H. Akamatsu, M. Hattori, T. Koganezawa, M. Machida, J. Son, I. Hiro-sawa, T.Nishita, T. Shiozawa, D. Katayama, Y. Sato, Y. Hirota and A. Ogura | 217th Electrochemical Society Meeting | Vancouver | |
2010年1月14日 | Material Exploration of ZrO2-Based Dielectric Thin Films for DRAM Capacitors by Composition-Spread Film Method” | Yuji Kiyota | Kenji Itaka, Yuta Iwashita, Tetsuya Adachi, Toyohiro Chikyow, Atsushi Ogura | The 4th Global COE International Symposium on “Practical Chemical Wisdom”〜 Joint Symposium with MANA, NIMS 〜Advanced Materials Design at ano- and Mesoscales toward Practical Chemical Wisdom | Tokyo | |
2010年4月6日 | Chemical Vapor Deposition of Ge2Sb2Te5 Thin Film for Phase Change Memory | Seiti Hamada | Takafumi Horiike, Masato Ishikawa, Hideaki Machida, Atsushi Ogura, Yoshio Ohshita and Takayuki Ohba | Materials Research Society 2010 Spring Meeting | San Franbsisco | |
2010年4月26日 | Suppression mechanism of volume shrinkage for SOG film by plasma treatment | K. Nagata | D. Kosemura, M. Takei, H. Akamatsu, M. Hattori, T. Koganezawa, M. Machida, J. Son, I. Hirosawa, T. Nishita, T. Shiozawa, D. Katayama, Y. Sato, Y. Hirotac and A. Oguraa | 217th Electrochemical Society Meeting | Vancouver, Canada | |
2010年4月26日 | Cross-sectional UV-Raman measurement for obtaining
two-dimensional channelstress profile in extremely high-performance pMOSFETs |
H. Akamatsu | M. Takei, D. Kosemura, K. Nagata, S. Mayuzumi, S. Yamakawa, H. Wakabayashi, A. Ogura | 217th Electrochemical Society Meeting | Vancouver, Canada | |
2010年6月5日 | Evaluation of Strained Silicon by electron back scattering
pattern compared with Raman measurement and edge force model calculation |
M. Tomita | D. Kosemura, M. Takei, K. Nagata, H. Akamatsu and A. Ogura | International Symposium on Technology Evolution for Silicon Nano-Electronics | Tokyo, Japan | |
2010年6月3日 | Channel strain analysis in high-performance MOSFET by Raman spectroscopy with water-immersion objective lens | Munehisa Takei | Daisuke Kosemura, Kohki Nagata, Hiroaki Akamatsu and Atsushi Ogura | International Symposium on Technology Evolution for Silicon Nano-Electronics | Tokyo, Japan | |
2010年6月3日 | Excitation of forbidden phonon modes in Si using a high-NA oil-immersion lens for anisotropic biaxial stress analysis | D. Kosemura | M. Takei, K. Nagata, H. Akamatsu, M. Hattori, M. Tomita, and A. Ogura | International Symposium on Technology Evolution for Silicon Nano-Electronics | Tokyo, Japan | |
2010年6月7日 | Quantitative analysis of impurities in solar-grade Si by photoluminescence spectroscopy around 20 K | Takaaki Iwai | Michio Tajima, Atsushi Ogura | E-MRS 2010 Spring Meeting | Strasbourg, France |
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2010年6月13日 | Low Resistive ALD TiN Metal Gate using TDMAT Precursor for High Performance MOSFET | T. Hayashida | K. Endo, Y. X. Liu, T. Matsukawa, S. Ouchi, K. Sakamoto, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, and M. Masahara | The 2010 Silicon Nanoelectronics Workshop | Hawaii | |
2010年6月18日 | On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs | Y. Liu | K. Endo, S. Ouchi, T. Kamei*, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida*, K. Sakamoto, T. Matsukawa, A. Ogura*, M. Masahara | 2010 Symposium on VLSI Technology | Hawaii | |
2010年6月25日 | Behavior of nickel silicide in multi-crystalline silicon for solar cells | Tomihisa Tachibana | Takashi Samejima, Koji Arafune, Yoshio Ohshita, and Atsushi Ogura | Asia-Pasific Conference on Semiconducting Silicides and Rekated Science and Technology Towards Sustainable Optelectronics | Tsuskkuba, Japan | |
2010年8月2日 | Effects of High Temperature Annealing on Minority Carrier Recombination Properties in Multi-crystalline Silicon for Solar Cells | Takashi Sameshima | Tomihisa Tachibana, Yoshio Ohshita, Koji Arafune, and Atsushi Ogura | 20th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes | Breckenridge, CO | |
2010年8月3日 | Light Elements Mapping in Cast-grown Multicrystalline Silicon | Takahide Ishizuka | Atsushi Ogura,Koji Arafune,Yoshio Ohshita,Haruhiko Ono |
20th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes | Breckenridge, CO | |
2010年8月12日 | Stress Tensor Measurement by Raman Spectroscopy with High-Numerical-Aperture Immersion Lens | D. Kosemura | A. Ogura | 22th International Conference on Raman Spectroscopy | Boston | |
2010年8月12日 | Evaluation of heavily doped poly-Si thin films recrystallized by excimer laser annealing using UV/visible Raman spectroscopy | Takashi Kubo | Daisuke Kosemura, Atsushi Ogura, Takashi Noguchi, Toshiharu
Suzuk |
22th International Conference on Raman Spectroscopy | Boston | |
2010年8月24日 | Ion beam irradiation to poly(L-lactide-co-ε-caprolactone) copolymer film for biocompatibility control | Daisuke Mano | Shinya Morisaki, Atsushi Ogura, Toshiyui Tanaka, Kyoichiro Mizutani, Hitoshi Sakuragi, Yoshiaki Suzuki, and Hiroshi Ujiie | 17th Inetrnational Conference on ion beam modification of materials | Montreal, Acanada | |
2010年8月24日 | Ion Beam Modification of PTFE Fiber and Polyester Fiber for Three-Dimensional Scaffold |
Shinya Morisaki | Daisuke Mano, Atsushi Ogura, Toshiyuki Tanaka, Kyouichirou
Mizutani, Yoshiaki Suzuki, and Kazushi Sakuragi |
17th Inetrnational Conference on ion beam modification of materials | Montreal, Acanada | |
2010年9月23日 | Material Research on High Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells | T. Tachibana | T. Sameshima, Y. Iwashita, Y. Kiyota, T. Chikyow, H. Yoshida, K.
Arafune, S. Satoh and A. Ogura |
2010 International Conference on Solid State Devices and Materials | Tokyo, Japan | |
2010年9月23日 | Strain and stress tensor evaluation in global and local strained-Si by electron back scattering pattern | Motohiro Tomita | Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu
and Atsushi Ogura |
2010 International Conference on Solid State Devices and Materials | Tokyo, Japan | |
2010年9月24日 | Quantitative Analysis of Stress Relaxation in TEM specimen fabrication by Raman Spectroscopy with High-NA Oil-Immersion Lens | Daisuke Kosemura | Atsushi Ogura | 2010 International Conference on Solid State Devices and Materials | Tokyo, Japan | |
2010年9月24日 | Experimental Study of PVD-TiN Gate with Poly-Si Capping and Its Application to 20 nm FinFET Fabrication | T. Kamei | Y. X. Liu, K. Endo, S. O’uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, T. Matsukawa, K. Sakamoto, A. Ogura, and M. Masahara | 2010 International Conference on Solid State Devices and Materials | Tokyo, Japan | |
2010年10月11日 | Fixed Charge Control in the Passivation Films using Binary Oxide
Dielectrics for Crystalline Silicon Solar Cell |
T. Tachibana | T. Sameshima, Y. Iwashita, Y. Kiyota, T. Chikyow, H. Yoshida, K. Arafune, S. Satoh and A. Ogura | 218th Electrochemical Society Meeting | Las Vegas | |
2010年10月12日 | Combinatorial investigation of ZrO2-based dielectric materials for DRAM capacitors | Y. Kiyota | Y. Iwashita, K.Itaka, T.Adachi, T. Chikyow and A. Ogura | 218th Electrochemical Society Meeting | Las Vegas | |
2010年11月15日 | Influence of high temperature annealing on electrical activity at small angle grain boundaries in multi-crystalline silicon for solar cells | Tomihisa Tachibana | Takashi Sameshima, Yoshio Ohshita, Koji Arafune and Atsushi Ogura | The Forum on the Science and Technology of Silicon Materials 2010 | Okayama, Japan | |
2010年11月15日 | Deep-Level Photoluminescence Analysis at Room Temperature in Small-Angle Grain Boundaries in Multicrystalline Silicon | Futoshi Okayama | Yasuaki Iwata, Michio Tajima, Yoshio Ohshita and Atushi Ogura | The Forum on the Science and Technology of Silicon Materials 2010 | Okayama, Japan | |
2010年11月15日 | Photoluminescence analysis of high concentrations of donor and acceptor impurities in Si | Takaaki Iwai | Michio Tajima, Atsushi Ogura | The Forum on the Science and Technology of Silicon Materials 2010 | Okayama, Japan | |
2010年11月15日 | Improvement of spatial resolution in Raman spectroscopy by controlling measurement area | Munehisa Takei | Daisuke Kosemura, Kohki Nagata, Hiroaki Akamatsu, and Atsushi Ogura | The Forum on the Science and Technology of Silicon Materials 2010 | Okayama, Japan | |
2010年11月12日 | Combinatorial Investigation of ZrO2-Based Dielectric Materials for DRAM Capacitors |
Y. Kiyota | Y. Iwashita, K. Itaka, T. Adachi, T. Chikyow and A. Ogura | 23rd International Microprocesses and Nanotechnology Conference | Fukuoka, Japan | |
2011年5月10日 | Structural analysis of atomically flat SiO2/Si interface using
CTR scattering around the 110 forbidden reflection |
K. Nagata | M. Hattori, D. Kosemura, M. Takei, A. Ogura, T. Koganezawa, I. Hirosawa, T. Suwa, A. Teramoto, T. Hattori, and T. Ohmi | Euro MRS 2011Spring Meeting | Nice, France | |
2011年5月12日 | Evaluation of quantum confinement effect in nanocrystal Si dot layer by Raman spectroscopy | Y. Mizukami | D. Kosemura , Y. Numasawa , Y. Ohshita , and A. Ogura | Euro MRS 2011Spring Meeting | Nice, France | |
2011年8月2日 | Influences of Fe and Ni Contaminations on Electrical
Activities at Crystalline Defects in Multi-crystalline Silicon Substrates |
Yuki Tsuchiya | Naoto Miyazaki, Takashi Sameshima, Tomihisa Tachibana, Yoshio
Ohshita, Koji Arafune, and Atsushi Ogura |
21st Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes | Breckenridge, CO | |
2011年8月2日 | Evaluation of Lightelement Distributions in Multicrystalline
Silicon for Solar Cells |
Hiroki Kusunoki | Takahide Ishizuka, Atsushi Ogura, and Haruhiko Ono |
21st Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes | Breckenridge, CO | |
2011年9月6日 | Evaluation of crystalline defects in silicon ingots fabricated by seeding cast growth | T. Tachibana | T. Sameshima, N. Miyazaki, T. Kojima, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita, and A. Ogura | 26th European Photovoltaic Solar Energy Conference and Exhibition | Hamburg, Germany | |
2011年9月26日 | High-speed Deep-level Luminescence Imaging in Multicrystalline Si Solar Cells | F. Okayama | M. Tajima, H. Toyota and A. Ogura | 41st European Solid-State Device Research Conference | Helsinki, Finland | |
2011年9月26日 | Combinatorial Synthesis Study of Passivation Layers for
Crystalline Si Photovoltaics |
N. Ikeno | T. Tachibana, H. Lee, H. Yoshida, K. Arafune, S. Satoh, T. Chikyow and A.Ogura | 14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors | Miyazaki, Japan | |
2011年9月26日 | Evaluation of Silicon Substrate Fabricated by Seeding Cast Technique | T. Tachibana1 | T. Sameshima, T. Kojima, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita and A. Ogura | 14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors | Miyazaki, Japan | |
2011年9月26日 | Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction | Y. Mizukami | D. Kosemura, Y. Numasawa, Y. Ohshita and A. Ogura | 14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors | Miyazaki, Japan | |
2011年9月26日 | Evaluation of GexSbyTez Film Structure Fabricated by Chemical Vapor Deposition | S. Hamada | T. Horiike, T. Uno, M. Ishikawa, H. Machida, Y. Ohshita and A. Ogura | 14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors | Miyazaki, Japan | |
2011年9月26日 | EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells | T. Sameshima | N. Miyazaki, Y. Tsuchiya, T. Tachibana, Y. Ohshita, K. Arafune and A. Ogura | 14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors | Miyazaki, Japan | |
2011年9月28日 | Impacts of Interfacial Strain on Crystal-Truncation-Rod (CTR) Scattering around 110 Forbidden Reflections | K.Nagata | D.Kosemura, M.Takei, A.Ogura, T.Koganezawa, I.Hirosawa, T. Suwa, A. Teramoto, T. Hattori and T. Ohmi | 14th International Conference on Defects ‐ Recognition, Imaging and Physics in Semiconductors | Miyazaki, Japan | |
2011年9月29日 | Direct Comparison of Electrical Charateristics for Double-Gate
and Tri-Gate Flash Memories |
Y. X. Liu | T. Kamei, T. Matsukawa, K. Endo, S. Ouchi, J. Tsukada, H. Yamauchi, Y. Ishikawa,T. Hayashida, K. Sakamoto,A. Ogura, M. Masahara | 2011 International Conference on Solid State Devices and Materials | Nagiya, Japan | |
2011年9月29日 | Atomic Layer Deposited Aluminum Oxide Passivation Layers for
Crystalline Silicon: Effects of Deposition Temperature on Film and Interface Structures |
H. Lee | N. Sawamoto, T. Tachibana, N. Ikeno, K. Arafune, H. Yoshida, S. Satoh, K. Matsumoto, K. Takahashi, T. Chikyow, A. Ogura | 2011 International Conference on Solid State Devices and Materials | Nagiya, Japan | |
2011年9月29日 | Surface Recombination of Crystalline Silicon Substrates
Passivated by Atomic Layer Deposited AlOx |
K.Arafune | S.Miki, R.Matsutani, J.Hamano, H.Yoshida, T.Tachibana, A.Ogura, K.Matsumoto, K.Takahashi, Y.Ohshita, S.Satoh | 2011 International Conference on Solid State Devices and Materials | Nagiya, Japan | |
2011年9月30日 | Evaluation of Anisotropic Strain Relaxation in SSOI Nanostructure by Oil-Immersion Raman Spectroscopy | D. Kosemura | M. Tomita, K. Usuda, A. Ogura | 2011 International Conference on Solid State Devices and Materials | Nagiya, Japan | |
2011年9月30日 | Channel strain measurements in 32nm-node CMOSFETs | M. Takei | H. Hashiguchi, T. Yamaguchi, D. Kosemura, K. Nagata, A. Ogura | 2011 International Conference on Solid State Devices and Materials | Nagiya, Japan | |
2011年9月30日 | Performance and Variability Comparisons between ALD- and PVD-TiN Gate FinFET | T. Hayashida, | K. Endo, Y. X. Liu, S. O'uchi, T. Matsukawa, W. Mizubayashi, S. Migita, Y. Morita, H. Ota, H. Hashiguchi, D. Kosemura, T. Kamei, J. Tsukada, H. Yamauchi, A. Ogura, M. Masahara | 2011 International Conference on Solid State Devices and Materials | Nagiya, Japan | |
2011年9月30日 | Impact of light element impurities on crystalline defect generation in silicon substrate | T. Tachibana | T. Sameshima, T. Kojima, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita, A. Ogura | 2011 International Conference on Solid State Devices and Materials | Nagiya, Japan | |
2011年10月3日 | Influence of Fin Height on Poly-Si/PVD-TiN Stacked Gate FinFET Performance | T. Hayashida | K. Endo, Y. X. Liu, S. O’uchi, T. Matsukawa, H. Hashiguchi, D. Kosemura, T. Kamei, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, and M. Masahara | 2011 IEEE International SOI Conference | Arizona, AZ | |
2011年10月4日 | Comparative Study of Tri-gate Flash Memories with Split and Stack Gates | T. Kamei, | Y. X. Liu, T. Matsukawa, K. Endo, S. O’uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A. Ogura, and M. Masahara | 2011 IEEE International SOI Conference | Arizona, AZ | |
2011年10月10日 | Evaluation of Al2O3 films for MANOS memory device with oxygen infusion by gas cluster ion beam | K. Nagata | H. Hashiguchi, T. Yamaguchi, A. Ogura, H. Oji, J. Son, I. Hirosawa, Y. Tanaka, Y. Hirota, J. Gumpher, K. Yamashita | 220th ECS Meeting and Electrochemical Energy Summit | Boston, MA | |
2011年10月11日 | Evaluation of SiO2 film properties fabricated by plasma oxidation | T. Yamaguchi | K. Nagata, A. Ogura, T. Koganezawa, I. Hirosawa, Y.Kabe, Y. Sato, S. Ishizuka and Y. Hirota | 221st ECS Meeting and Electrochemical Energy Summit | Boston, MA | |
2011年10月11日 | Effect of plasma treatment on stress reduction induced by
shallow trench isolation filled with spin-on-glass dielectric |
H. Hashiguchi | K. Nagata, T. Sameshima, Y. Mizukami, A. Ogura, T. Kuroda, Y. Sato, S. Ishizuka, and Y. Hirota | 222nd ECS Meeting and Electrochemical Energy Summit | Boston, MA | |
2011年10月12日 | Impacts of Metal Impurities on Recombination Properties at Small Angle Grain Boundaries in Multicrystalline Silicon for Solar Cells | T. Sameshima | Y. Tsuchiya, N. Miyazaki, T. Tachibana, Y. Ohshita, K. Arafune, and A. Ogura | 223rd ECS Meeting and Electrochemical Energy Summit | Boston, MA | |
2011年10月26日 | Tri-gate Flash Memory with Improved IPD Layer | T. Kamei | Y.X. Liu , T. Matsukawa , K. Endo , S.O'uchi , J. Tsukada , H. Yamauchi , Y. Ishikawa , T. Hayashida , K. Sakamoto , A. Ogura and M. Masahara | 24th International Microprocesses and Nanotechnology Conference |
Kyoto, Japan | |
2011年10月26日 | Demonstration of ALD-TiN Gate FinFET with TDMAT Precursor for WFV Reduction | T. Hayashida | K. Endo 3, Y.X. Liu 3, S. O'uchi 3, T. Matsukawa 3, W. Mizubayashi 3, S. Migita 3, Y. Morita 3, H. Ota 3, H. Hashiguchi 1, D. Kosemura, T. Kamei, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, and M. Masahara |
24th International Microprocesses and Nanotechnology Conference |
Kyoto, Japan | |
2011年10月26日 | Fabrication and Characterization of Floating-Gate Type MOS Capacitors with Nanoscale Triangular Cross-Section Tunnel Areas |
Y.X. Liu | R.F. Guo 1, T. Kamei 2, T. Matsukawa K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A. Ogura , and M. Masahara |
24th International Microprocesses and Nanotechnology Conference |
Kyoto, Japan | |
2011年11月1日 | Composition control of GexSbyTez film for PCRAM application by
chemical vapor deposition |
Takafumi Horiike | Seiti Hamada, Tomohiro Uno, Hideaki Machida, Masato Ishikawa,
Hiroshi Sudo, Yoshio Ohshita, and Atsushi Ogura |
11th Non-Volatile Memory Technology Symposium | Shanghai. China | |
2011年10月26日 | Demonstration of ALD-TiN Gate FinFET with TDMAT Precursor for WFV Reduction | T. Hayashida | K. Endo 3, Y.X. Liu 3, S. O'uchi 3, T. Matsukawa 3, W. Mizubayashi 3, S. Migita 3, Y. Morita 3, H. Ota 3, H. Hashiguchi 1, D. Kosemura, T. Kamei, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura and M. Masahara |
24th International Microprocesses and Nanotechnology Conference | Kyoto, Japan | |
2011年10月26日 | Tri-gate Flash Memory with Improved IPD Layer | T. Kamei | Y.X. Liu 2, T. Matsukawa 2, K. Endo S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A Ogura and M. Masahara |
24th International Microprocesses and Nanotechnology Conference | Kyoto, Japan | |
2011年10月27日 | Fabrication and Characterization of Floating-gate Type MOS Capacitors with Nanoscale | Y.X. Liu | R.F. Guo 1, T. Kamei 2, T. Matsukawa K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A. Ogura and M. Masahara |
24th International Microprocesses and Nanotechnology Conference | Kyoto, Japan | |
2011年11月1日 | Combinatorial Investigation of Passivation Layers for Crystalline Si Photovoltaics | Norihiro Ikeno | Tomihisa Tachibana,
Hyunju Lee, Takahiro Nagata, Kazuyoshi Kobashi, Atsushi Ogura and
Toyohiro Chikyow |
The 3rd NIMS(MANA)- Waseda International Symposium | Tokyo, Japan | |
2011年11月18日 | Verification of GeSbTe composition in the high aspect
hole filled by Chemical Vapor Deposition |
Hideaki Machida | Takafumi Horiike, Seiti Hamada, Tomohiro Uno, Naomi Sawamoto, Kohei Suda, Masato Ishikawa, Hiroshi Sudo, Yoshio Ohshita, and Atsushi Ogura | The 23rd Symposium on Phase Change Optical information Storage | Atami, Japan | |
2011年12月29日 | Characterization of Light Element Precipitates in Large Grain Multicrystalline Silicon | J. Li | T. Sekiguchi, H. Harada, Y. Miyamura, K. Kakimoto, T. Kojima, Y. Ohshita, T. Tachibana and A. Ogura | 21st International Photovoltaic Science and Engineering Conference | Fukuoka, Japan | |
2011年11月29日 | Gettering Effect on Recombination Properties at Intra-Grain Deffects in Multicrystalline Silicon | T. Sameshima | N. Miyazaki1, Y. Tsuchiya, T. Tachibana, Y. Ohshita, K. Arafune and A. Ogura | 21st International Photovoltaic Science and Engineering Conference | Fukuoka, Japan | |
2011年11月29日 | Study of Crstalline Deffect Generation Caused by Light Element Impurities in Silicon Substrate | T. Tachibana | T. Sameshima1, T. Kojima2, K. Arafune, K. Kakimoto, Y. Miyamura, H. Harada, T. Sekiguchi, Y. Ohshita and A. Ogura |
21st International Photovoltaic Science and Engineering Conference | Fukuoka, Japan | |
2011年11月29日 | Groeth and Characterization of Large Grain Multicrsytalline Silicon | Y. Miyamura | K. Jiptner, H. Harada, M. Fukuzawa, K. Kakimoto, T. Kojima, Y. Ohsita, T. Tachibana, A. Ogura and T. Sekiguchi | 21st International Photovoltaic Science and Engineering Conference | Fukuoka, Japan | |
2011年11月30日 | O3-Based ALD Processed Aluminum Oxide Passivation Film for c-Silicon | H. Lee | T. Tachibana, N. Ikeno, H. Hashiguchi, K. Matsumoto, K. Takahashi, T. Chikyow and A. Ogura | 21st International Photovoltaic Science and Engineering Conference | Fukuoka, Japan | |
2011年12月1日 | Evaluation of Antireflection Coating Consists of Double Layer a-SiNx:H Coating with Diffrent Refractive Indexes | M. Monden | S. Miki, H. Yoshida, A. Ogura, S. Satoh and K. Arafune | 21st International Photovoltaic Science and Engineering Conference | Fukuoka, Japan | |
2011年12月1日 | Investigation of Zirconium Oxide Based Passivation Layer for Crystalline Silicon Solar Cells | N. Ikeno | T. Tachibana, H. Lee, T. Nagata, K. Kobashi, H. Yoshida, K. Arafune, S. Satoh, T. Chikyow and A. Ogura | 21st International Photovoltaic Science and Engineering Conference | Fukuoka, Japan |