国際会議 08〜09年 | 2011/4/11 更新 | |||||
発行年月 | タイトル | 第一著者 | 共著者 | 会議名 | 開催場所 | 備考 |
2008年1月 | Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate |
T. Yoshida | D. Kosemura, Y. Kakemura, M. Takei, H. Saito, A. Ogura, T. Shimura, T. Koganesawa, and I. Hirosawa | Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits |
Ireland | |
2008年5月 | Evaluation of local strain in Si using UV-Raman spectroscopy | A. Ogura | D. Kosemura, Y. Kakemura, T. Yoshida, | Euro-MRS 2008, Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications, | France | Inveited |
2008年5月 | Evaluation and control of strain in Si induced by patterned SiN stressor | H. Saitoh | M. Takei, A. Ogura, T. Koganezawa, I. Hirosawa, M. Kohno, T. Nishita, and T. Nakanish | 213th Electrochemical Society Meeting | Phoenix | |
2008年5月 | Chemical Vapor deposition using Pt(PF3)4 and Ni(PF3)4 | M. Ishikawa | I. Muramoto, H. Machida, S. Imai, A. Ogura, and Y. Ohshita | 213th Electrochemical Society Meeting | Phoenix | |
2008年5月 | Application of Synchrotron X-ray Diffraction | T. Shimura, | T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura, O. Sakata, S. Kimura, H. Edo, S. Iida, and H. Watanabe | 213th Electrochemical Society Meeting | Phoenix | |
2008年5月 | Transconductance Enhancement by Utilizing Pattern Dependent Oxidation in Silicon Nanowire Field-Effect Transistors | A. Seike | T. Tange, I. Sano, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura and I. Ohdomari | 213th Electrochemical Society Meeting | Phoenix | |
2008年6月 | Channel-Stress Study on Gate-Size Effects for Damascene-Gate pMOSFETs with Top-Cut Compressive Stress Liner and eSiGe | S. Mayuzumi | S. Yamakawa, D. Kosemura, M. Takei, J. Wang, T. Ando, Y. Tateshita, M. Tsukamoto, H. Wakabayashi, T. Ohno, A. Ogura and N. Nagashima | 2008 Symposium on VLSI Technology and circuit | Hawaii | |
2008年8月 | Evaluation of multi-crystalline silicon substrates with p-n diode array | T. Tachibana | K. Imai, J. Masuda, A. Ogura, K. Arafune, Y. Ohshita, and M. Tajima | 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes | Denver | |
2008年8月 | High Spatial Resolution Evaluation of Strain in High-Performance Si MOSFET by UV-Raman Spectroscopy | D. Kosemura | M.Takei, T. Yoshida, Y. Kakemura, A. Ogura, R. Shimidzu | 21th International Conference on Raman Spectroscopy | London | Guraduate Student Award |
2008年9月 | Study of Stress Effect on Replacement Gate Technology with Compressive Stress Liner and eSiGe for pFETs | S. Yamakawa, | S. Mayuzumi, D. Kosemura, M. Takei, J. Wang, Y. Tateshita, H. Wakabayashi, T. Ohno, A.Ogura, and H. Ansai | 2008 International Conference on Simulation of Semiconductor Processes and Devices | Hakone | |
2008年10月 | Study on Stress Memorization by Argon Implantation and Annealing | M. Hino | K. Nagata, T. Yoshida, D. Kosemura, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ogura, T. Hattori and H. Iwai | 214th Electrochemical Society Meeting | Hawaii | |
2008年10月 | Transconductance Enhancement of Strained <110> and <100> Si Nanowire Channel Field-Effect Transistors | I. Tsuchida | A. Seike, Y. Sugiura, D. Kosemura, A. Ogura and I. Ohdomari | 214th Electrochemical Society Meeting | Hawaii | |
2008年10月 | Application of Synchrotron X-ray Diffraction Methods to Gate Stacks of Advanced MOS devices | T. Shimura | T. Inoue, Y. Okamoto, T. Hosoi, H. Edo, S. Iida, A. Ogura, and H. Watanabe | 214th Electrochemical Society Meeting | Hawaii | |
2008年10月 | Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography | T. Shimura | T. Inoue, Y. Okamoto, T. Hosoi, H. Edo, S. Iida, A. Ogura, and H. Watanabe | 214th Electrochemical Society Meeting | Hawaii | |
2008年10月 | Relationship between grain boundary structures and electrical property in polycrystalline Si for solar cells | Koji Fukuda | Hideaki Kawai, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, and Atushi Ogura | Renewable Energy 2008 | Pusan | |
2008年10月 | New Analysis of Heavily Doped Boron and Arsenic in Shallow Junctions by X-ray Photoelectron Spectroscopy | K. Tsutsui, | M. Watanabe, Y. Nakagawa, T. Matsuda, T. Yoshida, E. Ikenaga, K. Kakushima, P. Ahmet, H. Nohira,T. Maruizumi, A. Ogura, T. Hattori and H. Iwai | ESSDERC2008 | Great Britain | |
2008年11月 | A Comparative Study of the Electrical Characteristics of Sputtered TiN Gate Planar MOSFETs and FinFETs | T. Hayashida | Y. X. Liu, T. Matsukawa, K. Endo, S. O’uchi, K. Sakamoto, K. Ishii, J. Tsukada, Y. Ishikawa, H. Yamauchi, E. Suzuki, A. Ogura, and M. Masahara | 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology | Tokyo | |
2008年11月 | Evaluation of Transconductance Enhancement of <110> and <100> -Channel Strained Si Nanowire Field-Effect Transistors" | A. Seike | Ikushin Tsuchida, Daisuke Kosemura, Atsushi Ogura, Takanobu Watanabe, and Iwao Ohdomari | 2008 International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology | Tokyo | |
2008年11月 | Study of Strain Introduction in the Channel of MOSFET with Transparent Dummy Gate and SiN Stressor | Daisuke Kosemura | Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Masayuki Kohno, Tatsuo Nishita, Toshio Nakanishi, and Atsushi Ogura | The 5th International Conference on Advanced Science and Technology of Silicon Materials | Hawaii | |
2008年11月 | Micro-Raman study of channel strain in high performance pFETs with compressive stress liner and eSiGe using damascene gate technology | M.Takei | D. Kosemura, S. Mayuzumi, A. Ogura | The 5th International Conference on Advanced Science and Technology of Silicon Materials | Hawaii | |
2008年11月 | Evaluation of plasma etching damage in Si surface by UV-Raman spectroscopy | Hirotaka Kurozaki | Daisuke Kosemura,Tetsuya Yoshida,Maki Hattori, Eiichi Nishimura, and Atsushi Ogura | The 5th International Conference on Advanced Science and Technology of Silicon Materials | Hawaii | |
2008年11月 | The in-situ measurement of thermal expansion coefficient of thin SiGe layer on Si (001) by XRD | Hirokazu Kambayashi | Yu Yamamoto Masato Imai, Yoshiji Miyamura, Kazuhiko Omote, Takane Kobayashi, Atsushi Ogura | The 5th International Conference on Advanced Science and Technology of Silicon Materials | Hawaii | |
2008年11月 | Behaviors of ultra thin SiGe layer by annealing | Yu Yamamoto | Hirokazu Kambayashi, Masato Imai, Yoshiji Miyamura, Kazuhiko Omote, Takane Kobayashi, Atsushi Ogura | The 5th International Conference on Advanced Science and Technology of Silicon Materials | Hawaii | |
2008年11月 | Suppression of SiC Surface Roughening during High Temperature Annealing by Atmospheric Control | S. Kinoshita | A. Ogura | The 5th International Conference on Advanced Science and Technology of Silicon Materials | Hawaii | |
2008年11月 | Investigation of Structural Defects in Strained Si Wafers by Synchrotron X-ray Topography | Takayoshi Shimura | Tomoyuki Inoue, Takuji Hosoi, Atsushi Ogura, Satoshi Iida, Masataka Umeno, and Heiji Watanabe | The 5th International Conference on Advanced Science and Technology of Silicon Materials | Hawaii | |
2009年5月 | Ion Beam Irradiation to Type IV Collagen for Biologic Reactivity | Yuichiro Shiga | Atsushi Ogura, Hiroshi Toida, Rena Ujiie, and Yoshiaki Suzuki | The IUMRS International Conference in Asia 2008 | Aaichi | |
2009年5月 | UV-Raman spectroscopy study on SiO2/Si interface | M. Hattori | T. Yoshida, D. Kosemura A. Ogura, T. Suwab A. Teramotob T. Hattorib and T. Ohmi | 215th Electrochemical Society Meeting | San Francisco | |
2009年5月 | Improvement of CVD SiO2 by post deposition microwave plasma treatment | K. Nagata | H. Akamatsu, D. Kosemura, T. Yoshida, M. Takei, M. Hattori, A. Ogura, T. Koganezawa, M. Machida, J. Son, I. Hirosawa, T. Siozawa, D. Katayama, Y. Sato and Y. Hirota | 215th Electrochemical Society Meeting | San Francisco | |
2009年8月 | Detail analysis of Σ9 grain boundaries in multi-crystalline silicon substrates for solar cell | Junichi Masuda | Tomihisa Tachibana, Yoshio Ohshita, Koji Arafune, and Atsushi Ogura | 19th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes | Vail, Co | |
2009年8月 | Recombination velocities at grain boundaries in polycrystalline silicon | Yoshio Ohshita | Takuto Kubo, Tmonmihisa Tachinbana, Atsushi Ogura, and Masafumi Yamaguchi | 19th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes | Vail, Co | |
2009年8月 | Photoluminescence analysis of impurity precipitation on small angle grain boundaries in multi-crystalline Silicon | M. Tajima | Y. Iwata, M. Ikebe, I. Yamabe, Y. Phshita and A. Ogura | 20th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes | Vail, Co | |
2009年9月 | Evaluation of Strain and Crystal Quality in Si during Shallow Trench Isolation Process Using UV-Raman Spectroscopy | Daisuke Kosemura | Yoshida Tetsuya1; Maki Hattori1; Toshikazu Mizukoshi2; Atsushi Ogura | 13th International Conference on Defects--Recognition, Imaging and Physics in Semiconductors | Wheering, West Virginia | |
2009年9月 | Evaluation of multi-crystalline silicon substrates for solar cells by Raman spectroscopy | Michio Tajima | Masatoshi Ikebe, Yoshio Ohshita, Atsushi Ogura | 13th International Conference on Defects —Recognition, Imaging and Physics in Semiconductors (DRIP XIII) | Wheering, West Virginia | |
2009年9月 | Observation of Two-Dimensional Distribution of Lattice Inclination and Strain in Strained Si Wafers by Synchrotron X-Ray Topography | Takayoshi Shimura | Tomoyuki Inoue; Daisuke Shimokawa; Takuji Hosoi; Heiji Watanabe; Atsushi Ogura; Masataka Umeno | 13th International Conference on Defects —Recognition, Imaging and Physics in Semiconductors (DRIP XIII) | Wheering, West Virginia | |
2009年10月 | Evaluation of Multi-crystalline Silicon Substrates for Solar Cells by Raman Spectroscopy | T. Tachibana | J. Masuda, A. Ogura, Y. Ohshita and K. Arafune | 216th Electrochemical Society Meeting | Vienna, Austria | |
2009年10月 | Electron-phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature | I. Tsuchida | A. Seike, H. Takai, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe and I. Ohdomari | 216th Electrochemical Society Meeting | Vienna, Austria | |
2009年10月 | Demonstration of Transconductance Enhancement on (110) and (100) Strained-nanowire FETs | A. Seike | H. Takai, I. Tsuchida, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe and I. Ohdomari | 216th Electrochemical Society Meeting | Vienna, Austria | |
2009年10月 | Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy | Munehisa Takei | Daisuke Kosemura, Kohki Nagata Hiroaki Akamatsu, Satoru Mayuzumi, Shinya Yamakawa, Hitoshi Wakabayash and Atsushi Ogura | 2009 International Conference on Solid State Devices and Materials (SSDM 2009) | Sendai | |
2009年10月 | HAX-PES Study of SiN Film for Charge Storage Layer in High Performance SONOS Type Flash Memory Cell | Daisuke Kosemura | Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Maki Hattori, Daisuke Katayama, Tatsuo Nishita, Toshio Nakanishi, Jin-Young Son, Tomoyuki Koganezawa, Ichiro Hirosawa, Atsushi Ogura | 2009 International Conference on Solid State Devices and Materials (SSDM 2009) | Sendai | |
2009年10月 | Evaluation of anisotropic biaxial stress using an
immersion lens by Raman analysis based on the polarization rules |
Daisuke Kosemura | M. Takei, K. Nagata, H. Akamatsu, R. Shimidzu and A. Ogura | 2009 International Conference on Solid State Devices and Materials (SSDM 2009) | Sendai | |
2009年10月 | Superiority of ALD TiN with TDMAT Precursor for Metal-Gate MOSFET | T. Hayashida | K. Endo, Y. X. Liu, T. Matsukawa, S. Ouchi, K. Sakamoto, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura and M. Masahara | 2009 International Conference on Solid State Devices and Materials (SSDM 2009) | Sendai | |
2009年10月 | Experimental investigation of electron-phonon scattering effect | I. Tsuchida | A. Seike, H. Takai, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe and I. Ohdomari | 2009 International Conference on Solid State Devices and Materials (SSDM 2009) | Sendai | |
2009年10月 | Impact of adequate selection of channel direction on (001) and (110) wafer orientation for strained nanowire transistors | A. Seike | H. Takai, I. Tsuchida, J. Masuda, D. Kosemura, A. Ogura, T. Watanabe and I. Ohdomari |
2009 International Conference on Solid State Devices and Materials (SSDM 2009) | Sendai | |
2009年10月 | GeSbTe-thin film formation by CVD for next generation memory(PCRAM: Phase Change RAM) materials | Hideaki Machida | Seichi Hamada, Takafumi Horiike, Masato Ishikawa, Atsushi Ogura,Yoshio Ohshita and Takayuki Ohba | Advanced Metallization Conference 19th Asian Session | Tokyo | |
2009年11月 | Evaluation of interfacial Layer for Restraint of Fermi Level Pinning | Y. Iwashita | T. Adachi , K. Itaka , A. Ogura and T. Chikyow | 22nd International Microprocesses and Nanotechnology Conference | Sapporo | |
2009年11月 | Channel Strain Analysis in Damascene-gate pMOSFETs on Si (100) and (110) Substrate by Conventional and Cross-sectional Raman Spectroscopy | Munehisa Takei | Daisuke Kosemura, Kohki Nagata, Hiroaki Akamatsu, Satoru Mayuzumi, Shinya Ya-makawa, Hitoshi Wakabayashi and Atsushi Ogura | 2009 Materials Research Society Fall Meeting | Boston |