国際会議 01〜03年 |
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2011/4/11 更新 |
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発行年月 |
タイトル |
第一著者 |
共著者 |
会議名 |
開催場所 |
備考 |
2001年3月 |
Gas Phase Chemical Reaction in Tantalum Nitride Low-pressure
Chemical Vapor Deposition |
Y. Ohshita |
A. Ogura, A. Hoshino, S. Hiiro, A. Tawara, and H. Machida |
Meeting of The Electrochemical Society |
Washington D.C |
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2001年4月 |
Characterization of Optical Lifetime in Silicon-on-insulator
wafers by Photoluminescence Decay Method |
S. Ibuka |
M. Tajima, and A. Ogura |
Spring Meeting of The Material research Society |
San Francisco |
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2001年4月 |
HfO2 Film Formation by Metalorganic Chemical Vapor Deposition |
A. Hoshino |
T. Suzuki, H. Machida, A. Ogura, and Y. Ohshita |
Spring Meeting of The Material research Society |
San Francisco |
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2001年7月 |
Formation of Epitaxially Ordered SiO2 in Oxygen-implanted Silicon during Thermal Annealing |
T. Shimura |
T. Hosoi, K. Fukuda, M. Umeno, and A. Ogura |
International Conference on Crystal Growth |
Kyoto |
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2001年7月 |
MOCVD precursors for Ta and Hf compound films |
H. Machida |
A. Hoshino, T. Suzuki, A. Ogura, and Y. Ohshita |
International Conference on Crystal Growth |
Kyota |
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2001年9月 |
Oxygen-Related Defects and Their Annealing Behavior in Low-Dose
Seperation-by-Implanted Oxygen (SIMOX) Wafers Studied by Slow Positron Beams |
Z.Q. Chen |
A. Uedono, A. Ogura, R. Suzuki, T. Ohdaira, and T. Mikado |
International Workshop on Slow Positron Beam Techniques for
Solids and Surfaces |
Dresden |
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2001年9月 |
Novel SOI fabrication process by light ion implantation and
annealing in oxygen including atmosphere |
A. Ogura |
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International Conference on Solid State Devices and Materials |
Tokyo |
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2001年10月 |
BOX Layer Formation by Oxygen Precipitation at Implantation
Damage of Light Ions |
A. Ogura |
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IEEE International SOI Conference |
Durango,Co |
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2001年10月 |
“HfO2 and Hf1-xSixO2 deposition by MOCVD using TDEAH |
M. Ishikawa |
H. Machida, A. Ogura, and Y. Ohshita |
Advanced Metallization Conference 2001 |
Tokyo |
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2002年9月 |
Reduction of Pattern Edge Defects in Partial SOI by LII (Light
Ion Implantation) Technique |
A. Ogura |
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International Conference on Solid State Devices and Materials |
Nagoya |
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2002年11月 |
Characterization of silicon-on-insulator wafers by monoenergetic
positron beams |
Akira Uedono |
Hidekazu Yamamoto, Akihiko Nakano, Atsushi Ogura, Toshiyuki
Ohdaira, Ryoichi Suzuki, and Tomohisa Mikado |
IEEE International SOI Conference |
Williamsburg, VA |
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2002年11月 |
Partial SOI/SON Formation by He+ Implantation and Annealing |
A. Ogura |
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IEEE International SOI Conference |
Williamsburg, VA |
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2002年8月 |
Organometallic Hf and Si precursors for Hf1-xSixO2 thin film formation –synthesis |
H. Machida |
T. Kada, M. Ishikawa, A. Ogura and Y. Ohshita |
Atomic Layer Deposition (ALD2002) Conference |
Seoul |
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2002年8月 |
Organometallic Hf and Si precursors for Hf1-xSixO2 thin film formation –characterization |
M. Ishikawa |
T. Kada, H. Machida, A. Ogura and Y. Ohshita |
Atomic Layer Deposition (ALD2002) Conference |
Seoul |
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2002年10月 |
Organometallic Hf and Si precursors for Hf1-xSixO2 thin film formation |
M. Ishikawa |
T. Kada, H. Machida, A. Ogura, and Y. Ohshita |
Advanced Metallization Conference 2002 |
Tokyo |
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2002年9月 |
Evaluation of SOI substrates by positron annihilation |
A. Ogura |
A. Uedono |
International Workshop on Positron Studies of Semiconductor
Defects |
Sendai |
invited |
2002年12月 |
SOI Formation by Light Ion Implantation and Annealing in Oxygen
Including Atmosphere |
A. Ogura |
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International Workshop on Junction Technology |
Tokyo |
invited |
2003年4月 |
Evaluation of Commercial Ultra-thin SOI Substrates using
Confocal Laser Inspection System |
A. Ogura |
O Okabayashi |
International Symposium on Silicon-on-insulator Technology and
Devices |
Paris |
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2003年9月 |
Precursors for chemical vapor deposition of NiSi |
M. Ishikawa |
T. Kada, H. Machida, Y. Ohshita and A. Ogura |
International Conference on Solid State Devices and Materials |
Tokyo |
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2003年9月 |
Body Contact structure using Eleveted Field Insulator for
Ultra-Thin Film SOI-MOSFET |
S. Yamagami |
R. Koh, H. Wakabayashi, J.-W. Lee, Y. Saito, A. Ogura, M.
Narihiko, K. Arai, H. Takemura, Y. Ochiai, K. Takeuchi and T. Mogami, |
International Conference on Solid State Devices and Materials |
Tokyo |
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2003年9月 |
Comparison of SOI Wafer Mappings between Photoluminescence
Intensity and Photoconductive Decay Lifetime |
Michio Tajima |
Zhiqiang Li, Shingo Sumie, Hidehisa Hashizume, Atsushi Ogura |
International Conference on Defects: Recognition, Imaging
and Physics of Semiconductors |
BATZ-sur-MER Furance |
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2003年9月 |
Nonuniformity of Commercial SOI Wafers Manifested by
Photoluminescence and Lifetime Mapping |
Z.Q. Li |
M. Tajima, S. Sumie, H. Hashizume and A. Ogura |
IEEE International SOI Conference |
Newport Beach , CA |
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2003年9月 |
NiSi MOCVD for FinFET and UTB-SOI |
A. Ogura |
H. Wakabayashi, M. Ishikawa, T. Kada, H. Machida and Y. Ohshita |
IEEE International SOI Conference |
Newport Beach , CA |
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2003年11月 |
SOI – current status
and trend in the future |
A. Ogura |
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The Forum on the Science and Technology of Silicon Materials 2003 |
Kanagawa |
invited |
2003年11月 |
Vacancy-type defects in SOI wafers probed by a monoenergetic
positron beam |
A. Uedono |
A. Ogura, N. Hattori, J. Kudo, and T. Nishikawa |
The Forum on the Science and Technology of Silicon Materials 2003 |
Kanagawa |
invited |
2003年10月 |
Precursors for NiSi MOCVD |
T. Kada |
M. Ishikawa, H. Machida, Y. Ohshita and A. Ogura |
Advanced Metallization Conference 2003 |
Tokyo |
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2003年12月 |
Sub-10-nm Planar-Bulk-CMOS Devices using Lateral Junction
Control |
H. Wakabayashi |
S. Yamagami, N. Ikezawa, A. Ogura, M. Narihiro, K. Arai,Y.
Ochiai, K. Takeuchi, T. Yamamoto, and T. Mogami |
Interanbtional Electron Devices Meeting, Technical Digest 989 |
WashingtonD.C |
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